38results about How to "Avoid memory effect" patented technology

The invention discloses an anti-breaking foil device, a post-processing anti-breaking foil method for 9 μm to 20 μm copper foil, and a post-processing machine; it belongs to the technical field of electrolytic copper foil for power batteries of new energy vehicles; its technical points include: the thickness gauge component Include at least 4 thickness gauges, of which at least 2 thickness gauges are set on the left side of the copper foil, and at least 2 thickness gauges are set on the right side of the copper foil; the two thickness gauges distributed on one side of the copper foil are used for It is used to measure the copper foil thickness of the edge and the adjacent edge area; the thickness gauge assembly and the rotation angle sensor are connected to the control system; the control system is connected with the post-processing drive motor assembly; the thickness gauge assembly is arranged in the Between the reel and the first treatment tank. Using the anti-broken foil device, 9μm-20μm copper foil post-treatment anti-break foil method, and post-processing machine of the present application can maximize production efficiency on the premise of ensuring the post-processing safety of 9-20μm copper foil.

The invention relates to a self-adapting predistortion method based on a two-dimension query table in an Orthogonal Frequency Division Multiplexing (OFDM) system comprising error calculation of signals after once predistortion processing and twice predistortion processing for OFDM source signals, self-adapting iteration operation of error signals and renewal of predistortion coefficients which enable the error signals to approach to zero. The predistortion processing employs a method that obtains an amplitude predistortion coefficient and a phase predistortion coefficient through a united index of a first dimension index address X(n) and a second dimension index address Y(n), wherein the second dimension index address Y(n) is calculated by historical input amplitude values. The technical scheme of the invention effectively overcomes memory effect of a power amplifier, and effectively expedites convergence rate of the query table at the same time of not increasing the algorithm complexity, obtains smaller mean error and simultaneously reduces the algorithm hardware implementing complexity.

The present invention disclosed a method of frequency domain modeling based on the plural reverse neural network.First transform the collected time domain signal to the frequency domain, and then use the plurality of the fit neural network to model the frequency domain data. After obtaining the output data of the neural networkThe leaf transform is converted to the time domain.Modeling the power amplifier through this method, largely reduces the frequency domain error of the amplifier.It can better describe the nonlinear characteristics and memory effects of the power amplifier through the present invention.

The invention discloses an HEMT epitaxial structure, which structurally comprises a substrate (10), a low-temperature GaN buffer layer (20), an undoped GaN high-resistance layer (30), an AlN isolation layer (40), an undoped GaN channel layer (50), a barrier layer (60) with the Al content thereof to be changing in the stepped manner, and an AlN barrier layer (70). The undoped GaN high-resistance layer and the AlN isolation layer grow after the annealing treatment of the low-temperature GaN buffer layer. Compared with the carbon-doped manner or the iron-doped manner, the crystallization quality is effectively improved and the memory effect caused by ion doping is avoided. Meanwhile, the structure is provided with multiple channels, wherein two main channels are formed at the interfaces of an AlN barrier layer and an undoped GaN channel layer with the barrier layer with the Al content thereof to be changing in the stepped manner, and multiple auxiliary channels are formed at the interface of the barrier layer with the Al content thereof to be changing in the stepped manner. Compared with a conventional HEMT device, the current driving capability of the HEMT device is enhanced. The gate leakage current of the HEMT epitaxial structure and the leakage current of the buffer layer are small, and the current driving capability is strong. Therefore, the HEMT epitaxial structure can be applied to the field of high-power electronic devices. In addition, the invention further provides a preparation method of the HEMT epitaxial structure.

A power system of an extended-range pure electric vehicle, comprising: a power battery pack (1), an engine (4), a fuel tank (2) for supplying fuel to the engine (4), a generator (5) for converting kinetic energy of the engine into electric energy, a power distribution controller (8) and a drive motor (6) for driving the vehicle to run. The power battery pack (1), the generator (5) and the drive motor (6) are all electrically connected to the power distribution controller (8). Power supplied by the power battery pack (1) and the generator (5) is supplied to the drive motor (6) by means of the power distribution controller (8). When the power of the power battery pack (1) is insufficient, the engine (4) starts so as to drive the generator (5) to generate electricity, and supply the electric power generated by the motor (5) to the drive motor (6) and charge the power battery pack (1). The described system may charge a battery pack, distribute energy intelligently and carry out maintenance of the battery pack according to the driving situation of a vehicle, and may prolong the mileage of an electric vehicle and the service life of the battery pack. Also provided by the present invention is a control method for the power system of the extended-range pure electric vehicle.