38results about How to "High amplification gain" patented technology

An exposure apparatus has a laser device that is small, easy to maintain, and capable of producing an output that is unlikely to be affected by optical surges occurring in the beginning of operation. A single-wavelength laser oscillator (11) supplies a laser beam (LB1) to a fiber optic amplifier (13) through an optical modulator (12). The amplified laser beam is split by splitters (14, 16-1 to 16-m), amplified by optical amplifier units (18-1 to 18-n) and supplied through a fiber bundle (19) to a wavelength converter (20), which in turn converts the split beams into ultraviolet laser radiation (LB5) for use as exposure light. The optical modulator (12) outputs light pulses during the generation of ultraviolet light. The optical modulator (12) also produces laser radiation during the absence of ultraviolet light, but the laser radiation has substantially the same average output and a considerably low peak compared with that during the generation of ultraviolet light.

An instrument for fluorometric assays in liquid samples is disclosed. The instrument may include multiple optical channels for monitoring a first fluorophore associated with a target analyte and a second fluorophore associated with a control. The disclosed instrument finds utility in any number of applications, including microfluidic molecular biological assays based on PCR amplification of target nucleic acids and fluorometric assays in general.

The present invention provides, in at least one embodiment, a scheme which is effective in suppressing detrimental coherence effects such as random backscatter. In a fiber laser having a master oscillator power amplifier design, inserting a decorrelator in between the master oscillator and a first power amplifier or inserting a decorrelator in between the first power amplifier and a second power amplifier to reduce random backscatter, which allows for much more energy to be stored and higher gain without the risk of catastrophic optical damage, thus increasing the peak power that can be delivered as useful laser power. Backscattering can be further reduced by having the master oscillator depolarized, injection locked, and spectrally broadened to reduce the coherence length of the master oscillator.

A sense amplifier circuit includes a current sense amplifier, a voltage sense amplifier, and an output stabilizing circuit. The current sense amplifier amplifies differential input currents to generate differential output voltages and provides the differential output voltages to a sense amplifier output line pair. The voltage sense amplifier is coupled to the sense amplifier output line pair to amplify the differential output voltages on the sense amplifier output line pair. The voltage sense amplifier is activated at the time later than a time of activation of the current sense amplifier. The output stabilizing circuit is coupled to the sense amplifier output line pair to stabilize the differential output voltages on the sense amplifier output line pair. The output stabilizing circuit has a positive input resistance. Accordingly, the sense amplifier circuit reduces power consumption and an occupied area on a semiconductor chip.

A broadband light source is disclosed. The broadband light source includes a semiconductor optical amplifier for generating and amplifying light of a broadband wavelength, the amplifier having a first end and a second end and a mirror spaced from the second end of the semiconductor optical amplifier to reflect the light, which is provided by the semiconductor optical amplifier, back to the semiconductor optical amplifier, wherein the semiconductor optical amplifier amplifies the light reflected from the mirror and outputs the amplified light to the first end of the semiconductor optical amplifier. The light source further including at least one lens system to converge light passing through the amplifier ends.

A super Gaussian pulse generation method on the basis of gain reshaping includes the following steps: firstly, a wideband linear chirp laser pulse is generated, and the central wavelength of the wideband linear chirp laser pulse is adjusted to be longer than the intrinsic emission line peak wavelength of the doped gain ion of an optical fiber amplifier; secondly, the gain-narrowed lower triangular chirp laser pulse is obtained after the linear chirp laser pulse is gain amplified by a pre-amplifier selected with the gain coefficient spectral lines all presenting triangular shapes; finally, the super Gaussian pulse is formed by injecting the lower triangular chirp pulse into a main amplifier selected with the gain optical fiber length being 1 to 3 times of that of the pre-amplifier and the central wavelength of the gain spectrum lines being longer than the pre-amplifier. The device capable of realizing the method comprises an optical fiber femtosecond laser oscillator (9-1), a dispersion compensator (9-2), an optical fiber self-similarity pulse amplifier (9-3), a positive dispersion optical fiber pulse stretcher (9-4), a frequency spectrum filter (10), and a front optical fiber amplifier (11) with at least one stage and a main optical fiber amplifier (12).

