38results about How to "Improve lithography efficiency" patented technology

The invention provides a synchronous control system of a step scanning photoetching machine based on a VME (Virtual Mobile Engine) bus and a synchronous control method thereof, which are to solve problems of large synchronization error and low photoetching efficiency in the exposure process of the step scanning photoetching machine. According to the invention, an upper machine is connected with a lower machine by an Ethernet; a synchronous control module is connected with the lower machine by a VME64 standard bus; the synchronous control module is connected with a laser counting module and a motion control module by VME64 user-defined protocol buses; a network port of the synchronous control module is connected with a network port of the lower machine by a network wire; and the VME bus comprises VME64 user-defined protocol buses and a VME64 standard bus. According to the invention, purposes of controlling and reducing the synchronization error in the step scanning process and increasing the photoetching efficiency are achieved. The synchronous control system and the synchronous control method, provided by the invention, are suitable for the field of scanning photoetching machines.

The invention provides an immersed ultraviolet optical system, which is used for forming an image of an object plane into an image plane. The immersed ultraviolet optical system comprises a first unit, a second unit, a third unit, a fourth unit and a fifth unit in the direction of an optical axis of the system. The first unit group L1 with positive refractive power, the second unit group L2 with positive refractive power, the third unit group L3 with positive refractive power, the fourth unit group L4 with negative refractive power and the fifth unit group L5 with negative refractive power are orderly arranged in the incidence direction of light beams. The immersed ultraviolet optical system provided by the invention can compensate aberration better, improve imaging quality, promote system resolution and improve photoetching efficiency.

The present application discloses a light intensity distribution fast determination method and device based on mask graphics processing. The method comprises the following steps of: establishing a cross transfer function according to a light source function and a pupil function; Performing singular value decomposition on the cross transfer function to obtain at least one frequency domain kernel function; Determining at least one rectangle into which the mask pattern is divided, and characteristic information of each rectangle in the at least one rectangle; Determining a rectangular projectioncoefficient corresponding to each rectangle and a kernel function projection coefficient corresponding to each kernel function in at least one frequency domain; According to the rectangular projectioncoefficients, the kernel projection coefficients and the characteristic information of each rectangle, the light intensity distribution at the specified position of the user is determined. In the present application, the light intensity distribution is quickly determined by the kernel function projection coefficient and the rectangular projection coefficient. Due to the existence of repetitive rectangles in the rectangles divided by the mask pattern, repetitive calculation can be avoided when calculating the rectangular projection coefficients, the calculation time can be reduced, and the lithographic efficiency can be improved.

The invention relates to the technical field of micro-nanometer processing and discloses a projection photoetching system with a composite photon sieve. The system comprises a lighting system, a mask plate, the composite photon sieve and a substrate, which are sequentially arranged, wherein the lighting system is used for generating an incident light and emitting the incident light to the mask plate; the mask plate is used for providing an object space for imaging the composite photon sieve and emitting the incident light to the composite photon sieve through the mask plate; the composite photon sieve is used for realizing an imaging function and imaging a graph on the mask plate on the substrate; and the substrate is used for receiving an image, formed by the composite photon sieve, of the graph on the mask plate. The composite photon sieve projection photoetching system has the advantages that: because the composite photon sieve is adopted to replace a projection objective in the conventional projection photoetching system, the advantage of high efficiency of the conventional projection photoetching system can be reserved, quick massive photoetching is realized, photoetching efficiency is improved, cost can be effectively reduced, and the volume of the system is reduced.

The invention discloses a light intensity distribution obtaining method and device based on non-uniform calculation. The method comprises the following steps: uniformly sampling a light source function and a pupil function in a frequency domain to obtain a light source sampling matrix and a pupil sampling matrix based on an intersecting area; The non-uniform inverse Fourier transform is applied tothe sample matrix of light source and pupil to obtain the cross transfer matrix. Determining a frequency domain kernel function of the cross transfer matrix; The sampling matrix of the mask functionin frequency domain and the sampling matrix of the kernel function in frequency domain are established. According to the sampling matrix of the mask function in frequency domain and the sampling matrix of the kernel function in frequency domain, the light intensity distribution in the specified position of the user is obtained through the inverse non-uniform Fourier transform. In the present application, since the sampling method based on the intersecting area is adopted, the calculation accuracy is improved, and at the same time, the inverse non-uniform Fourier transform is adopted, and underthe same sampling density, the calculation amount of the light intensity distribution can be reduced, thereby shortening the calculation time and improving the efficiency of photoresist lithography.

The invention provides a photoetching method and a photoetching system to improve photoetching efficiency. The method comprises the following steps: judging whether photoetching process condition parameters are in a predetermined range; when the photoetching process condition parameters are in the predetermined range, performing photoetching; and when the photoetching process condition parametersare not in the predetermined range, prohibiting the photoetching. The system comprises a judging unit for judging whether the photoetching process condition parameters are in the predetermined range,a photoetching unit for performing the photoetching when the judging unit judges that the photoetching process condition parameters are in the predetermined range, and a photoetching prohibiting unitfor prohibiting the photoetching when the judging unit judges that the photoetching process condition parameters are not in the predetermined range.

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a reticle, a photolithography method and a reticle. The method for forming a reticle includes the following steps: making a test reticle including a plurality of test areas, the test area includes several sub-resolution patterns, and the sub-resolution patterns in each test area have different arrangement densities; using the test reticle to pair The test photoresist layer is exposed; after developing the test photoresist layer, a database including the corresponding relationship between the arrangement density and the residual thickness is established; the target arrangement density corresponding to the target residual thickness is selected from the database, and the Fabricate a target reticle including a plurality of sub-resolution patterns according to the target arrangement density. The invention greatly simplifies the operation of forming a photoresist layer with a specific thickness on the surface of the wafer, reduces the cost of photolithography, and improves the efficiency of photolithography.

The invention discloses a laser direct writing method based on large-area multi-step binary optical element, which comprises the following steps: processing a 2N-order step data document into a gray BMP image with gray values starting from G0=0 to G2<N>-1=2<N>-1, decomposing the gray BMP image according to exposure metering accumulation formula P=P1+P2+....Pn, Pn=2<n-1>*P1 (n<=N), expressing the exposure metering of all the 2<N>step exposure through separately or accumulatively combination, to realize the covering of the exposure metering of all the steps by maximally overlapping N exposures (P=P1+P2+....Pn) at the position area in the Y stepping direction. The exposure metering of each step is decomposed into X and Y two-dimension unit meterings which are superposed. By adopting the mode of scanning the synchronous pulse triggering exposure, on one hand, the exposure metering is accurately controlled, on the other hand, the photoetching efficiency is improved, all the data are written only once in an entirely digital manner, alignment nesting is not required, and the error probability brought in the middle links can be reduced.