40results about How to "Specific resistance" patented technology

A liquid developer which includes an insulating liquid, and toner fine particles containing a coloring agent and a toner resin. In the liquid developer, its electric capacitance does not significantly vary in an electric circuit where an electrical double-layer capacitor and an electronic resistance corresponding to a velocity of an electron exchange during an electrode reaction are connected in parallel, and a resistance corresponding to an electric conductivity of the insulating liquid is connected in series. The coloring agent has a coating layer so as to maintain distances between the toner fine particles. The insulating liquid has a viscosity of 0.5 mPa·s to 1000 mPa·s, a specific resistance of 1×1012 Ωcm or more, and a surface tension of 30 dyn / cm or less, and may be a nonvolatile liquid having a boiling point of 100° C. or higher.

Apparatus and method are provided for extending a microprocessor instruction set to allow for instruction-level specification of floating point format to be employed during execution of an associated floating point operation. The apparatus includes translation logic and extended execution logic. The translation logic translates an extended instruction into corresponding micro instructions. The extended instruction has an extended prefix and an extended prefix tag. The extended prefix specifies the floating point format. The extended prefix tag indicates the extended prefix, where the extended prefix tag is an otherwise architecturally specified opcode within an instruction set for a microprocessor. The extended execution logic is coupled to the translation logic. The extended execution logic receives the corresponding micro instructions, and executes the associated floating point operation according to the floating point format specified by the extended prefix.

The characteristics of a shield wall that prevents the mutual interference of the noise between components are improved by lowering the resistance of the shield wall. A high-frequency module 1a includes a wiring board 2, a plurality of components 3a to 3e mounted on an upper surface 2a of the wiring board 2, a sealing resin layer 4 stacked on the upper surface 2a of the wiring board 2 to seal the components 3a to 3e, and a shield wall 5 disposed between the adjacent components in the sealing resin layer 4. A part of the shield wall 5 is constituted of metal pins 5a standing on the upper surface 2a of the wiring board 2.

A liquid immersion device that has an mixing mechanism that mixes and dissolves a predetermined substance for adjusting specific resistance of the liquid, which is supplied onto a liquid repellent film on the surface of an object (member) of a projection optical system placed on the light emitting side of projection optical system, and an liquid immersion area is formed by supplying the liquid in which the predetermined liquid is dissolved onto the liquid repellent film.

A multi-layer piezoelectric element of high reliability and high durability, that undergoes smaller variations in the amount of displacement even when used under a high electric field and high pressure and is subject to less variations in the amount of displacement even when used in continuous operation over a long period of time is provided. The multi-layer piezoelectric element comprises a stack formed by stacking piezoelectric layers and internal electrodes alternately one on another and external electrodes formed on a first side face and on a second side face of the stack, wherein one of the adjacent internal electrodes is connected to the external electrode on the first side face and the other internal electrode is connected to the external electrode formed on the second side face, while the ratio of change in the amount of displacement of the element after undergoing continuous operation of 1×109 cycles or more to the initial device dimension is not larger than 5%.

A distributed printing control apparatus of the invention includes a storage module that stores identification information for identifying at least a previous distribution destination printing device, and a control module. On reception of a print job sent under a preset condition, the control module specifies a current distribution destination printing device based on the identification information, among residual printing devices other than the previous distribution destination printing device, sends the received print job to the specified current distribution destination printing device, and stores information for identifying the specified current distribution destination printing device as the identification information into the storage module. The technique of the invention distributes multiple print jobs to multiple printing devices under the policy of restricting specification of an identical printing device for consecutive distribution of sequential print jobs. This arrangement desirably prevents inefficient concentration of print jobs on one particular printing device and completes printing in a short time period.

