The invention provides a nonvolatile memory. The nonvolatile memory is provided with a storage unit, wherein the storage unit is provided with a stack structure, a first floating gate, a second floating gate, erase gate dielectric layers, auxiliary gate dielectric layers, a first doping region, a second doping region, a first control gate and a second gate, wherein the stack structure comprises a gate dielectric layer, an auxiliary gate, an insulation layer and an erase gate which are sequentially arranged, the first floating gate and the second floating gate are respectively arranged on side walls of two sides of the stack structure, the erase gate dielectric layers are arranged between the erase gate and the first floating grid and between the erase gate and the second floating grid, the auxiliary gate dielectric layers are arranged between the auxiliary gate and the first floating gate and between the auxiliary gate and the second floating gate, the first doping region and the second doping region are respectively arranged at two sides of the stack structure, the first floating gate and the second floating gate, and the first control gate and the second gate are respectively arranged on the first floating gate and the second floating gate. By the nonvolatile memory, low-voltage operation can be performed, and the reliability of a semiconductor component is further improved.