85results about How to "Structural defect" patented technology

A method for manufacturing a capacitor using a tantalum oxy nitride (TaON) film in a process for a semiconductor device. More particularly, a method for manufacturing a capacitor which reduces a number of steps and thus increases yield by in-situ performing P-doping after forming a MPS (Metastable Poly Silicon) on a lower electrode and forming a nitride film before forming a tantalum oxy nitride film to prevent the concentration of phosphor contained in the lower electrode from being reduced by removing the phosphor on the surface of the lower electrode in a cleaning process between the above two steps, for thereby increasing the capacitance of the capacitor.

A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and are covered by the gate structure. The epitaxial structures are disposed at one side of the gate structure and respectively directly contact each fin-shaped structure, wherein the epitaxial structures are spaced apart from each other. The silicon cap simultaneously surrounds the epitaxial structures.

There is provided a loading device for applying a load to a composite structure during a non-destructive inspection. The loading device comprises a load indicator to indicate the load applied, which is preferably a normal load, and comprises a connector attached to the load indicator to connect the loading device to a surface of the structure. A support contacts the structure to support the load indicator and the connector. The support preferably comprises a plate and three legs, wherein the load indicator is attached to the plate and the legs contact the structure. The legs may comprise protective ends for contacting the structure and may define adjustable lengths. A load applicator in mechanical communication with the connector and the load indicator applies the load to the structure, advantageously by reducing the distance between the connector and load indicator to create the load. The connector may connect to the surface of the structure defining a protrusion or to a protrusion removably adhered to the surface of the structure.

A nickel powder with a mean particle size of 0.05 to 1.0 μm, the nickel powder having a thin oxidized layer of nickel on a surface thereof, an oxygen content of 0.3 to 3.0 wt. % and a carbon content of 100 ppm or less per specific surface area of 1 m2 / g of the powder, in a weight proportion of carbon to the nickel powder of unit weight. When the powder is used for a conductive paste for forming inner electrode layers of a multilayer electronic component, it enables a decrease in the residual carbon amount after a binder removal process, thereby making it possible to obtain a multilayer ceramic electronic component excellent electrical characteristics and high reliability in which electrode layers excelling in continuity are formed without decreasing the strength and electrical characteristics of the electronic component or creating structural defects.

A multi-terminal multilayer capacitor reducing an equivalent series inductance (ESL), whose design flexibility is high, in which cost of electrode material is low, and in which a structural defect hardly occurs includes lead portions of first and second internal electrodes and lead portions of third and fourth internal electrodes that are disposed along the length of each of two side surfaces so as to be alternately exposed. Preferably, the first and third internal electrodes, and the second and fourth internal electrodes are disposed so as to be arranged along the length of each side surface in a coplanar manner, with a predetermined distance provided between two internal electrodes. When viewed in a laminating direction of dielectric layers, a capacitor-forming portion of the first internal electrode does not overlap with a capacitor-forming portion of the fourth internal electrode, and a capacitor-forming portion of the second internal electrode does not overlap with a capacitor-forming portion of the third internal electrode.

Electrochemical plating polymer additives and method which reduces metal overburden in an electroplated metal while optimizing gap fill capability are disclosed. The polymer additives are provided in an electrochemical plating bath solution and may include low cationic charge density co-polymers having aromatic and amine functional group monomers. The low cationic charge density polymers may include benzene or pyrollidone functional group monomers and imidazole or imidazole derivative functional group monomers.