An easy-to-use and inexpensive memory device is provided while maintaining product specifications and productivity even when a memory is formed on the same substrate as other functional circuits. The memory device of the invention includes a memory cell formed on an insulating surface. The memory cell includes a semiconductor film having two impurity regions, a gate electrode, and two wirings connected to the respective impurity regions. The two wirings are insulated from each other by applying a voltage between the gate electrode and at least one of the two wirings to alter the state of the semiconductor film.

The invention provides a network of devices and a set of processors which control and / or monitor these devices by executing code defining a data-model for the network. This data-model incorporates a set of logical-nodes encapsulating network function and / or network devices, and are arranged in a hierarchy for centralised control and / or monitoring. Each logical-node includes a service-module having a set of connections for service-events and can store and / or update service-data objects, with service-events and service-data objects conforming to types defined by a network standard. Each logical-node also includes an intelligence-module having connections to exchange intelligence-events with other intelligence-modules and being operable to participate in intelligence-operations distributed across multiple intelligence-modules, and may generate service-intelligence-data defining service-events for one or more service-modules.

A multi-layer ceramic capacitor having temperature characteristics capable of satisfying X8R characteristics and having a high specific resistance in a high temperature environment and dielectric ceramics used in the capacitor, the dielectric ceramics containing, as a main ingredient, a compound represented by:(Bi0.5Na0.5)xBa1-xTiO3 in which x is from 0.05 to 0.2 and containing,from 0.25 mol to 1.50 mol of at least one rare earth metal selected from Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Y based on 100 mol of the main ingredient,from 0.20 mol to 1.5 mol of Mg based on 100 mol of the main ingredient, andfrom 0.03 mol to 0.60 mol of at least one metal selected from V, Cr, and Mn based on 100 mol of the main ingredient.

An epitaxial silicon wafer in which on growing an epitaxial film only on the front side of a large-sized wafer which is 450 mm or more in diameter, the wafer can be decreased in warpage to obtain a high intrinsic gettering performance and a method for producing the epitaxial silicon wafer. Intrinsic gettering functions have been imparted to a high resistant large-sized silicon wafer which is 450 mm or more in diameter and 0.1 Ω·cm or more in specific resistance by introducing nitrogen, carbon or both of them to a melt on pulling up an ingot. Thereby, after the growth of an epitaxial film, a silicon wafer is less likely to warp greatly. As a result, it is possible to decrease the warpage of an epitaxial silicon wafer and also to obtain a high intrinsic gettering performance.

The present invention relates to in-place soil stabilization. Specifically, the present invention relates a method and device for measuring the increase in subsurface earth pressure during the injection of a stabilizing agent into the soil. The rise in sensor pressure indicates an increase in soil strength and bearing capacity. Therefore, real-time monitoring of these pressures may serve as a guide during the injection process.

A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal.

The present invention relates to in-place soil stabilization. Specifically, the present invention relates a method and device for measuring the increase in subsurface earth pressure or soil displacement during the injection of a stabilizing agent into the soil and prior to surface movement. The rise in sensor pressure or displacement of soil indicates an increase in soil strength and bearing capacity. Therefore, real-time monitoring of these pressures or movements may serve as a guide during the injection process.

A small-sized inductor with desired characteristics is provided. An inductor 1a includes a resin layer 3 and an inductor electrode 6, which includes an inner winding portion 6a and an outer winding portion 6b. The inner winding portion 6a and the outer winding portion 6b forming the inductor electrode 6 include the metal pins 7a to 7d and the wiring boards 8a to 8d. Here, the inner winding portion 6a and the outer winding portion 6b include the metal pins 7a to 7d and the wiring boards 8a to 8d, which have lower specific resistance than conductive paste or plating. This structure thus can reduce the resistance of the entirety of the inductor electrode 6, and improve the characteristics of the inductor 1a. The inductor 1a can reduce its size by including the inductor electrode 6 wound to have a multiplex winding structure.

An active matrix liquid crystal display device is provided, in which an after image remaining after removing an application of a direct current voltage is suppressed. The active matrix liquid crystal display device has a liquid crystal layer containing a liquid crystal molecule having negative dielectric anisotropy and a dopant having a dissociative group.

