38results about How to "Improve lithography efficiency" patented technology

The invention provides a fully-spherical projection objective which is used for forming an image of an object plane into an image plane. The fully-spherical projection objective, along the direction of an optical axis, comprises a first lens group, a second lens group, a third lens group, a fourth lens group and a fifth lens group; and in a sequence of the incident direction of a light beam, the first lens group G1 has a positive focal power, the second lens group G2 has a negative focal power, the third lens group G3 has the positive focal power, the fourth lens group G4 has the negative focal power, and the fifth lens group G5 has the positive focal power. All lenses in the fully-spherical projection objective are spherical lenses, not aspherical lenses. By adoption of the fully-spherical projection objective, aberration can be better compensated, imaging quality is improved, system resolution is improved, and photoetching efficiency is improved.

The present invention belongs to the field of microfine engineering manufacture technology, and is characterizedb by that a kind of array optical probe scanning photoetching process is used to make integrated circuit so as to can make mininum wire width of integrated circuit less than 0.1 micrometer, at the same time it features quick speed and high efficiency. It can greatly simplify production process of integrated circuit, and provides a new effective pathway for making super-large-scale integrated circuit.

The invention discloses a parallel photoetching write-through system which comprises a light source, a pattern generating system, an optical system, a control system, a moving system and a workpiece platform. The parallel photoetching write-through system is characterized by also being provided with a focusing servo system, the focusing servo system comprises a detection light path, a sensor and a focusing device, the optical system comprises a micro-system and a detection light path, wherein the micro-system adopts a double axifugal optical system, the detection light path comprises a detection light source, a first light splitter arranged in the double axifugal optical system and a second light splitter arranged between the detection light source and the first light splitter; detection light enters the double axifugal optical system through the first light splitter and irradiates on a workpiece of the workpiece platform; reflective light is received by the sensor through the first light splitter and the second light splitter; and the control system controls the action of the focusing device according to signals of the sensor to realize servo focusing. The invention can realize accurate photoetching of a submicron micro-structure by combining with a focusing imaging servo system.

The invention discloses a compact maskless photoetching system and an exposure method thereof, belongs to the field of maskless digital photoetching, and aims to solve the problem that ultraviolet light energy is sharply reduced due to light path folding in the prior art. According to the compact maskless photoetching system and the exposure method thereof, purple light and red light are integrated on the same plane, so that it can be ensured that the purple light and the red light form a coaxial light source; the red light is used for illumination and exposure pattern alignment; the purple light is used for exposure distribution andthe periphery of an optical axis; and thus, the problem of overlarge size of an existing maskless photoetching system caused by complex structure and excessive used elements in the existing maskless photoetching system is solved, and the problem that the photoetching efficiency of the photoetching system is low due to low light energy utilization rate caused by a complex light path is also solved.

The invention provides a synchronous control system of a step scanning photoetching machine based on a VME (Virtual Mobile Engine) bus and a synchronous control method thereof, which are to solve problems of large synchronization error and low photoetching efficiency in the exposure process of the step scanning photoetching machine. According to the invention, an upper machine is connected with a lower machine by an Ethernet; a synchronous control module is connected with the lower machine by a VME64 standard bus; the synchronous control module is connected with a laser counting module and a motion control module by VME64 user-defined protocol buses; a network port of the synchronous control module is connected with a network port of the lower machine by a network wire; and the VME bus comprises VME64 user-defined protocol buses and a VME64 standard bus. According to the invention, purposes of controlling and reducing the synchronization error in the step scanning process and increasing the photoetching efficiency are achieved. The synchronous control system and the synchronous control method, provided by the invention, are suitable for the field of scanning photoetching machines.

