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37results about How to "No improvement is obtained" patented technology

Speech data retrieving and presenting device

A speech data retrieving and presenting device applied with an electronic device through a network includes a data receiving unit, a processing unit and a speech presenting unit. The data receiving unit connected to the network receives data of the electronic device through the network. The processing unit coupled to the data receiving unit receives speech data and retrieves a speech presenting signal from the speech data. The speech presenting unit coupled to the processing unit receives the speech presenting signal and outputs a speech according to the speech data. This device can assist a user to obtain network information, and provide the user a more flexible application according to the property that the device can be operated independently by a simple motion.
Owner:MICROTIME COMP

Semiconductor substrate made of group III nitride, and process for manufacture thereof

To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of: forming a GaN layer 2 on a sapphire substrate 1 of the C face ((0001) face); forming a titanium film 3 thereon; heat-treating the substrate in an atmosphere containing hydrogen gas or a gas of a compound containing hydrogen to form voids in the GaN layer 2; and thereafter forming a GaN layer 4 on the GaN layer 2'.
Owner:SUMITOMO CHEM CO LTD

Semiconductor device and manufacturing method thereof

ActiveUS20100109114A1No improvement is obtainedNumber of manufacturing step of manufacturing is increasedSemiconductor/solid-state device detailsSolid-state devicesEngineeringSoi substrate
A semiconductor device manufacturing method includes etching a silicon on insulator (SOI) from its surface (i.e., semiconductor substrate layer) to form a first trench and a second trench. The first trench extends through the SOI substrate and reaches an electrode pad. The second trench terminates in the semiconductor substrate layer. The manufacturing method also includes forming an insulation film that covers the surface of the semiconductor substrate layer as well as the side walls and bottoms of the first and second trenches. The manufacturing method also includes removing the insulation film from the bottoms of the first and second trenches to expose the electrode pad from the first trench bottom and to expose the semiconductor substrate layer from the second trench bottom. The manufacturing method also includes forming a conductive film that covers the semiconductor substrate layer and the side walls and the bottoms of the first and second trenches to form a through via electrically connected to the electrode pad at the first trench bottom and to form a contact part electrically connected to the semiconductor substrate layer at the second trench bottom. The manufacturing method also includes patterning the conductive film on the semiconductor substrate layer to form the external electrodes and to form a potential fixing external electrode electrically connected to the contact part.
Owner:LAPIS SEMICON CO LTD

Method of Isolation of Nucleic Acids

ActiveUS20110124851A1Improve isolation processLimit maximum volumeSugar derivativesMicrobiological testing/measurementSolid phasesIsolation procedures
Owner:OMEGA BIO TEK

Self-adhering powder paint based on polyamide and silane for metal coating

The invention concerns to the use of a powder comprising 99.95 to 95% of at least one polyamide and 0.05 to 5% of at least one silane for coating metals. This powder may be prepared by simple dry blending of the constituents. The silane can also be added to the molten polyamide in a mixing device and the resulting product reduced to powder. The addition of silane makes it possible to significantly improve electrostatic application by preventing a substantial portion of the powder from falling off during the electrostatic discharge which follows application, while providing lasting adhesion between the coating and metal. Advantageously, the silane is chosen from aminopropyltriethoxysilane and aminopropyltrimethoxysilane. The invention also concerns a method of coating an object with a film resulting from melting a thin layer of the powder.
Owner:ARKEMA FRANCE SA
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