The invention discloses a self-excitation eliminating method of a high gain public address system based on space counteracting. Voice signals of amplified frequency components are respectively weighted and then output from a two-path sound box loudspeaker so that two-path output signals mutually cancel out at a microphone. Thus, a microphone loop has extremely high amplification gain by a method of inhibiting the voice output from a sound box from being feeding back to the microphone. On one hand, the method leads the two-path self-excitation signals are voluntarily cancelled out, is dependent of objective signals and does not treat the object signals, and additional inhibition signals are not generated at the same time; and on the other hand, the method cause the signals resulting in squeal to be voluntarily eliminated rather than being filtered from the objective signals, thereby radically solving the self-excitation problem of the microphone.

An arrangement and method provide an optical thulium doped fiber amplifier utilizing a dual wavelength pumping scheme for amplifying an optical signal. The method includes the steps of: a first deposition (a) of energy into the fiber amplifier by pumping with radiation of a first wavelength; and a second deposition (b) of energy into the fiber amplifier by pumping with radiation of a second wavelength. The radiation of the first wavelength is arranged to induce, by single photon absorption, a population to the 3H4 level of the thulium dopant, and the radiation of the second wavelength primarily depopulates the 3F4 level, by excited absorption of a single photon, preferably by strong excited state absorption to the 3F2 level. The steps gives a population inversion between the 3H4 and the 3F4 levels and facilitate a power efficient high gain amplification.

The invention discloses a process for preparing a parasitic NPN transistor and a structure thereof, wherein the structure of the NPN transistor is changed through implanting N type foreign mater through adopting the light doping technique ion implantation in a base region window of a NPN transistor, which is equal to that a longitudinal PNP transistor is generated in the structure, thereby the improvement of the amplification gain of the parasitic NPN transistor can be realized without affecting the performances of other devices in a BCD / BICOM device. In the method, the step for implanting the N type foreign matter by the ion implantation comprises two processes for implanting ion, namely a process for implanting P type foreign matter through adopting the ion implantation with the light doping technique, and a process for implanting N type foreign matter through adopting the ion implantation with the large-angle technique.

A broadband light source is disclosed. The broadband light source includes a semiconductor optical amplifier for generating and amplifying light of a broadband wavelength, the amplifier having a first end and a second end and a mirror spaced from the second end of the semiconductor optical amplifier to reflect the light, which is provided by the semiconductor optical amplifier, back to the semiconductor optical amplifier, wherein the semiconductor optical amplifier amplifies the light reflected from the mirror and outputs the amplified light to the first end of the semiconductor optical amplifier. The light source further including at least one lens system to converge light passing through the amplifier ends.

The invention relates to a high-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification. A semiconductor diode pumping source is joined with a first lens; the first lens is joined with a second lens; the second lens is joined with a first plane mirror; the first plane mirror is joined with a laser crystal; the laser crystal is joined with a third lens; the third lens is joined with a second plane mirror; a picosecond seed source is joined with a thin film polaroid; the thin film polaroid is joined with a Faraday optical rotator; the Faraday optical rotator is joined with a sixth lens; the sixth lens is joined with a fifth lens; the fifth lens is joined with a fourth lens; and the fourth lens is joined with the first plane mirror. According to the invention, the seed laser is subjected to beam expansion and focusing by utilizing the lens combination, the overlapping of seed optical pumping lights in a crystal is realized; at the same time, the surplus pumping lights are reflected to the inner part of the crystal for reuse by utilizing the combination of the lenses and reflection mirrors; and the high-gain double-stroke traveling-wave amplifier has the advantages of high amplification gain, outstanding output facula quality, good stability and the like.

The present invention relates to an optical amplification module having a construction which effectively suppresses photodarkening, and to a laser light source including the same. The laser light source comprises a light source for outputting light to be amplified, and an optical amplification module. The optical amplification module comprises two types of optical amplification media having different rare earth element concentrations, and a pumping light source. The low concentration medium and the high concentration medium are disposed in the propagation direction of pumping light such that the population inversion of the low concentration medium is higher than that of the high concentration medium. Hence, by arranging two types of optical amplification media with different rare earth concentrations such that the population inversion of the low concentration medium is higher than that of the high concentration medium, sufficient overall gain of the laser light source can be obtained while effectively suppressing photodarkening in the two types of optical amplification media.

The invention relates to a lithium niobate doped silica fiber. The fiber is prepared by adding the high-temperature gasification lithium niobate process to the improved chemical gas-phase deposition process. The prepared lithium niobate doped silica fiber is of a fiber core layer lithium niobate doped matched type structure or an inner wrapping layer lithium niobate doped structure or a fiber coreand inner wrapping layer lithium niobate doped structure, and the lithium niobate doped silica fibers of the three structures all have high refractive index difference, low loss and high Raman gain coefficient. The fiber is used for a Raman fiber amplifier, can obtain high Raman gains, and can overcome the defect that a traditional single-mode optical fiber Raman amplifier is low in gain. Meanwhile, the preparing process is mature, and the batched production of the lithium niobate doped silica fiber can be realized.

