Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

40results about How to "Closer packing" patented technology

Semiconductor device and method for manufacturing same

A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
Owner:RENESAS ELECTRONICS CORP

Waveguide grating-based wavelength selective switch actuated by micro-electromechanical system

The present invention is a wavelength-selective optical switching system. The switching system includes an input waveguide designated as waveguide WG(0) for receiving a multiplexed optical signal comprising optical signals transmitted over a plurality of wavelength channels represented by λ1, λ2, λ3, , λN, where N is a positive integer wherein the input waveguide extending over a first direction. The switching system further includes a two dimensional waveguide array comprising a plurality of first direction waveguides WG(i), i=1, 2, 3, , M extending over the first direction substantially parallel to the input waveguide WG(0) where M is a positive integer and a plurality of second direction waveguides WG′(j), j=1, 2, 3, N, extending over a second direction substantially perpendicular to the first direction and intersecting with the input waveguide and each of the first direction waveguide WG(i), i=0, 1, 2, 3, ,M, thus forming (M+1)×N intersections. The switching system further includes a plurality of wavelength selective grating-based switches SW(i, j) where i=0, 1, 2, 3, , M and j=1, 2, 3, , N, each disposed on one of the (M+1)×N intersections for selectively transmitting an optical signal of wavelength λj into a waveguide WG′(j) and for selectively transmitting an optical signal of a predefined combination of wavelengths into at least one of the waveguide WG(i) for i=1, 2, 3, M.
Owner:OPLUN

Dynamics bionems sensors and arrays of bionems sensor immersed in fluids

A bioNEMS device comprises a piezoresistive cantilever having flexing legs of which attach the cantilever to a support and a biofunctionalized portion at the tip. A bias current applied to the legs is limited by a maximal acceptable temperature increase at the biofunctionalized tip. The length of the cantilever has a magnitude chosen to minimize background Johnson noise. A catalyzed receptor on the device binds to a ligand whose binding rate coefficient is enhanced. The catalyst lowers the receptor-ligand binding activation energy and is designed by forced evolution to preferentially bind with the ligand. A carrier signal is injected by a magnetic film disposed on the cantilever which is electromagnetically coupled to a source of the carrier signal. A plurality of NEMS fluidicly coupled transducers generate a plurality of output signals from which a collective output signal is derived, either by averaging or thresholding. The NEMS devices are disposed in microfluidic flow channels and fabricated in a membrane. A linking molecule is attached to the tip of the transducer and a fluffball attached to the linking molecule to increase damping.
Owner:CALIFORNIA INST OF TECH

Bulk CMOS RF Switch With Reduced Parasitic Capacitance

Bulk CMOS RF switches having reduced parasitic capacitance are achieved by reducing the size and / or doping concentration of the switch's N-doped tap (N-Tap) element, which is used to conduct a bias voltage to a Deep N-Well disposed under each switch's P-Type body implant (P-Well). Both the P-Well and the N-Tap extend between an upper epitaxial silicon surface and an upper boundary of the Deep N-well. A low-doping-concentration approach utilizes intrinsic (lightly doped) N-type epitaxial material to provide a body region of the N-Tap element, whereby an N+ surface contact diffusion is separated from an underlying section of the Deep N-well by a region of intrinsic epitaxial silicon. An alternative reduced-size approach utilizes an open-ring deep trench isolation structure that surrounds the active switch region (e.g., the Deep N-well and P-Well), and includes a relatively small-sized N-Tap region formed in an open corner region of the isolation structure.
Owner:NEWPORT FAB
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products