The invention provides an immersion lithography system and an immersion flow field maintaining method. An immersion liquid curing apparatus is arranged in an immersion head; in an exposure process, the immersion liquid between the immersion head and a silicon wafer is cured to form a sealed wall by the immersion liquid curing apparatus; the immersion head, the sealed wall and the silicon wafer form an accommodating container for accommodating the immersion liquid; the immersion liquid in the sealed wall forms a medium; the immersion liquid field of the immersion liquid is maintained between a projection objective lens and the silicon wafer; after exposure is completed, all immersion liquid in contact with the silicon wafer is cured by the immersion liquid curing apparatus, so that after the silicon wafer is removed from a working table, the immersion liquid does not fall off due to gravity; after a new non-exposed silicon wafer is loaded on the working table, the cured immersion liquid is in contact with the silicon wafer, and next, the cured immersion liquid is liquefied by the immersion liquid curing apparatus to perform exposure of the next round. Therefore, by adoption of the apparatus and the process, re-building of the liquid field after replacement of the silicon wafer is not needed, so that time is saved and lithography efficiency is improved.

The invention discloses a light intensity distribution obtaining method and device based on non-uniform calculation. The method comprises the following steps: uniformly sampling a light source function and a pupil function in a frequency domain to obtain a light source sampling matrix and a pupil sampling matrix based on an intersecting area; The non-uniform inverse Fourier transform is applied tothe sample matrix of light source and pupil to obtain the cross transfer matrix. Determining a frequency domain kernel function of the cross transfer matrix; The sampling matrix of the mask functionin frequency domain and the sampling matrix of the kernel function in frequency domain are established. According to the sampling matrix of the mask function in frequency domain and the sampling matrix of the kernel function in frequency domain, the light intensity distribution in the specified position of the user is obtained through the inverse non-uniform Fourier transform. In the present application, since the sampling method based on the intersecting area is adopted, the calculation accuracy is improved, and at the same time, the inverse non-uniform Fourier transform is adopted, and underthe same sampling density, the calculation amount of the light intensity distribution can be reduced, thereby shortening the calculation time and improving the efficiency of photoresist lithography.

The invention provides an immersed ultraviolet optical system, which is used for forming an image of an object plane into an image plane. The immersed ultraviolet optical system comprises a first unit, a second unit, a third unit, a fourth unit and a fifth unit in the direction of an optical axis of the system. The first unit group L1 with positive refractive power, the second unit group L2 with positive refractive power, the third unit group L3 with positive refractive power, the fourth unit group L4 with negative refractive power and the fifth unit group L5 with negative refractive power are orderly arranged in the incidence direction of light beams. The immersed ultraviolet optical system provided by the invention can compensate aberration better, improve imaging quality, promote system resolution and improve photoetching efficiency.

The invention provides a fully-spherical projection objective which is used for forming an image of an object plane into an image plane. The fully-spherical projection objective, along the direction of an optical axis, comprises a first lens group, a second lens group, a third lens group, a fourth lens group and a fifth lens group; and in a sequence of the incident direction of a light beam, the first lens group G1 has a positive focal power, the second lens group G2 has a negative focal power, the third lens group G3 has the positive focal power, the fourth lens group G4 has the negative focal power, and the fifth lens group G5 has the positive focal power. All lenses in the fully-spherical projection objective are spherical lenses, not aspherical lenses. By adoption of the fully-spherical projection objective, aberration can be better compensated, imaging quality is improved, system resolution is improved, and photoetching efficiency is improved.

A hybrid lithography system (10) and a hybrid lithography method. The system comprises a light source (11), a light beam shaper (12), a light-field modulator (13), a reflector (14), an imaging optical system and a phase device (15), wherein the beam shaper (12) is used for shaping light beams emitted by the light source (11). the light-field modulator (13) is used for generating pattern light with the shaped light beams; the imaging optical system and the reflector (14) are used for transferring a light field to the surface of a lithographic member (101) to be exposed, so as to realize direct writing lithography; and the phase device (15) is used for forming an interference exposure field on the surface of the lithographic member (101), so as to realize interference lithography. The hybrid lithography system (10) has two functions of direct writing lithography and interference lithography, and can perform hybrid lithography, thereby improving the nanometre lithography efficiency and having great significance in promoting the application of devices and materials related to micro-nano structures.

