85results about How to "Structural defect" patented technology

A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti) and having an atomic ratio between Si and M in which the value of x, when express as Si_1-xM_x, is 0.1≦×≦0.7 in the case where M is Mn or 0.1≦×≦0.25 in the case where M is Ti at a temperature of the melt which is below 2000° C. The C component is preferably supplied into the melt by dissolution of a graphite crucible which contains the melt such that the melt is free from undissolved C. One method of crystal growth is performed by cooling the melt after a seed substrate is immersed in the melt.

A method for surgical repair of damaged or diseased head and neck tissues is described. In one aspect of the invention tissue graft constructs comprising vertebrate submucosa or vertebrate basement membrane materials are used to repair and promote growth of endogenous vocal cord tissue.

In an electronic component, an active chip element and a passive chip element are respectively enclosed within first and second resin layers, which are separately disposed on upper and lower surfaces of a core substrate, respectively. The first resin layer includes a shielding metal film disposed on an upper surface thereof and a first via-hole conductor which connects the shielding metal film with a circuit pattern provided on the core substrate. The second resin layer includes an external-terminal electrode disposed on a lower surface thereof and a second via-hole conductor which connects the external-terminal electrode with a circuit pattern provided on the core substrate.

A nickel powder with a mean particle size of 0.05 to 1.0 μm, the nickel powder comprising a thin oxidized layer of nickel on a surface thereof and having an oxygen content of 0.3 to 3.0 wt. % and a carbon content of 100 ppm or less per specific surface area of 1 m²/g of the powder, in a weight proportion of carbon to the nickel powder of unit weight. When the powder is used for a conductive paste for forming inner electrode layers of a multilayer electronic component, it enables the decrease in the residual carbon amount after a binder removal process, thereby making it possible to obtain a multilayer ceramic electronic component with excellent electric characteristics and high reliability in which electrode layers excelling in continuity are formed without decreasing the strength and electric characteristics of the electronic component or creating structural defects.

The disclosure provides a 3D printing apparatus and a 3D printing method which form a 3D object by forming and stacking a plurality of forming layers. The 3D printing apparatus includes a body, a printing module, a curing module, a sensing module and a controlling module. The body has a stage. The printing module sprays liquid forming material on the stage. The curing module cures the liquid forming material on the stage to form a forming layer. The sensing module is configured corresponding to the stage and detects a surface profile of the forming layer according to a condition parameter to generate a profile signal. The controlling module is electrically connected to the printing module, sensing module and curing module. The controlling module receives the profile signal and drives the printing module and the curing module according to the profile signal to remedy the surface profile of the forming layer.

The present invention relates to a new process of synthesizing conductive polymers from monomers substituted with amine group. The process provides simple synthesizing steps for the conductive polymers without using other additives such as stabilizers or emulsifiers. The conductive polymers synthesized according to the present invention have highly enhanced solubility in common organic solvents and electrical conductivity compared to conventional conductive polymers. Therefore, the conductive polymers synthesized according to the present process can be utilized in applications that require high electrical conductivity, for example an electromagnetic interference shield or a transparent electrode of thin film, as well as in specific applications such as various conductive films, fibers, polymer blends, battery electrodes or conductive etch mask layers.

A touch panel and a peripheral circuit thereof are provided. Each bonding pad of the peripheral circuit includes a first conductive layer, a first protective layer, a second conductive layer, and a second protective layer sequentially arranged on a substrate from bottom to top. A covered area of the second conductive layer provided by the second protective layer is increased to cover a portion of the second conductive layer located above a junction area between the first protective layer and a terminal part of the first conductive layer, thereby increasing the reliability of the bonding pads.

The present invention relates to a process for the preparation of a full-ceramic dental restoration, comprising heat pressing of a tooth coloured pressing glass on a fully or partially supporting structure of yttria doped tetragonal zirconia (YTZP), comprised of yttria doped tetragonal zirconia ceramic having a grain size, as measured by the linear intercept method, of less than 0.6 μm, wherein the pressing glass has a thermal expansion coefficient (TEC) of between 9.0 and 11.0 μm/m.K (measured in the range of from 25 to 500° C.) and wherein the pressing glass has a pressing temperature of between 750 and 1200° C. In a further aspect, the invention relates to a full-ceramic dental restoration, comprising a fully or partially supporting structure of yttria doped tetragonal zirconia (YTZP) and a heat pressed tooth coloured pressing glass, which restoration is modeled to be in occlusal contact with opposing teeth and in mesio-distal contact with neighbouring teeth.

On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.

A metallic alloy is prepared from a gaseous mixture of at least two non-oxide precursor compounds, wherein the non-oxide precursor compounds collectively comprise the metallic constituents. The mixture of the non-oxide precursor compounds is oxidized to form a solid mixed metallic oxide. The solid mixed metallic oxide is chemically reduced to produce the metallic alloy.

This invention relates to a micromachined ESD protection device and its microfabrication method for light emitting diode (LEDs) chips. The LEDs is coupled to the ESD protection device in a shunt connection to absorb and eliminate the electrostatic charges induced by human contact or other voltage spike sources. The ESD protection circuit can prevent the LED from burning down and extend its lifespan. By using a thick polyimide layer as the dielectric film for capacitors in the micromachined ESD protection device at the current invention has the advantages with high breakdown voltage compared to other ESD protection circuits. And furthermore, the device in the current invention is easy for mass production with low manufacturing cost. Another embodiment of the present invention is that the multiple-array arrangement in current micromachined ESD protection device could greatly enhance the liability due to multiple-protection and thus to provide the possibility of multiple-times usage.