This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10+1 to 10+8 Ωcm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.

A film forming method for a transparent electrically conductive film that forms a zinc oxide-based transparent electrically conductive film on a substrate by sputtering using a target containing a zinc oxide-based material, performing the sputtering in a reactive gas atmosphere that contains two types or three types selected from among a group consisting of hydrogen gas, oxygen gas and water vapor.

An automated test equipment for testing a device under test includes a control unit and a plurality of tester subunits. The control unit is configured to put the tester subunits in a state of lower activity in dependence on a current demand on the test resources.

A valve device is provided with a contraction-type high polymer gel actuator which laminates slab-like negative plates and mesh-like positive plates alternately and interleaves high polymer gel between each negative plate and each positive plate, and with a first and a second valve mechanisms driven by the gel actuator. The direction of deformation of expansion and contraction of the high polymer gel actuator is the same as the driving direction of the first valve mechanism and perpendicular to the driving direction of the second valve mechanism. The valve device is composed in such a way as to switch opening and closing of a first fluid passage and a second fluid passage simultaneously by means of deformation of expansion and contraction by controlling voltage applied to the high polymer gel actuator. This allows to compose a valve device that can open and close plural oil passages at an identical timing.

A vibration control device, while applying Gaussian vibration that matches a target vibration physical quantity PSD to a test piece, makes a corresponding vibration physical quantity non-Gaussian. Using a response vibration physical quantity PSD and a target vibration physical quantity PSD, a control vibration physical quantity PSD calculation generates a control vibration physical quantity PSD for generating a drive signal. A PSD conversion converts the control vibration physical quantity PSD into a control corresponding vibration physical quantity PSD of another dimension. Using the control corresponding vibration physical quantity PSD, a control corresponding vibration physical quantity waveform calculation calculates a control corresponding vibration physical quantity waveform that is non-Gaussian. At least based on the control characteristics and the control corresponding vibration physical quantity waveform, a drive waveform calculation generates a next drive waveform such that vibration that matches the control corresponding vibration physical quantity waveform is applied to a test piece.

A current feed-through for an electrically heatable catalytic converter, wherein the catalytic converter has in the interior thereof at least one electrical conductor, which is electrically contactable by the current feed-through, having a central electrically conductive element, which is guided from the interior of the catalytic converter through the outer housing wall thereof, having an electrical insulation layer, which surrounds the electrically conductive element on its radial outer face, and having a metallic sleeve, in which the electrically conductive element and the electrical insulation layer is received, wherein at the current feed-through or directly adjacently to the current feed-through there is arranged a device for reducing the heat conduction from the interior of the catalytic converter along the current feed-through to a contact face arranged outside the catalytic converter.

A substrate structure for a plasma display panel (PDP), a method of manufacturing a PDP substrate structure of the PDP, and a PDP including the PDP substrate are provided. The PDP substrate structure includes a substrate, an electrode on the substrate and including a first layer and a second layer, the second layer including an aluminum (Al) material, the first layer being between the substrate and the second layer and including a conductive material, the first layer having lower specific resistance than that of the second layer; and a light absorbable layer on the substrate. The light absorbable layer is an oxidization product of the conductive material of the first layer.

The conductive composition of the present embodiment contains metal nanoparticles having an average particle diameter of 30 nm to 600 nm, metal particles having an average particle diameter larger than that of the metal nanoparticles, a thermosetting resin having an oxirane ring in a molecule, a curing agent, and a cellulose resin. Then, the specific resistance of the conductor formed by applying and calcining the conductive composition on the substrate is preferably 5.0×10−6 Ω·cm or less, and the conductor does not peel from the substrate when a tape having an adhesive force of 3.9 N / 10 mm to 39 N / 10 mm is pressed against the conductor and peeled off.