65 results about "Fin lines" patented technology

The invention discloses a device for switching a waveguide to a substrate integrated waveguide. The device comprises a special waveguide and a substrate integrated waveguide; the substrate integrated waveguide consists of a top metal layer, a dielectric substrate and a bottom metal layer; the top metal layer is etched with first multi-folding fin line gaps; the bottom metal layer is etched with second multi-folding fin line gaps; the special waveguide comprises an upper metal block and a lower metal block, the upper metal block is provided with a first waveguide slot, and the lower metal block is provided with a second waveguide slot and a substrate slot; the substrate integrated waveguide is put into the substrate slot, the first multi-folding fin line gaps are matched and aligned with the first waveguide slot, and the second multi-folding fin line gaps are matched and aligned with the second waveguide slot; and the first waveguide slot and the second waveguide slot form a waveguide opening of a standard waveguide. The device has the advantages of wide band, low insertion loss, low reflection coefficient, low machining cost, low machining difficulty and small size, so the device is favorable for large-scale production and application.

A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.

The invention discloses a rectangular waveguide microstrip airtight seal transition circuit, and aims at providing the rectangular waveguide microstrip airtight seal transition circuit of low insertion loss, broad band and all airtight. The rectangular waveguide microstrip airtight seal transition circuit is implemented through the following technical scheme: the radio frequency signal entering from the waveguide port (8) is totally reflected on the center of a coaxial step cylinder (6) through a waveguide short surface (10) so as to form the wave loop of the strongest electric field. The electric field in the rectangular waveguide (1) is coupled to the microstrip line (5) airtight sealed in a microstrip cavity (14) through a segment of coaxial inner conductor probe (11) having the coupling effect to complete electromagnetic field mode conversion between the dominant modes of the rectangular waveguide and the microstrip line, and thus transmission of the electromagnetic signal in two different transmission media can be realized. The rectangular waveguide microstrip airtight seal transition circuit is compact in structure, broad in band and great in sealing performance and can meetthe sealing requirement of the rectangular waveguide port in the practical engineering and can greatly overcome the problems caused by using the antipodal fin line and the ridge waveguide for transition.

Disclosed is a method and an apparatus enabling operation of balanced phase shifts providing uniformity that the insertion loss do not show variation with the derived angles in phase shift. The invention incorporates a resonator supporting nonreciprocal wave propagation. The resonator is divided in two equal parts showing symmetry so that the change in electronic parameters from one part of the resonator counter balances the other part, thereby causing no change to the resonance condition. Amplifiers are thus not needed by the phase-shift operation. Electronically active materials, such as ferrites, ferroelectrics, and / or varactors, are utilized, and the phase shifter device can be fabricated assuming a variety of transmission-line geometries, such as microstrips, striplines, waveguides, coax lines, parallel wires, coplanar waveguides, image lines, fin lines, and slot lines, providing versatility and convenience in applications.

The invention discloses a fin line structure-based terahertz third-harmonic mixer. The fin line structure-based terahertz third-harmonic mixer comprises a metal cavity used for placing circuits, a substrate, a radio frequency input circuit and a local oscillation transitional circuit; the substrate is positioned in the metal cavity; the radio frequency input circuit and the local oscillation transitional circuit are positioned on the substrate; the radio frequency input circuit and the local oscillation transitional circuit are connected through local oscillation matching branches; the input end of the radio frequency input circuit is connected with radio frequency transitional waveguide; the fin line branch structure arranged on the radio frequency input circuit is directly connected withthe metal cavity; a Schottky diode pair on the radio frequency input circuit is mounted on the fin line; the fin line branch structure is also in grounding connection with a direct current; and the direct current grounding is positioned at the radio frequency input end of the radio frequency input circuit. By adoption of the structure, and by adopting the fin line structure in the radio frequencyport, high grounding of the direct current component in the Schottky diode can be ensured, so that the universality problem of the existing old harmonic mixer can be solved; and the terahertz third-harmonic mixer has less spurious signals and high compression point.