A method for manufacturing an ink jet recording head, which is provided with a recording elemental substrate having discharge port group for discharging ink, an electric wiring substrate electrically connected with the recording elemental substrate, and a supporting member for holding and fixing the recording elemental substrate and the electrical wiring substrate, comprises the steps of injecting thermohardening filler into a filler retaining portion communicated with the sealing area requiring sealing; filling the area with the thermohardening filler injected into the filler retaining portion by heating the filler to flow; and hardening the filled thermohardening filler. With the structure thus arranged, it is possible to eliminate any electrical and structural defects in order to materialize a highly reliable and compact ink jet recording head.

Disclosed is an automatic stir-fryer comprising: a machine stand; a base pivotably provided on the machine stand; a rotary shaft providing rotary power and connected to a stir-frying rotary tank containing foodstuffs; a high-frequency induction heating unit coaxially covering the stir-frying rotary tank; a tilting unit pivotably disposed on the base; a receiving tank provided on the machine stand for receiving the cooked foodstuffs and controlled by an automatic push rod to move forward and backward; a cleaning unit assembled on the machine stand and corresponding to the stir-frying rotary tank after tilting by the tilting unit for water cleaning the stir-frying rotary tank; a control unit vertically disposed on the machine stand and provided with an control panel for controlling the operating time of the automatic stir-fryer and the temperature of the high-frequency induction heating unit.

The main object is to provide a manufacturing method of organic semiconductor, an organic semiconductor device structure manufactured by the manufacturing method and an organic semiconductor device, those having uniform and high carrier transport property over a relatively large area. To achieve the object, the present invention provides a manufacturing method of an organic semiconductor structure, wherein the organic semiconductor structure comprises, on a base material, an organic semiconductor layer formed from a liquid crystalline organic semiconductor material, and comprising processes of: forming an oil repellent region and a lipophilic region, which is surrounded by the oil repellent region, on the base material; coating an organic semiconductor layer forming solution, comprising the liquid crystalline organic semiconductor material and a solvent, on the lipophilic region; and crystallizing the liquid crystalline organic semiconductor material by evaporating the solvent in the organic semiconductor layer forming solution coated on the lipophilic region.

Electrochemical plating polymer additives and method which reduces metal overburden in an electroplated metal while optimizing gap fill capability are disclosed. The polymer additives are provided in an electrochemical plating bath solution and may include low cationic charge density co-polymers having aromatic and amine functional group monomers. The low cationic charge density polymers may include benzene or pyrollidone functional group monomers and imidazole or imidazole derivative functional group monomers.

Methods, systems and devices for assembling components to form an assembled structure, using virtual or augmented assembly tooling, in real time, real-time virtual assembly tooling (or RVAT). Structures such as vehicles, aircrafts, or other products are produced from assembling a plurality of component parts together, with virtual assembly tooling of the system, method and devices that provides real-time capability for directing and guiding operations and for generating feedback. The structure is built from the CAD, transforming the CAD to imaging representations whose transformations are generated with one or more component scans, projected on a display. The method, system and devices are constructed to build a product from a CAD through transformations of CAD information in conjunction with the real-time imaging and tracking of assembly components and tooling precise positioning of components, and controlling assembly operations, such as, for example, assembly, drilling, riveting, bonding, and welding, a product is constructed.

An inductor array chip includes a magnetic laminated body and a plurality of inductors. The magnetic laminated body includes a plurality of stacked magnetic layers. The plurality of inductors are arranged inside the magnetic laminated body. The inductance of a first inductor differs from the inductance of a second inductor. The inductors include a plurality of coil-shaped conductors and via-hole conductors. The plurality of coil-shaped conductors are arranged between the magnetic layers. The via-hole conductors electrically connect the plurality of coil-shaped conductors. The inductors include a plurality of inductors in which the section sizes of the coil-shaped conductors differ from one another.

A method for evaluating sealing of a bipolar structure including a sheet-like substrate forming a current collector, and two electrodes in a form of films arranged on opposite surfaces of the substrate, respectively, the method including: placing the bipolar structure in a cavity to define first and second compartments therein, which are separated by the bipolar structure, a periphery of which is sealingly connected to the cavity; circulating a fluid in the first compartment of the cavity toward the second compartment; and evaluating sealing of the bipolar structure from a measurement of difference in pressure of the fluid in the first and second compartments.

A consistent reduction in temperature in an SOI substrate manufacturing process is achieved.

A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below and an oxide film 14 obtained based on a CVD method. Since the thermal oxide film 13 is a thin film of 100 Å or below, a low temperature of 450° C. or below can suffice. The underlying thermal oxide film 13 can suppress a structural defect, e.g., an interface state, and the CVD oxide film 14 formed on the thermal oxide film can be used to adjust a thickness of the gate oxide film. According to such a technique, a conventional general silicon oxide film forming apparatus can be used to form the gate oxide film at a low temperature, thereby achieving a consistent reduction in temperature in the SOI substrate manufacturing process.