34results about How to "Wide process margin" patented technology

Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode.

A method for manufacturing an epitaxial wafer includes: a step of pulling a single crystal from a boron-doped silicon melt in a chamber based on a Czochralski process; and a step of forming an epitaxial layer on a surface of a silicon wafer sliced from the single crystal. The single crystal is allowed to grow while passed through a temperature region of 800 to 600° C. in the chamber in 250 to 180 minutes during the pulling step. The grown single crystal has an oxygen concentration of 10×1017 to 12×1017 atoms / cm3 and a resistivity of 0.03 to 0.01 Ωcm. The silicon wafer is subjected to pre-annealing prior to the step of forming the epitaxial layer on the surface of the silicon wafer, for 10 minutes to 4 hours at a predetermined temperature within a temperature region of 650 to 900° C. in an inert gas atmosphere. The method is to fabricate an epitaxial wafer that has a diameter of 300 mm or more, and that attains a high IG effect, and involves few epitaxial defects.

The invention relates to a preparation method of a high-heat-resistance and high-wear-resistance polyesterimide enameled wire insulating paint, which takes 100 parts of reacted polyesterimide enameled wire insulating paint by weight with medium molecular weight as a basal body. At least the following components in parts by weight are added: 1-20 parts of amino resin, 1-20 parts of thermoplastic phenolic resin and 0.5-5 parts of siloxane. Enameled wires which are made by using the paint has the advantages that the paint film adhesiveness is excellent, the stripping and twisting K value of the enameled wires can reach more than 155 and the K value is higher than the K value (which is 110) of the existing conventional products by more than two grades; the scratch resistance is excellent and the unidirectional scratch resistance can reach more than 2000g when the wire is combined with the polyesterimide paint; the heat resistance can reach 200 while the heat resistance of the conventional polyesterimide enameled wires is 180; and the process redundancy is wide and the realization of stable process production is facilitated.

A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y<2 and Y>0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.

An Static Random Access Memory (SRAM) device and a method of operating the same. In one embodiment, the SRAM device includes: (1) an SRAM array coupled to row peripheral circuitry by a word line and coupled to column peripheral circuitry by bit lines and (2) an array low voltage control circuitry that provides an enhanced low operating voltage VESS to the SRAM array during at least a portion of an active mode thereof.

A dry cleaning method of an apparatus for depositing a carbon-containing film is provided. The method includes in-situ cleaning an inside of a reactor of the apparatus, wherein the cleaning of the inside of the reactor of the apparatus comprises supplying a cleaning gas including halogens with being activated by using a remote plasma generator to the reactor and simultaneously supplying a carbon-removing gas without being activated to the reactor. In the method, a by-product in a solid form is not generated, and in-situ cleaning can be performed without stopping the apparatus for depositing a carbon-containing film after a predetermined amount of wafers are treated, such that productivity of the apparatus for depositing a carbon-containing film can be maximized.

An Static Random Access Memory (SRAM) device and a method of operating the same. In one embodiment, the SRAM device includes: (1) an SRAM array coupled to row peripheral circuitry by a word line and coupled to column peripheral circuitry by bit lines and (2) an array low voltage control circuitry that provides an enhanced low operating voltage VESS to the SRAM array during at least a portion of an active mode thereof.

A colored dispersion according to the present invention comprises a resin including monomers of Formulas 1 to 4, as a binder resin.Accordingly, a photoresist composition for a black matrix of a high light shielding property, which has the dispersion stability of the colored dispersion according to the present invention, could be provided, and a black matrix of high sensibility having an uniform process characteristic while maintaining a high light-shielding property could be produced.

The invention discloses a graphene-flaky conductive mica oil tank static electricity conduction anticorrosive paint and a preparation method thereof. The paint uses epoxy resin as matrix resin, uses modified graphene and conductive mica as a two-component conductive filler, and adopts an isocyanate curing agent. The paint has the advantages of static electricity conduction, heat conduction, corrosion resistance and the like, the method is simple in technology, and the sources of the raw materials are wide. The preparation method of the graphene-flaky conductive mica oil tank static electricity conduction anticorrosive paint provided by the invention mainly comprises the following steps: synthesis of modified graphene, synthesis of isocyanate tripolymer and preparation of the oil tank static electricity conduction anticorrosive paint, wherein the graphene and the flaky conductive mica serve as the two-component conductive filler, the epoxy resin serves as the matrix resin, and an appropriate amount of a solvent is added, so that the graphene-flaky conductive mica oil tank static electricity conduction anticorrosive paint is obtained.

