30results about How to "Extra layer" patented technology

A cloud-based wireless communication system (1) comprising user devices (12) arranged to receive services through any of a plurality of cloud-based virtual networks. The system has a plurality of base stations or access points (14), a user device (12) being arranged to wirelessly connect to any of the virtual networks via at least one base station (14) in order to receive from a virtual network a specific service for which a user of the user device has subscribed. There are virtual service anchors or vSAs (26) in the cloud, each virtual service anchor provided for a respective service provided by its virtual network. Thus, one vSA (26) handles resource allocation for all users of one service in one virtual network. Each vSA (26) receives content access requests (S10) from user devices (12) indicating content to be accessed in that vSA's service, the content stored by at least one content delivery node in the cloud. The vSA (26), in response to the content access requests, identifies (S12, S14) at least one suitable Content Delivery Node based on the indicated content and base stations proximate to the user device, and transmits service requests (S16, S22). In response to service requests received from multiple vSAs (26), each base station (14) performs second resource allocation, to provide services to each user device (12) wirelessly connected to that base station (14).

A method for producing an optical article. A first layer that is light-transmissive is formed on an optical substrate directly or with an additional layer in between. A silicide material, light-transmissive thin film is formed on the surface of the first layer.

A lower barrier layer made of tantalum nitride having a thickness of approximately 25 nm is deposited by sputtering on a fourth insulating film inclusive of the sidewall surfaces and the bottom surfaces of a via hole and an upper-interconnect-forming groove. The sputtering is performed under the conditions where approximately 10 kW of DC source power is applied to a target. Thereafter, the DC source power is reduced to approximately 2 kW, and approximately 200 W of RF power is applied to a semiconductor substrate. Here, the lower barrier layer is subjected to a sputter-etching process employing argon gas at an etching amount of approximately 5 nm, so that a part of the lower barrier layer deposited on the bottom surface of the via hole is at least partially deposited on the lower part of the sidewall surface of the via hole.

Novel flexible hoses are disclosed that are capable of handling high pressure fluids and providing high barrier against permeation loss. The hoses comprise (from innermost to outermost layer) a thermoplastic veneer; a tie layer; a metal-polymer laminate; a braid under-layer of a thermoplastic or thermosetting elastomer; a reinforcing braid layer; and an outer layer of an elastomeric material. The hoses are suitable for use in air conditioning, refrigeration, fuel handling, hydraulic and similar systems requiring the transport of high pressure fluids.

This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a mixture thereof; and a step of lowering a temperature at a rate of 2° C. / min or less in a nitrogen-gas-containing ambient atmosphere in a portion or all of a process of lowering a temperature to a wafer removal temperature following said high-temperature heat treatment. This silicon wafer has a defect-free layer which is formed by a high-temperature heat treatment and is included in a surface thereof, wherein an average iron concentration in said surface is 1×1010 atoms / cm3 or less.

Novel methods for circulation of refrigerants within closed loop systems and using flexible hoses are disclosed that are capable of handling high pressure fluids and providing high barrier against permeation loss. The hoses comprise (from innermost to outermost layer) a thermoplastic veneer; a tie layer; a metal-polymer laminate; a braid under-layer of a thermoplastic or thermosetting elastomer; a reinforcing braid layer; and an outer layer of an elastomeric material.

A Chemical Mechanical Polishing (CMP) method includes providing a semiconductor substrate having an overlying dielectric layer, performing a first grinding on the dielectric layer, wherein the first grinding produces organic residues on a surface of the dielectric layer after the first grinding. The method further includes performing a second grinding on the dielectric layer by using an alkaline solution to remove the organic residues on the surface of the dielectric layer. The organic residues remaining on the surface of the dielectric layer are removed by using the alkaline solution after the first grinding process is performed. The method additionally includes cleaning a grinding pad and the substrate using deionized water.

A semiconductor device includes an N-channel transistor having an N-type gate electrode and a P-channel transistor having a P-type gate electrode which are formed on a semiconductor substrate. The P-type gate electrode includes a first silicon layer formed as the lowest layer, and doped with a P-type impurity; a second silicon layer formed on the first silicon layer; and a metal containing layer formed on the second silicon layer. The N-type gate electrode includes a third silicon layer formed as the lowest layer and doped with an N-type impurity; a fourth silicon layer formed on the third silicon layer; and a metal containing layer formed on the fourth silicon layer. At least one of the second silicon layer and the fourth silicon layer is doped with no impurity or an impurity of a conductive type opposite to that of the impurity in a corresponding one of the first silicon layer and third silicon layer.

Provided is a pneumatic tire including a belt layer. When the tread region indicates a region corresponding to a belt width of the belt layer and the side region indicates a region inward of a tire radial direction with respect to a tire maximum width position, the carcass cords forming the carcass layer are inclined with respect to the tire radial direction in the tread region, and at the same time, extend along the tire radial direction in the side region. The carcass cords forming the carcass layer and belt cords forming the belt layer cross with each other in the tread region.

Methods and apparatuses for making improved carpet are disclosed comprising the use of plasma discharge units to treat carpet backing surfaces to improve the adhesion of carpet backing layers, the adhesion of carpet backing to the carpet segments and to improve the adhesion of the exterior of the carpet backing to surfaces to which the carpet is applied.