The present invention relates to an optical amplification module having a construction which effectively suppresses photodarkening, and to a laser light source including the same. The laser light source comprises a light source for outputting light to be amplified, and an optical amplification module. The optical amplification module comprises two types of optical amplification media having different rare earth element concentrations, and a pumping light source. The low concentration medium and the high concentration medium are disposed in the propagation direction of pumping light such that the population inversion of the low concentration medium is higher than that of the high concentration medium. Hence, by arranging two types of optical amplification media with different rare earth concentrations such that the population inversion of the low concentration medium is higher than that of the high concentration medium, sufficient overall gain of the laser light source can be obtained while effectively suppressing photodarkening in the two types of optical amplification media.

The present invention relates to a difference Miller band-pass filter and a signal filtering method. The filter comprises an amplifier, a first N-channel feedback network, a second N-channel feedback network and two clock generators; the amplifier performs difference input signals and input matching through the resistance feedback to increase the voltage gain of the input signals for signal amplification, and performs difference output of the signals after filtering; the two clock generators generate periodic sampling pulse sequences and transmit the periodic sampling pulse sequences to the first N-channel feedback network and the second N-channel feedback network; and the first N-channel feedback network and the second N-channel feedback network weaken the signals out of the channels, perform center frequency regulation and conduction operation according to the sampling pulse sequences and perform filtering of the amplified signals. Compared to the prior art, the difference Miller band-pass filter and the signal filtering method can increase the signal gain, increase the 3dB bandwidth of a filter, effectively reduce the chip area and reduce the power consumption of the local oscillator branch.

The invention belongs to the field of semiconductor devices, and particularly relates to a high-sensitivity integrated semiconductor ultraviolet photoelectric detector. A reversely biased Schottky junction converts incident photons into photoelectrons. Generated photoelectrons are accumulated on an electrically suspended gate, the breakover current of a high-electron-mobility transistor is regulated and controlled, and therefore photo-induced electrons are amplified, and high detection sensitivity is achieved. Compared with a common independent ultraviolet photoelectric detector, the device provided by the invention has two advantages that a photoelectric signal is amplified by utilizing the high-electron-mobility transistor, so that the sensitivity is greatly improved; the ultraviolet photoelectric detection Schottky diode and the high-electron-mobility transistor are integrated on the same substrate, so that a multifunctional monolithic integration module can be formed, and the sizeand the cost of the system can be reduced.

The invention discloses a thin film transistor integrated amplifier, which comprises a single-ended amplifying circuit unit, and a bootstrap pull-up circuit, wherein the input amplifying circuit is used for imputing the amplifying circuit to amplify the signal received by the signal input end; and the bootstrap pull-up circuit is used for pulling up the potential of the signal output by the signaloutput end and increasing the output impedance of the bootstrap pull-up circuit so as to improve the amplifying gain of the single-ended amplifying circuit unit. The thin film transistor integrated amplifier also comprises a double-ended amplifying circuit unit, the positive / negative phase input circuit is used for amplifying positive / negative phase signals received by the positive / negative phasesignal input end; the positive / negative phase bootstrap pull-up circuit is used for pulling up the potential of the positive / negative phase output signal and increasing the output impedance of the positive / negative phase bootstrap pull-up circuit so as to improve the amplifying gain of the double-ended amplifying circuit unit. By improving the amplifying gains of the single-ended amplifying circuit unit and the double-ended amplifying circuit unit, the thin film transistor integrated amplifier has excellent performance.

The invention discloses an optical fiber hydrophone remote all-optical transmission system and a design method thereof. The optical fiber hydrophone remote all-optical transmission system comprises an optical fiber output assembly, an optical fiber hydrophone multiplexing array, a remote pump gain unit, a remote pump unit and a signal receiving demodulation assembly. The optical fiber output assembly is connected with the optical fiber hydrophone multiplexing array through an optical fiber L1, the remote pump unit is connected with the remote pump gain unit through an optical fiber L2, the optical fiber hydrophone multiplexing array is connected with the remote pump gain unit through an optical fiber L3, and the remote pump gain unit is connected with the signal receiving and demodulating assembly through an optical fiber L4. The optical fiber L1 and the optical fiber L2 are both G.654E single-mode optical fibers, and the optical fiber L3 and the optical fiber L4 are both UUL-G.652 single-mode optical fibers. The optical fiber hydrophone is applied to the field of optical fiber hydrophones, the nonlinear effect of downlink optical transmission can be reduced, the injection optical power is increased, the loss of uplink and downlink transmission links is reduced, the remote amplification gain and optical power redundancy are improved, and the phase noise of a remote transmission system is reduced.

