36results about How to "Improve failure rate" patented technology

Apparatus are provided for robust power take off (PTO) and / or cruise enable. The apparatus includes a control module for PTO enable having a first input connected to one of a first reference voltage and a second reference voltage, and a second input connected to one of the first reference voltage and the second reference voltage. An inverse reference voltage operator is connected to both of the inputs and configured such that the second input is connected to the second reference voltage when the first input is connected to the first reference voltage and the second input is connected to the first reference voltage when the first input is connected to the second reference voltage. Based on the received voltage at the first and second inputs, the control module enables / disables PTO and / or cruise.

The invention provides a multi-stage ammonia storage type solid ammonia to remove NO x The system includes an ammonia storage-exhaust unit, an ammonia transfer unit and a catalytic reactor; the flue gas is divided into two paths, one of which enters the ammonia storage-exhaust unit and then is discharged and the other merges into the catalytic reactor; the ammonia storage-exhaust unit The ammonia gas inlet and outlet are arranged on the top, and the ammonia gas outlet is connected to the ammonia transfer unit through the ammonia pipe; the ammonia transfer unit is connected to the catalytic reactor through the ammonia valve and the nozzle at the outlet of the ammonia transfer unit. The ammonia storage-exhaust unit of the present invention plays the main role of ammonia supply and ammonia volume early warning, and the ammonia transfer unit plays the role of low-temperature start-up; when the locomotive is started, the ammonia transfer unit and the catalytic reactor are connected to realize NO removal x Low-temperature start-up of the system; by raising the temperature of the ammonia storage-exhaust unit to the threshold temperature, the ammonia storage-exhaust unit and the catalytic reactor are connected to achieve stable ammonia supply during operation; the multi-halide composite adsorbent is used as the ammonia storage ‑The reactive material of the ammonia exhaust unit, when the amount of ammonia is insufficient, it can realize the early warning function of ammonia amount through multi-stage reaction switching.

The invention discloses a dual-channel transmitting assembly for a phased array antenna of a carrier rocket relay user terminal, which includes a first channel radio frequency circuit and a second channel radio frequency circuit; the first channel radio frequency circuit includes: a sequentially connected second channel radio frequency circuit A digitally controlled phase shifter for one channel, a driving amplifier for the first channel, a power amplifier for the first channel, a microstrip directional coupler for the first channel, a single-section isolator for the first channel, and a first channel connected to the microstrip directional coupler for the first channel channel detection diode; the second channel radio frequency circuit includes: a second channel digitally controlled phase shifter, a second channel drive amplifier, a second channel power amplifier, a second channel microstrip directional coupler, a second channel A single-section isolator, and a second-channel detection diode connected to the second-channel microstrip directional coupler. Compared with the single-channel phase-shifting transmitting assembly, the present invention has a compact structure, which is beneficial to reducing the front area of ​​the phased array antenna and reducing the weight of the whole machine of the phased array antenna.

The invention relates to the manufacture method of gas-sensitive elements, and provides a micromachining method of a gas-sensitive element with a gas-exchanging forcing cold-heat pump. With the method provided by the invention, a problem of exhausted areas easily appeared around sensitive elements is solved, linearity and performance of the gas-sensitive element is improved, and a calibration period of the gas-sensitive element is prolonged. The method comprises the following steps: deposing to obtain an aluminum film, replicating a cold-heat pump figure, manufacturing an aluminum oxide (Al2O3) film, heat treating, metallizing, and fixing by bonding. With the gas-sensitive element manufactured with the method, gas exchanging is forced between exhaust gas discharged from an element internal detection process and extraneous new gas requiring detection. A gas exchanging circulation is formed in a gas chamber of the gas-sensitive element, and validity and reliability is ensured in gas-sensitive element detection. Meanwhile, failures of the sensitive element due to coking are reduced. The invention assists in the selection and application of detecting monitors.

The application discloses a power acceleration control system for an electric vehicle, including a motor, a motor speed sensor, a controller, a gearbox, a handle and a P-speed switch; the motor speed sensor signal is output to the controller, and the controller The motor speed is detected from time to time. When the motor speed is lower than 2500 rpm, the controller will output an alarm to prompt the driver to switch to a low mechanical gear; The P-gear signal is output to the controller, and the controller applies reverse resistance to the motor to assist the mechanical brake to smoothly pass through the steep slope section; it solves the high failure rate of the motor caused by the slope in the prior art when the electric vehicle is used in the mountainous area, which is easy to occur. The technical problems of brake failure and poor reliability of electric vehicles; the technical effects of low motor failure rate, reliable braking and high safety when electric vehicles are used in mountainous areas are realized.

The invention provides a method for improving a breakdown voltage of a gate oxide layer of a groove-type VDMOS device. The method comprises the following steps of providing a silicon substrate with an epitaxial layer; forming an initial oxide layer on the epitaxial layer of the silicon substrate; photoetching and etching so as to form an active region pattern on the initial oxide layer; injecting ions, and forming an active region in the epitaxial layer below the active region pattern; photoetching, sequentially performing wet etching and dry etching, and forming a loop region pattern and a grid pattern on the initial oxide layer, wherein the initial oxide layer is reserved above the loop region pattern and the grid pattern; injecting ions, and forming a loop region in the epitaxial layer below the loop region pattern; forming a gate above the grid pattern. The method is capable of effectively protecting the surface of the epitaxial layer below the gate oxide layer from being damaged by processes such as etching and injection, thus obviously improving the breakdown voltage of the gate oxide layer and effectively improving an IGSS failure ratio.