A broadband full-port matched waveguide power distributing / combining method includes the steps that A, electromagnetic wave is input through an input waveguide and formed into an input signal; B, under combined action of an inductance diaphragm and an absorbing load, the signal enters a multi-layer power distribution structure; C, through multi-layer impedance gradient fin line, the space power distribution combining signal is achieved; D, the combining signal is output through an output waveguide. According to the arrangement, wide-band high-frequency efficient multi-path and fine all-port is matched, within millimeter wave frequency band, working band width reaches full band width of the waveguide, combing efficiency reaches more than 80%, frequency range is applicable to 170GHz, and an amplifier, based on the full-port matching technique, is good in stability.

A heating radiator comprises a base touched with heat source, and a number of the first-level radiating fins upwardly-extending from the said base, and a heat-transfer element connected with the base for heat conduction and the first-level radiating fins lining up beside the two-side of the heat-transfer element, and a number of the second-level radiating fins extending from the contrary two-side of the heat-transfer element and perpendicular to the first-level radiating fins, and a heat pipe connecting the said base and the said heat-transfer element in order to transfer heat from the former to the latter. The invention mounts two set perpendicular radiating fins, so the smaller size of radiating fins turns into the bigger radiating area as a whole, and it increases the efficiency of the single radiating fins to improve the radiating performance.

The invention discloses a manufacturing method for a fin on an insulator. The manufacturing method comprises the following steps: forming the fin on a substrate; forming a side wall on the side wall of the fin; carrying out anisotropic etching on the substrate and forming a bottom structure under the fin; carrying out isotropic etching on the substrate so as to reduce the width of the bottom structure; and carrying out an oxidization or nitriding process on the bottom structure so as to convert the bottom structure into the insulator. According to the manufacturing method for the fin on the insulator disclosed by the invention, a refined fin line is formed by a special sub-step etching process, and good insulated isolation between the substrate and the fin is formed by oxidizing or nitriding the lower part of the fin, so that the device performance and reliability are improved.

The present invention relates to a waveguide internal solid state push-pull amplified power synthesizer based on finline balun. It includes two open power synthesis modules, between said two open modules is assembled a closed waveguide formed from at least a H-shaped power synthesis module and a partial waveguide block, several pairs of push-pull MMIC of every module are directly welded and mounted on the heat sink, and the input and output graded slit-width finline balun arrays of several finline balun structures are three-D stereoscopically placed on the electric field directions of input and output waveguide sections, and the graded slit-width finline balun array and several pairs of MMIC using push-pull mode to work are adopted to implement power synthesis in closed waveguide. It has wide frequency band, high gain and ideal linearity, so that it can be substituted for high power electric vacuum device.

The invention discloses a transition structure from a microstrip line to a non-radiation dielectric waveguide, which belongs to the technical field of millimeter waves. According to the structure, sequential transition of a pre-stage device, a microstrip transmission section, a double-ridge fin line conversion section and a gradually-changed horn section-NRD waveguide is adopted, and coaxial line TEM signals are input into the microstrip transmission section to transmit a quasi-TEM mode; the signal is input into a double-ridge fin line conversion section, and converted from a quasi-TEM mode to a rectangular waveguide TE10 mode which deflects by 90 degrees in a polarization direction; and the signal passes through the gradually-changed horn section to generate a plurality of high-order rectangular waveguide modes, and finally an LSM01 mode of NRD waveguide transmission is formed. The structure has a good bandwidth characteristic and is suitable for integrated application in a system.

The invention discloses a manufacturing method of a 2*2 single-side double-fin linear array based on square wave guide, comprising the following steps of establishing a simulation model of the 2*2 single-side double-fin linear array and carrying out simulation to the simulation model to obtain the scattering property of the 2*2 single-side double-fin linear array; applying the Klopfenstein theory in a fin line structure, and obtaining a fin line structure with the fixed length and minimum reflection coefficient according to a numeric iteration method and obtaining effective dielectric constants corresponding to transverse nodes of the double fin lines by commercial calculation software; combining the effective dielectric constants with the scattering property, obtaining the width of fin slot corresponding to different nodes of the fin line, further obtaining a conversion curve of the fin slot of the fin line with the transverse nodes, drawing the curve by commercial drawing software and obtaining an optimized 2*2 single-side double-fin linear array based on the square wave guide. The manufacturing method effectively avoids complicate numerical calculation, adopts mature electromagnetic field simulation software and shortens design period.

