The invention discloses a manufacturing method of a GaInP / GaAs / InGaAsP / InGaAs four-junction
solar battery. By utilizing a
wafer bonding method, the GaInP / GaAs / InGaAsP / InGaAs four-junction
solar battery is integrated by a GaInP / GaAs double-junction
solar battery growing based on a GaAs substrate and a InGaAsP / InGaAs double-junction solar battery growing based on an InP substrate; by utilizing the InP as a supporting substrate, the four-junction solar battery with respective
band gap energies of 1.9 / 1.4 / 1.05 / 0.72 eV is realized,
sunlight full
spectral absorption and energy conversion are realized to a greater degree, and 32.8 percent of efficiency is realized in
irradiation of AM1.5G and under the sun. Based on the development of two kinds of double-junction batteries, the bonded four-junction solar battery reduces the shortages of high cost caused by utilizing a plurality of different substrates in a mechanical
cascade solar
battery system and complex optical
system and optical loss in an optical integrated battery, and effectively solves the problem of lattice mismatching of growing a uniwafer four-junction
cascade semiconductor solar battery material. The
high voltage and low current outputs are realized and the resistance consumption in a high
concentrator battery is reduced.