The present application discloses a light intensity distribution fast determination method and device based on mask graphics processing. The method comprises the following steps of: establishing a cross transfer function according to a light source function and a pupil function; Performing singular value decomposition on the cross transfer function to obtain at least one frequency domain kernel function; Determining at least one rectangle into which the mask pattern is divided, and characteristic information of each rectangle in the at least one rectangle; Determining a rectangular projectioncoefficient corresponding to each rectangle and a kernel function projection coefficient corresponding to each kernel function in at least one frequency domain; According to the rectangular projectioncoefficients, the kernel projection coefficients and the characteristic information of each rectangle, the light intensity distribution at the specified position of the user is determined. In the present application, the light intensity distribution is quickly determined by the kernel function projection coefficient and the rectangular projection coefficient. Due to the existence of repetitive rectangles in the rectangles divided by the mask pattern, repetitive calculation can be avoided when calculating the rectangular projection coefficients, the calculation time can be reduced, and the lithographic efficiency can be improved.

The invention relates to the technical field of micro-nanometer processing and discloses a projection photoetching system with a composite photon sieve. The system comprises a lighting system, a mask plate, the composite photon sieve and a substrate, which are sequentially arranged, wherein the lighting system is used for generating an incident light and emitting the incident light to the mask plate; the mask plate is used for providing an object space for imaging the composite photon sieve and emitting the incident light to the composite photon sieve through the mask plate; the composite photon sieve is used for realizing an imaging function and imaging a graph on the mask plate on the substrate; and the substrate is used for receiving an image, formed by the composite photon sieve, of the graph on the mask plate. The composite photon sieve projection photoetching system has the advantages that: because the composite photon sieve is adopted to replace a projection objective in the conventional projection photoetching system, the advantage of high efficiency of the conventional projection photoetching system can be reserved, quick massive photoetching is realized, photoetching efficiency is improved, cost can be effectively reduced, and the volume of the system is reduced.

The invention discloses a light intensity distribution obtaining method and device based on non-uniform calculation. The method comprises the following steps: uniformly sampling a light source function and a pupil function in a frequency domain to obtain a light source sampling matrix and a pupil sampling matrix based on an intersecting area; The non-uniform inverse Fourier transform is applied tothe sample matrix of light source and pupil to obtain the cross transfer matrix. Determining a frequency domain kernel function of the cross transfer matrix; The sampling matrix of the mask functionin frequency domain and the sampling matrix of the kernel function in frequency domain are established. According to the sampling matrix of the mask function in frequency domain and the sampling matrix of the kernel function in frequency domain, the light intensity distribution in the specified position of the user is obtained through the inverse non-uniform Fourier transform. In the present application, since the sampling method based on the intersecting area is adopted, the calculation accuracy is improved, and at the same time, the inverse non-uniform Fourier transform is adopted, and underthe same sampling density, the calculation amount of the light intensity distribution can be reduced, thereby shortening the calculation time and improving the efficiency of photoresist lithography.

The invention discloses a microlens mask and a preparation method thereof, belonging to the technical field of nanophotonic devices. The method comprises: assembling a single-layer polystyrene microsphere on a substrate to form a first sample; coating the first sample with Cloth the first colloid, etch the first colloid to expose part of the polystyrene microspheres to form a second sample; remove the polystyrene microspheres on the second sample to obtain a spherical cavity mold; fill the second sample in the spherical cavity mold The photoresist is shaped and exposed to cure the second photoresist; the second photoresist and the spherical cavity mold are separated to obtain a reusable microlens mask. The microlens reticle prepared by the invention can be repeatedly used in large-area assisted lithography micro-nano patterns, and has low cost, short period and high efficiency.

The invention provides a photoetching method and a photoetching system to improve photoetching efficiency. The method comprises the following steps: judging whether photoetching process condition parameters are in a predetermined range; when the photoetching process condition parameters are in the predetermined range, performing photoetching; and when the photoetching process condition parametersare not in the predetermined range, prohibiting the photoetching. The system comprises a judging unit for judging whether the photoetching process condition parameters are in the predetermined range,a photoetching unit for performing the photoetching when the judging unit judges that the photoetching process condition parameters are in the predetermined range, and a photoetching prohibiting unitfor prohibiting the photoetching when the judging unit judges that the photoetching process condition parameters are not in the predetermined range.