The invention discloses a synthetic method of a polyester type polyurethane enamelled wire varnish with a high heat-resistant grade, the enamelled wire varnish prepared by adopting the method has high heat-resistant performance and the heat-resistant grade reaches 200 or above. The synthetic method disclosed by the invention is characterized by comprising the synthetic processes of imine and ethanol amine modified polyester resin as follows: adding diethylene glycol, diethanol amine, trimethylol propane, tris-(2-hydroxyethyl) cyanuric acid and a catalyst into a reactor; heating the mixture to 100 to 120 DEG C; further adding dimethyl terephthalate, partial dianhydride and modified imine dicarboxylic acid; heating to 140 to 150 DEG C; reacting for more than 4 h; heating to 220 to 230 DEG C; reacting for more than 12 h; conducting vacuum operation when the temperature of a distillation head is below 65 DEG C until the viscosity is between 1300 to 1800 mPa.s (25 DEG C); adding cresol and xylene and stirring for dissolving and clarifying to obtain the imine and ethanol amine modified polyester resin until the solid content reaches 44%.

The invention relates to 180 grade polyurethane enamelled wire insulating paint used for an ultra-fine wire. The insulating paint is prepared by the following components of 14-20 parts of an imide-modified polyester resin, 36-50 parts of a blocked isocyanate resin, 0.02 part of zinc acetate, 0.35-0.75 part of an amino condensation compound, 0.02-0.05 part of silicone oil, 0.2-0.6 part of acrylic ester, 17-27 parts of dimethylbenzene, 7-17 parts of phenol and 5 parts of n-butyl alcohol. High heat grade non-pinhole rapid direct-welding polyurethane enamelled wire insulating paint is produced by mixing paint with the above materials at a temperature of 60-70 DEG C. Compared with a conventional insulating paint, the enamelled wire insulating paint provided by the invention has good leveling property, and can meet the requirements of a production process with specification of 0.02 mm and production speed of 1500 m / min. The prepared enamelled wire has smooth and bright surfaces and has no shining points. The prepared enamelled wire has high a soft breakdown temperature which is higher than 260 DEG C. The prepared enamelled wire has good salt-water pinhole resistant performance and is resistant to knead and stretch salt-water pinholes in salt water. The prepared enamelled wire has good directly welding performance and is capable of being directly welded at a temperature of 375 DEG C. The prepared enamelled wire has wide process redundancy and is convenient for realizing stable process production.

The present invention provides a positive photosensitive resin composition which can form a cured film excellent in process resistance such as heat resistance, solvent resistance or long-time baking resistance and transparency, and which is excellent in photosensitive properties such as resolution and sensitivity, and which has high storage stability and a wide process margin. Further, the present invention provides a positive photosensitive resin composition having such high reliability that no deterioration of electrical characteristics will be led in its application for liquid crystal display devices. A positive photosensitive resin composition characterized by comprising an alkali-soluble resin which is a copolymer essentially comprising an unsaturated carboxylic acid derivative and an N-substituted maleimide and which has a number average molecular weight of from 2,000 to 20,000, a 1,2-quinone diazide compound represented by the formula (1): (wherein each of D independently is a hydrogen atom or an organic group having a 1,2-quinone diazide group, R1 is a tetravalent organic group, provided that at least one of D is an organic group having a 1,2-quinone diazide group), and from 5 to 50 parts by weight, per the alkali-soluble resin, of a crosslinking compound represented by the formula (2): (wherein n is an integer of from 2 to 10, m is an integer of from 0 to 4, and R2 is a n-valent organic group).

The invention relates to a high-heat-grade non-pinhole rapid direct welding polyurethane enameled wire insulating varnish and a preparation method thereof. The preparation method comprises: the preparation of polyester resin; using TMP, MDI, phenol or m-cresol to synthesize blocked isocyanic acid resin in two steps; Cyanic acid resin, 15 parts by weight of xylene, 10 parts by weight of phenol, and 5 parts by weight of n-butanol are mixed and painted at 60-70°C to form a high-heat level non-pinhole fast direct-welding polyurethane enameled wire insulating varnish. The produced enameled wire has high heat resistance, the thermal class can reach 180, the softening breakdown is above 230°C, and the hot shock temperature is 200°C (the test method refers to IEC60851); it can be directly welded at 330°C, and there is no residue after direct welding; Kneading and stretching salt water pinholes in water; the flue loss in the oven is relatively small, and there is no obvious cracking product on the surface of the enameled wire. When using this product to manufacture enameled wire, the process margin is wide, which facilitates the realization of robust process production.

A semiconductor device includes a first semiconductor layer surrounding a bottom of the trench gate, a second semiconductor layer disposed along one of end portions of the trench gate in a longitudinal direction of the trench gate, one of end portions of the second semiconductor layer contacting the body layer and the other of the end portions of the second semiconductor layer contacting the first semiconductor layer, and a connecting layer, one of end portions of the connecting layer being connected to the body layer and the other of the end portions of the connecting layer being connected to the first semiconductor layer, the connecting layer contacting the second semiconductor layer, and the connecting layer being separated from the one of the end portions of the trench gate in the longitudinal direction of the trench gate by the second semiconductor layer.

A method and system for isolation trenches includes forming isolation trenches in a semiconductor substrate, filling the trenches with a filler material, creating voids near top edges of the trenches and annealing by a gaseous ambient to reflow the edges of the trenches causing the edges to become rounded and overhang the trench. The filler material may be a dielectric. Transistors are then formed in close proximity to the trenches and may include source / drain regions formed in the rounded portion of the semiconductor substrate that overhangs the trench.

