Method for improving breakdown voltage of gate oxide layer of groove-type VDMOS device
A gate oxide layer and oxide layer technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as lower breakdown voltage, lower gate oxide layer quality, and inability to perform selective etching, etc., to achieve The effect of increasing the breakdown voltage
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[0029] A method for improving the breakdown voltage of the gate oxide layer of the trench type VDMOS device of the present invention may comprise the steps of:
[0030] Step 1, providing a silicon substrate with an epitaxial layer;
[0031] Specific as figure 1 As shown, the silicon substrate with an epitaxial layer can be a conventional epitaxial wafer in this field, and an epitaxial layer 2 can also be grown on a silicon substrate 1 by a conventional method in this field; An N-type epitaxial layer 2 is formed on one side surface of the silicon substrate 1 .
[0032] Step 2, forming an initial oxide layer on the epitaxial layer of the silicon substrate;
[0033] Specifically, the epitaxial layer 2 of the silicon substrate 1 can be formed by wet oxidation with a thickness of The initial oxide layer 3; in this embodiment, the thickness of the formed initial oxide layer 3 can be The temperature of wet oxidation may be 950°C.
[0034] Step 3, photolithography and etching, ...
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