A method of manufacturing a
thin film transistor that provides high
electric field mobility is disclosed. The method comprising: a) forming an
amorphous silicon layer and a
blocking layer on an insulating substrate; b) forming a
photoresist layer having first and second
photoresist patterns on the
blocking layer, the first and second
photoresist patterns spaced apart from each other; c)
etching the
blocking layer using the first photoresist pattern as a
mask to form first and second blocking patterns; d) reflowing the photoresist layer, so that the first and second photoresist patterns abut on each other to entirely cover the first and second blocking patterns; e) forming a
metal layer over the entire surface of the insulating substrate; f) removing the photoresist layer to
expose the blocking layer and an offset region between the blocking layer and the
metal layer; g) crystallizing the
amorphous silicon layer to form a poly
silicon layer, wherein a portion of the
amorphous silicon layer directly contacting the first
metal layer is crystallized through a
metal induced crystallization (MIC), and the remaining portion of the amorphous
silicon layer is crystallized through a metal induced lateral
crystallization (MILC), so that a MILC front exists on a portion of the poly
silicon layer between the first and second blocking patterns; h)
etching the poly silicon layer using the first and second blocking patterns as a
mask to form first and second
semiconductor layers and to remove the MILC front; and i) removing the first and second blocking patterns.