Photoetching method and system

Abstract

The invention provides a photoetching method and a photoetching system to improve photoetching efficiency. The method comprises the following steps: judging whether photoetching process condition parameters are in a predetermined range; when the photoetching process condition parameters are in the predetermined range, performing photoetching; and when the photoetching process condition parametersare not in the predetermined range, prohibiting the photoetching. The system comprises a judging unit for judging whether the photoetching process condition parameters are in the predetermined range,a photoetching unit for performing the photoetching when the judging unit judges that the photoetching process condition parameters are in the predetermined range, and a photoetching prohibiting unitfor prohibiting the photoetching when the judging unit judges that the photoetching process condition parameters are not in the predetermined range.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a photolithography method and system. Background technique [0002] The integrated circuit manufacturing process includes processes such as photolithography. In lithography, photolithography is usually carried out on the lithography product according to the lithography process condition parameters, and the lithography process condition parameters can affect the lithography result. The lithography process parameters generally include: exposure energy (Energy), used to control the product feature size; focus plane (Focus), used to control the cross-sectional shape of the product feature size; alignment model parameters (OVL, Overlap), used to Control the degree of alignment between the product and the front layer; and the numerical aperture (NA, Numerical Aperture) of the exposure machine and the aperture factor (Sigma) of the exposure machine. [0003] At present,...

AI Technical Summary

Problems solved by technology

[0004] However, since the APC method cannot identify whether the existing lithography results are abnormal, when the existing lithography results are abnormal, the corresponding lithography process condition parameters will be controlled and adjusted according to the abnormal lithography results

Since the lithography process condition parameters are controlled and adjusted according to the abnormal lithography results, there may also be abnormalities in the lithography process condition parameters, which will affect the subsequent lithography results and reduce the lithography efficiency.

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