An optical fiber amplifier having higher gain and lower noise than a prior art fiber amplifier when both amplifiers employ an equal length of gain medium-containing optical fiber and an equal intensity of pumping light. The optical fiber amplifier of the present invention comprises: a length of optical fiber containing a gain medium; a circulator, connected to one end of the optical fiber, that introduces optical signals into the optical fiber and outputs the optical signals amplified at the optical fiber to its output port; optical pumping means, for applying pumping light to the optical fiber in order to amplify the introduced optical signals; and a two-port wavelength selective coupler, disposed between the other end of the optical fiber and the optical pumping means, that passes pumping light from the optical pumping means and reflects back the amplified optical signals from the optical fiber. According to the present invention, a high-efficiency optical fiber amplifier can be manufactured with low costs. Moreover, when the fiber amplifier of the present invention is used for an optical transmitter system, system characteristics such as optical signal-to-noise ratio and system margin can be enhanced.

The invention discloses an erbium-doped fiber amplifier with controllable power control gain. The erbium-doped fiber amplifier comprises a first isolator, a first optical splitter, a first multiplexer, a first erbium-doped fiber, a second multiplexer, a second erbium-doped fiber, a second isolator, a second optical splitter, a controller, a first optical detector and a second optical detector. The erbium-doped fiber amplifier settles technical problems of high noise coefficient and low gain flatness in prior art.

The invention discloses a pre-amplification electric circuit used for an infrared alarm. The pre-amplification electric circuit used for the infrared alarm comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a first operational amplifier, a second operational amplifier, a third operational amplifier, a fourth operational amplifier and a direct-current power supply, wherein the second resistor, the third resistor, the second capacitor and the first operational amplifier form a first-level amplification circuit, the fourth resistor, the fifth resistor, the sixth resistor, the seventh resistor, the third capacitor, the fourth capacitor and the second operational amplifier form a second-level amplification circuit, and the eighth resistor, the ninth resistor, the tenth resistor, the third operational amplifier and the fourth operational amplifier form a voltage comparison circuit. The pre-amplification electric circuit used for the infrared alarm is good in low-frequency characteristic and is high in amplification gain for low-frequency weak signals output by an infrared detector. The pre-amplification electric circuit can effectively restrain noise, is high in anti-noise-interference ability, is simple in structure and uses few components.

The invention relates to a picosecond laser two-way two-stage amplification device. The device comprises a picosecond seed source, a polarizing beam splitter, a first dichronic mirror, a second dichronic mirror, and a third dichronic mirror, wherein the picosecond seed source is at an injection end of the polarizing beam splitter and is used for generating seed light and injecting the seed light into the polarizing beam splitter, the polarizing beam splitter is used for transmitting seed light parallel to the polarizing direction so as to filter seed light vertical to polarization, the first dichronic mirror is on an optical axis transmitting the seed light of the polarizing beam splitter, the mirror surface of the first dichronic mirror and the optical axis has a certain angle, the seconddichronic mirror is on an optical axis reflecting the seed light of the first dichronic mirror, and the mirror surface of the second dichronic mirror and the optical axis has a certain angle. The picosecond laser two-way two-stage amplification device uses a first laser crystal and a second laser crystal so as to perform two-stage amplification; the amplification gain can be increased by two orders of magnitude to 10<5>, so that the picosecond laser two-way two-stage amplification device has the advantages of high amplification gain, stable output power, and high-quality output spot, and theamplified picosecond laser pulse can be widely used in the field of micro-processing.

The invention provides a time amplifier. At least one D trigger is embedded in the time amplifier. If a time point when a first time pulse reaches a first D trigger after delay of a preset time interval is different from a time point when a second time pulse reaches the first D trigger, a logic signal output by the first D trigger controls and adjusts the capacitance value of a second capacitor tobe less than the capacitance value of a first capacitor, so that the amplification gains of the time amplifier are reduced; or a logic signal output by the first D trigger controls and adjusts the capacitance value of the first capacitor to be less than the capacitance value of the second capacitor, so that the amplification gains of the time amplifier are increased. Thus, the gains of the time amplifier are adjustable. The invention also provides a semiconductor memory which has the above-mentioned technical effects.