Provided is a direct contact technology by which a barrier metal layer between an Al alloy wiring composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. In a wiring structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al-Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen or carbon or fluorine contained in the (N, C, F) layer, is bonded with Si contained in the semiconductor layer.

The present invention provides a positive photosensitive resin composition which can form a cured film excellent in process resistance such as heat resistance, solvent resistance or long-time baking resistance and transparency, and which is excellent in photosensitive properties such as resolution and sensitivity, and which has high storage stability and a wide process margin. Further, the present invention provides a positive photosensitive resin composition having such high reliability that no deterioration of electrical characteristics will be led in its application for liquid crystal display devices.A positive photosensitive resin composition characterized by comprising an alkali-soluble resin which is a copolymer essentially comprising an unsaturated carboxylic acid derivative and an N-substituted maleimide and which has a number average molecular weight of from 2,000 to 20,000, a 1,2-quinone diazide compound represented by the formula (1):(wherein each of D independently is a hydrogen atom or an organic group having a 1,2-quinone diazide group, R1 is a tetravalent organic group, provided that at least one of D is an organic group having a 1,2-quinone diazide group), and from 5 to 50 parts by weight, per the alkali-soluble resin, of a crosslinking compound represented by the formula (2):(wherein n is an integer of from 2 to 10, m is an integer of from 0 to 4, and R2 is a n-valent organic group).

The invention relates to an application of a silica nano material in polyester-imide enameled wire insulating varnish. The method for dispersing nano-silica in polyester-imide varnish comprises the following steps in sequence: predispersing 6-8 parts of nano-silica and 0.6 parts of gamma-aminopropyl triethoxysilane (KH550) in 40 parts of modified polyester varnish, feeding silica into the above pre-dispersion A for not less than three times at intervals of 20-40 min so as to generate a pre-dispersion A; adding 50 parts of polyester-imide enameled wire insulating varnish and 10 parts of modified polyester enameled wire insulating varnish into the pre-dispersion A, dispersing for 1 hour to generate a pre-dispersion B; performing circulating continuous dispersion of the pre-dispersion B in a rod-pin dispenser for 3 hours, wherein the temperature of a dispersing cavity is controlled to be not more than 70 DEG C. Enameled wires prepared by the method of the invention have corona resistance which is up to above 100 times of that of common enameled wires; the prepared enameled wires have smooth surfaces without bright spots; the storage life of the insulating varnish is up to 1 year; the process has wide redundancy, and is convenient for the realization of robust process production.

An acrylic copolymer having a specific structure and a radiation-sensitive resin composition comprising the acrylic copolymer having high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, dry etching resistance, and pattern shape, and, in particular, excelling in forming contact holes and lines-and-spaces.

A method for manufacturing an epitaxial wafer includes: a step of pulling a single crystal from a boron-doped silicon melt in a chamber based on a Czochralski process; and a step of forming an epitaxial layer on a surface of a silicon wafer sliced from the single crystal. The single crystal is allowed to grow while passed through a temperature region of 800 to 600° C. in the chamber in 250 to 180 minutes during the pulling step. The grown single crystal has an oxygen concentration of 10×1017 to 12×1017 atoms / cm3 and a resistivity of 0.03 to 0.01 Ωcm. The silicon wafer is subjected to pre-annealing prior to the step of forming the epitaxial layer on the surface of the silicon wafer, for 10 minutes to 4 hours at a predetermined temperature within a temperature region of 650 to 900° C. in an inert gas atmosphere. The method is to fabricate an epitaxial wafer that has a diameter of 300 mm or more, and that attains a high IG effect, and involves few epitaxial defects.

The invention discloses wire enamel with a high thermal level and high abrasion resistance. The wire enamel is characterized by being prepared from raw materials in parts by weight (kilogram) as follows: 11-13 parts of phenolic resin, 11-15 parts of nylon 12, 3-6 parts of precipitated barium sulfate, 12-16 parts of polyurethane resin, 11-17 parts of E-12 epoxy resin, 1-2 parts of butyltin oxide, 2-3 parts of polyvinylpyrrolidone, 5-7 parts of phenyl glycidyl ether, 8-10 parts of neopentyl glycol, 2-4 parts of diphenylmethane diisocyanate, 1-3 parts of a silane coupling agent KH550, 7-9 parts of trimethylolpropane triacrylate, 1-2 parts of potassium acetate, 7-9 parts of an assistant, 95-115 parts of m, p-cresol and 100-120 parts of xylene. According to the wire enamel with the high thermal level and high abrasion resistance and a preparation method of the wire enamel, the preparation method is simple, the cost is low, a wire enamel film prepared with the preparation method has good adhesiveness and excellent scratch resistance, the temperature classification of the prepared wire enamel can be up to 200 DEG C, the oil resistance is good, the process redundancy is high, and steady technological production can be realized conveniently.