65 results about "Fin lines" patented technology

Disclosed is a method and an apparatus enabling operation of balanced phase shifts providing uniformity that the insertion loss do not show variation with the derived angles in phase shift. The invention incorporates a resonator supporting nonreciprocal wave propagation. The resonator is divided in two equal parts showing symmetry so that the change in electronic parameters from one part of the resonator counter balances the other part, thereby causing no change to the resonance condition. Amplifiers are thus not needed by the phase-shift operation. Electronically active materials, such as ferrites, ferroelectrics, and / or varactors, are utilized, and the phase shifter device can be fabricated assuming a variety of transmission-line geometries, such as microstrips, striplines, waveguides, coax lines, parallel wires, coplanar waveguides, image lines, fin lines, and slot lines, providing versatility and convenience in applications.

The invention discloses a fin line structure-based terahertz third-harmonic mixer. The fin line structure-based terahertz third-harmonic mixer comprises a metal cavity used for placing circuits, a substrate, a radio frequency input circuit and a local oscillation transitional circuit; the substrate is positioned in the metal cavity; the radio frequency input circuit and the local oscillation transitional circuit are positioned on the substrate; the radio frequency input circuit and the local oscillation transitional circuit are connected through local oscillation matching branches; the input end of the radio frequency input circuit is connected with radio frequency transitional waveguide; the fin line branch structure arranged on the radio frequency input circuit is directly connected withthe metal cavity; a Schottky diode pair on the radio frequency input circuit is mounted on the fin line; the fin line branch structure is also in grounding connection with a direct current; and the direct current grounding is positioned at the radio frequency input end of the radio frequency input circuit. By adoption of the structure, and by adopting the fin line structure in the radio frequencyport, high grounding of the direct current component in the Schottky diode can be ensured, so that the universality problem of the existing old harmonic mixer can be solved; and the terahertz third-harmonic mixer has less spurious signals and high compression point.

A heating radiator comprises a base touched with heat source, and a number of the first-level radiating fins upwardly-extending from the said base, and a heat-transfer element connected with the base for heat conduction and the first-level radiating fins lining up beside the two-side of the heat-transfer element, and a number of the second-level radiating fins extending from the contrary two-side of the heat-transfer element and perpendicular to the first-level radiating fins, and a heat pipe connecting the said base and the said heat-transfer element in order to transfer heat from the former to the latter. The invention mounts two set perpendicular radiating fins, so the smaller size of radiating fins turns into the bigger radiating area as a whole, and it increases the efficiency of the single radiating fins to improve the radiating performance.

The present invention relates to a waveguide internal solid state push-pull amplified power synthesizer based on finline balun. It includes two open power synthesis modules, between said two open modules is assembled a closed waveguide formed from at least a H-shaped power synthesis module and a partial waveguide block, several pairs of push-pull MMIC of every module are directly welded and mounted on the heat sink, and the input and output graded slit-width finline balun arrays of several finline balun structures are three-D stereoscopically placed on the electric field directions of input and output waveguide sections, and the graded slit-width finline balun array and several pairs of MMIC using push-pull mode to work are adopted to implement power synthesis in closed waveguide. It has wide frequency band, high gain and ideal linearity, so that it can be substituted for high power electric vacuum device.

The invention discloses a broadband millimeter wave hybrid waveguide magic T power divider / synthesizer, and relates to the technical field of millimeter wave communication equipment and radio amplifiers. According to the technical scheme, wedge-shaped fin lines connected through a thin-film resistor and a trapezoidal cup base probe located in an inverted-Y-shaped opening seam in a dielectric substrate are embedded in a rectangular cavity of an isolation waveguide, the thin-film resistor is etched on the dielectric substrate through a thin-film technology, and the trapezoidal cup base probe is located in a slot between the two symmetrical waveguide matching column step bodies, and is integrally matched and integrated into a magic T isolation branch; and a radio frequency signal is input into a standard rectangular main waveguide through an input standard rectangular waveguide port, is divided into a left signal and a right signal through a matching structure formed by the trapezoidal cup base probe fixed between the two matching steps, enters the height reduction rectangular branch waveguide, and outputs the radio frequency signal through an output standard rectangular waveguide port.

The invention discloses an overlay mark suitable for use in manufacturing nonplanar circuit devices and a method for forming the overlay mark are disclosed. An exemplary embodiment includes receiving a substrate having an active device region and an overlay region. One or more dielectric layers and a hard mask are formed on the substrate. The hard mask is patterned to form a hard mask layer feature configured to define an overlay mark fin. Spacers are formed on the patterned hard mask layer. The spacers further define the overlay mark fin and an active device fin. The overlay mark fin is cut to form a fin line-end used to define a reference location for overlay metrology. The dielectric layers and the substrate are etched to further define the overlay mark fin. The invention also provides the enhanced FINFET process overlay mark.

A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.

The invention provides a semiconductor device and a manufacturing method thereof. The demonstration method comprises the steps of forming a plurality of fin lines extending along a first direction on an SOI substrate, wherein the SOI substrate comprises a supporting substrate, an embedded insulating layer and an SOI layer, and the SOI layer with a certain thickness is reserved to extend among the fin lines on the embedded insulating layer after the fin lines are formed; forming a plurality of gate lines extending along a second direction which is intersected with the first direction on the substrate, wherein each gate line is intersected with the corresponding fin line through a gate dielectric layer; forming a dielectric side wall at the side walls of the gate lines; epitaxially growing a semiconductor layer on the SOI layer and the surfaces, which are not covered by the gate lines and the side wall, of the fin lines; forming an insulating isolation portion between devices in a predetermined area, wherein at least one gate line is divided into two or more parts by the corresponding insulating isolation portion, and at least one fin line is divided into two or more parts by the corresponding insulating isolation portion.

The invention discloses a W-waveband third harmonic frequency mixer. The frequency mixer comprises a metal shielding cavity, a frequency mixing circuit structure and two schottky dodoes; the frequency mixing circuit structure consists of a waveguide fin line transitional structure, two matched grooves, a fin line, a tube base gap, a gradually-changed matched line, a local oscillation low-pass filter, a local oscillation transitional probe and an intermediate-frequency low-pass filter which are arranged in sequence; and the metal shielding cavity consists of upper and lower metal cavities, and comprises a radio frequency waveguide, a local oscillation waveguide and a substrate positioning pin hole. The frequency mixer can be used for a millimeter wave communication system, particularly a W-waveband receiver system, and has the advantages of low loss, easy integration with a Ka waveband, simple structure, planar circuit and easy assembling.

The invention discloses an isolation structure and a method for fabricating the same. The isolation structure is disposed between fin transistors of a magnetic random access memory device and includesa fin line substrate. A trench spans the fin line substrate. An oxide layer is disposed on the fin line substrate outside the trench. A liner layer is disposed on the recessed surface of the trench.A nitride layer is disposed on the liner layer and partially fills the trench. The oxide residue is located on the nitride layer at the bottom within the trench. A gate-like structure is disposed on the oxide layer and completely fills the trench.