The invention relates to a silicon-based single-junction gallium indium nitride solar cell which comprises a back electrode (11), a silicon substrate (1), a seed crystal layer (2), a buffer layer (3), an n-type doped GaN buffer layer (4), an InaGal-aN layer (5), an unintentional doped InbGal-bN layer (6), a p-type doped IncGal-cN layer (7), a window layer (8), a positive electrode (9) and an anti-reflection conductive film (10) which are arranged from bottom to top, wherein the silicon substrate and the InaGal-aN layer is are an n-type doped structure, the seed crystal layer and the buffer layer are made of ZnO material, the window layer is made of p-type heavily doped GaN, and the anti-reflection conductive film covers areas of the window layer other than the positive electrode. The solar cell can quite effectively solve the problems of lattice matching, thermal expansion coefficient matching and the like encountered when a GaN film extends from the silicon substrate, and has the advantages of low manufacturing cost, high sunlight absorbability and the like.