The invention provides a single-sided digital photoetching system. The single-sided digital photoetching system comprises a first platform, a second platform, a photoetching main body positioned between the first platform and the second platform, target point cameras arranged on two sides of the photoetching main body, and a transmission assembly for bearing the first platform and the second platform, the first platform and the second platform are both used for bearing a to-be-photoetched circuit board, the to-be-photoetched circuit board comprises a to-be-photoetched surface, and the transmission assembly is used for driving the first platform or the second platform to move towards the photoetched main body; and the target point camera is used for acquiring image information of a to-be-photoetched surface of the to-be-photoetched circuit board, so that the photoetching main body alternately performs digital photoetching treatment on the to-be-photoetched surface of the to-be-photoetched circuit board on the first platform and the second platform according to the image information. According to the single-sided digital photoetching system provided by the invention, the photoetching efficiency is improved, and the photoetching precision is improved.

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a reticle, a photolithography method and a reticle. The method for forming a reticle includes the following steps: making a test reticle including a plurality of test areas, the test area includes several sub-resolution patterns, and the sub-resolution patterns in each test area have different arrangement densities; using the test reticle to pair The test photoresist layer is exposed; after developing the test photoresist layer, a database including the corresponding relationship between the arrangement density and the residual thickness is established; the target arrangement density corresponding to the target residual thickness is selected from the database, and the Fabricate a target reticle including a plurality of sub-resolution patterns according to the target arrangement density. The invention greatly simplifies the operation of forming a photoresist layer with a specific thickness on the surface of the wafer, reduces the cost of photolithography, and improves the efficiency of photolithography.

The invention discloses a method for reducing interference vibration, which includes steps of performing first isolation on interference vibration by a vibration isolator, and performing a secondary isolation on the disturbance vibration from the vibration isolator by adopting a damper. The method of reducing the interference vibration adopts two vibration reducing methods, thus the vibration reducing effect is improved. The invention further discloses an absorber, which is arranged between a substrate of the device and a machine load; the absorber can reduce the influence of the interferencevibration on the device and further eliminate the target position change of the machine load in relative the external world under the heavy load compression for a long time. The invention further discloses a photoetching machine applying the absorber. After adopting the absorber, the stability of the photoetching machine is improved.

The invention discloses a laser direct writing method based on large-area multi-step binary optical element, which comprises the following steps: processing a 2N-order step data document into a gray BMP image with gray values starting from G0=0 to G2<N>-1=2<N>-1, decomposing the gray BMP image according to exposure metering accumulation formula P=P1+P2+....Pn, Pn=2<n-1>*P1 (n<=N), expressing the exposure metering of all the 2<N>step exposure through separately or accumulatively combination, to realize the covering of the exposure metering of all the steps by maximally overlapping N exposures (P=P1+P2+....Pn) at the position area in the Y stepping direction. The exposure metering of each step is decomposed into X and Y two-dimension unit meterings which are superposed. By adopting the mode of scanning the synchronous pulse triggering exposure, on one hand, the exposure metering is accurately controlled, on the other hand, the photoetching efficiency is improved, all the data are written only once in an entirely digital manner, alignment nesting is not required, and the error probability brought in the middle links can be reduced.

The invention provides a photoetching method of a superfine structure. The photoetching method comprises the steps that: a structure material layer and a first hard mask material layer are formed on a substrate; a first photoetching is carried out for forming a first hard mask pattern; a second hard mask material layer is formed on the first hard mask pattern; and a second photoetching is carriedout for forming a second hard mask pattern, wherein light sources of the first photoetching and the second photoetching are different and are selected from either an i line mercury arc lamp or an electron beam exposure system. According to the photoetching method of the superfine structure provided by the invention, the traditional optical photoetching technology and the electronic beam photoetching technology are combined for use, the electronic beam exposure is used for realizing the superfine pattern manufacture, and the optical photoetching is used for completing other patterns, so the manufacture problem of the superfine pattern can be effectively solved, and the efficiency is not reduced.