Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laser direct writing method based on large-area multi-step binary optical element

A binary optical element, laser direct writing technology, applied in microlithography exposure equipment, diffraction grating, photolithography process exposure device and other directions, can solve the problem of high precision, large area, multi-step binary optical exposure efficiency has no advantages problems, to achieve the effect of precise control of exposure metering, reduction of error probability, and improvement of lithography efficiency

Active Publication Date: 2017-01-25
SVG TECH GRP CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned methods that have been publicly reported have no advantages in the actual preparation of high-precision, large-area, multi-step binary optics and exposure efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser direct writing method based on large-area multi-step binary optical element
  • Laser direct writing method based on large-area multi-step binary optical element
  • Laser direct writing method based on large-area multi-step binary optical element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.

[0039]The invention discloses a laser direct writing method based on a large-area multi-step binary optical element, including:

[0040] S1, will 2 N The sub-step data files are processed into gray values ​​from G0=0 to G2 N -1=2 N A grayscale BMP image ending with -1, where 0 means no steps to be etched, 2 N -1 means the step with the deepest etching depth;

[0041] S2. According to the cumulative formula of exposure measurement P=P1+P2+...+Pn, Pn=2 n-1 *P1(nN Exposure metering required for sub-step exposure, and grayscale BMP images are divided into binary BMP bitmap queues B1 to Bm of several L...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a laser direct writing method based on large-area multi-step binary optical element, which comprises the following steps: processing a 2N-order step data document into a gray BMP image with gray values starting from G0=0 to G2<N>-1=2<N>-1, decomposing the gray BMP image according to exposure metering accumulation formula P=P1+P2+....Pn, Pn=2<n-1>*P1 (n<=N), expressing the exposure metering of all the 2<N>step exposure through separately or accumulatively combination, to realize the covering of the exposure metering of all the steps by maximally overlapping N exposures (P=P1+P2+....Pn) at the position area in the Y stepping direction. The exposure metering of each step is decomposed into X and Y two-dimension unit meterings which are superposed. By adopting the mode of scanning the synchronous pulse triggering exposure, on one hand, the exposure metering is accurately controlled, on the other hand, the photoetching efficiency is improved, all the data are written only once in an entirely digital manner, alignment nesting is not required, and the error probability brought in the middle links can be reduced.

Description

technical field [0001] The invention relates to the technical field of multi-step microstructure preparation, in particular to a laser direct writing method based on a large-area multi-step binary optical element. Background technique [0002] Based on the diffraction theory of light waves, binary optical devices use computer-aided design to etch relief structures with two or more step depths on the substrate or the surface of traditional optical devices, forming pure phase, coaxial reproduction, and extremely high diffraction A class of diffractive optical elements with high efficiency. Generally, the two-step binary optical element has symmetrical positive and negative first-order diffracted light, and the theoretical efficiency of the first-order diffracted light is 40.5%. The theoretical diffraction efficiency of more than 4 multi-step binary optical elements is 81%. The theoretical diffraction efficiency of the meta-optical element is 96%. Binary optical elements have...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G02B5/18
Inventor 朱鹏飞陈林森张瑾杨颖浦东林朱鸣袁晓峰
Owner SVG TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products