An optical radiation adapted for use in Raman amplification in a given band, is generated from a low power optical radiation with a respective bandwidth, generated by a plurality of master oscillators, such as low-power laser diodes whose output radiation is multiplexed by a multiplexer. A Raman amplification medium is provided, such as a length of optical fiber, and an additional optical radiation adapted for use in Raman amplification in said Raman amplification medium is generated. Both the low-power optical radiation and the additional optical radiation are injected into the medium so to produce, by the Raman effect induced in the medium, the output optical radiation.

The present invention relates to a semiconductor film internal cladding amplification optical fibre and its perform manufacture method. Said perform is formed from core rod, internal cladding and external cladding, the internal cladding is sandwiched between core rod and external cladding, the core rod is made up by using GeO2 doped quartz material, its refractive index is greater than that of pure quartz material of external cladding; the internal cladding is a film cladding and is made up by using active semiconductor direct band-gap material with amplification function, and the external cladding is made up by using pure quartz material. The manufacture method of perform includes the following steps: (a) adopting improved chemical gas-phase deposition process to make core rod; (b) making external cladding; (c) making film internal cladding; (d) adopting rod-inserting technique to make assembly and (e) reducing rod.

The invention relates to a high-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification. A semiconductor diode pumping source is joined with a first lens; the first lens is joined with a second lens; the second lens is joined with a first plane mirror; the first plane mirror is joined with a laser crystal; the laser crystal is joined with a third lens; the third lens is joined with a second plane mirror; a picosecond seed source is joined with a thin film polaroid; the thin film polaroid is joined with a Faraday optical rotator; the Faraday optical rotator is joined with a sixth lens; the sixth lens is joined with a fifth lens; the fifth lens is joined with a fourth lens; and the fourth lens is joined with the first plane mirror. According to the invention, the seed laser is subjected to beam expansion and focusing by utilizing the lens combination, the overlapping of seed optical pumping lights in a crystal is realized; at the same time, the surplus pumping lights are reflected to the inner part of the crystal for reuse by utilizing the combination of the lenses and reflection mirrors; and the high-gain double-stroke traveling-wave amplifier has the advantages of high amplification gain, outstanding output facula quality, good stability and the like.

The invention relates to a Raman amplification device based on a lead sulfide doped quartz optical fiber. The Raman amplification device comprises a signal source, an optical isolator A, the lead sulfide doped quartz optical fiber, a wavelength division multiplexing coupler, a high-power pump laser, an optical isolator B, an optical power meter and the like. All parts of the device are connected through quartz optical fibers, the lead sulfide doped quartz optical fibers are prepared by combining an improved chemical vapor deposition method with a lead sulfide gasification process, the preparation process is simple, and the finished optical fibers are high in Raman intensity and Raman gain coefficient. The high-power pump laser provides pump light required by the amplifying device, and thepump light and the signal light generate Raman gain in the optical fiber, so that the transmitted signal light is amplified. The device is simple in structure, safe, stable and good in amplification effect, and the cost is further reduced.

The invention discloses a trans-impedance amplifier, which comprises an amplifier and a voltage-controlled resistor connected with the amplifier, and the gain control circuit is connected with the voltage-controlled resistor and is used for controlling the voltage at the two ends of the voltage-controlled resistor to be gradually reduced along with time extension, and the amplification gain of the amplifier is gradually increased along with time extension. The device provided by the invention has the characteristics of low gain and wide range in strong echo optical current signal detection of a short-distance target (short echo time), and has the characteristics of high gain and small range in weak echo optical current signal detection of a long-distance target (long echo time); the problem that an existing logarithmic amplifier is large in noise under weak signal echoes, and consequently the signal-to-noise ratio of a system is insufficient can be solved, and the index requirements of a large dynamic range and low noise in a laser radar receiver are met.

The invention is an optical parameter amplification wavelength tuner based on periodical polarized crystal, comprising: Nd:YAG pumped light laser, BBO frequency doubling crystal, wideband signal light laser, microshifter, total reflector, lens, PPLN crystal and temperature control system, using the miroshifter adhering to the total reflector to change incident angle in the periodical polarized crystal so as to change noncollinear included angle and make wideband signal light generate optical parameter amplified outputs of different wavelengths at different angles to implement fast and continuous wavelength tuning in a larger wavelength range in infrared region. And the invention has features of method simple and convenient, wide wavelength application range, and high tuning speed.