The invention discloses a two-dimensional-arrangement double-sided staggered embedded type three-dimensional
detector and a preparation method and array thereof. The
detector comprises an upper trenchelectrode and a lower trench
electrode, wherein the upper trench
electrode and the lower trench
electrode are etched on the surface of an intermediate
semiconductor substrate; an upper central electrode is embedded in the upper groove electrode, and an upper
semiconductor substrate is filled between the upper central electrode and the upper groove electrode; a lower central electrode is embeddedin the lower groove electrode, and a lower
semiconductor substrate is filled between the lower groove electrode and the lower central electrode; the outer widths of the upper trench electrode and thelower trench electrode are 2RX; the lower trench electrode is located below the upper trench electrode, and the
vertical distance d3 is formed between the upper trench electrode and the lower trench electrode; 1 / 4 of parts of the upper trench electrode and the lower trench electrode are overlapped, and the upper central electrode and the lower central electrode are of the same specification. A
silicon dioxide layer is generated on the surface of a
chip through gettering oxidation, a
detector pattern is transferred to the
silicon dioxide layer through marking and photoetching,
etching and
chemical deposition diffusion of a
cathode electrode and an
anode electrode are carried out, and finally
damage repair and packaging are carried out.