Flat panel display and method for fabricating the same

Abstract

Disclosed are a flat panel display and a manufacturing method thereof. In a flat panel display, a substrate includes a pixel area having a plurality of unit pixels, and a peripheral circuit area around the pixel area. The peripheral circuit area also includes a driving circuit for driving a plurality of unit pixels. At least one circuit thin film transistor is located in the peripheral circuit region and includes a first semiconductor layer crystallized by a sequential lateral solidification method. At least one pixel thin film transistor is located in the pixel area and includes a second semiconductor layer having a channel region crystallized by one of a metal-induced crystallization method or a metal-induced lateral crystallization method.

Description

[0001] This application claims the benefit of Korean Patent Application No. 2003-81257 filed on November 17, 2003, the entire content of which is hereby incorporated by reference. technical field [0002] The present invention generally relates to a flat panel display, and in particular, relates to a flat panel display with thin film transistors and a manufacturing method thereof. Background technique [0003] In recent years, flat panel displays such as Liquid Crystal Displays (LCD) or Organic Light Emitting Displays (OLED) have been active matrix types that produce high quality images. In an active matrix display, pixel electrodes and thin film transistors for controlling electrical signals applied to the pixel electrodes are located in each unit pixel of a pixel area. [0004] A thin film transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode, and the semiconductor layer is usually a polysilicon layer whose electron mobility is about 100 ...

AI Technical Summary

Problems solved by technology

However, since pixel TFTs require different operating characteristics, pixel TFTs are different from driver circuit TFTs.

Therefore, when the thin film transistors of the unit pixel and the driving circuit are formed using the same crystallization method as described above, it is not easy to adjust the operating characteristics of the thin film transistors of the unit pixel and the driving circuit so as to be different from each other.

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