The invention discloses a broadband millimeter wave hybrid waveguide magic T power divider / synthesizer, and relates to the technical field of millimeter wave communication equipment and radio amplifiers. According to the technical scheme, wedge-shaped fin lines connected through a thin-film resistor and a trapezoidal cup base probe located in an inverted-Y-shaped opening seam in a dielectric substrate are embedded in a rectangular cavity of an isolation waveguide, the thin-film resistor is etched on the dielectric substrate through a thin-film technology, and the trapezoidal cup base probe is located in a slot between the two symmetrical waveguide matching column step bodies, and is integrally matched and integrated into a magic T isolation branch; and a radio frequency signal is input into a standard rectangular main waveguide through an input standard rectangular waveguide port, is divided into a left signal and a right signal through a matching structure formed by the trapezoidal cup base probe fixed between the two matching steps, enters the height reduction rectangular branch waveguide, and outputs the radio frequency signal through an output standard rectangular waveguide port.

The invention discloses an overlay mark suitable for use in manufacturing nonplanar circuit devices and a method for forming the overlay mark are disclosed. An exemplary embodiment includes receiving a substrate having an active device region and an overlay region. One or more dielectric layers and a hard mask are formed on the substrate. The hard mask is patterned to form a hard mask layer feature configured to define an overlay mark fin. Spacers are formed on the patterned hard mask layer. The spacers further define the overlay mark fin and an active device fin. The overlay mark fin is cut to form a fin line-end used to define a reference location for overlay metrology. The dielectric layers and the substrate are etched to further define the overlay mark fin. The invention also provides the enhanced FINFET process overlay mark.

A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.

The invention discloses a waveguide broadband detector, and specifically relates to the technical field of millimeter wave waveguide detection. The invention irons out the defects that a conventional detector is not sufficient in bandwidth, is poorer in detection performance of full waveguide bandwidth, is larger in loss of a microstrip line at a millimeter wave band, is relatively low in sensitivity, is relatively difficult for diode bandwidth matching and detection circuit assembly and is poorer in frequency response because the conventional detector employs the technology of hard substrate waveguide probe coupling. The detector comprises a waveguide and a detection circuit disposed in the waveguide. The detection circuit comprises a fin line broadband conversion circuit, and the fin line broadband conversion circuit is provided with a fin line. The tail end of the fin line is provided with a diode, and the front end of the diode makes contact with the edge of the waveguide through a metal fin, thereby forming a DC grounding loop. A signal reflection circuit is disposed at a part, with the distance to the diode being a quarter of the wavelength of a detection input signal.

The invention provides a six-path synthesizer for synthesizing space power in a Ku waveband waveguide. Two single-path single-sided fin line amplifying circuit boards and two dual-path single-sided fin line amplifying circuit boards are symmetrically arranged in a rectangular waveguide vertical to the face E of the waveguide in the mode of '1+2+2+1'; and gaps exist among four amplifying circuit boards which are isolated by cushion blocks. The six-path synthesizer has the advantages that: six-path power synthesis is realized by four circuit boards in the waveguide, the space is saved, the size of a model is reduced, and the synthesis efficiency is over 80 percent.

The invention provides a semiconductor device and a manufacturing method thereof. The demonstration method comprises the steps of forming a plurality of fin lines extending along a first direction on an SOI substrate, wherein the SOI substrate comprises a supporting substrate, an embedded insulating layer and an SOI layer, and the SOI layer with a certain thickness is reserved to extend among the fin lines on the embedded insulating layer after the fin lines are formed; forming a plurality of gate lines extending along a second direction which is intersected with the first direction on the substrate, wherein each gate line is intersected with the corresponding fin line through a gate dielectric layer; forming a dielectric side wall at the side walls of the gate lines; epitaxially growing a semiconductor layer on the SOI layer and the surfaces, which are not covered by the gate lines and the side wall, of the fin lines; forming an insulating isolation portion between devices in a predetermined area, wherein at least one gate line is divided into two or more parts by the corresponding insulating isolation portion, and at least one fin line is divided into two or more parts by the corresponding insulating isolation portion.

The invention discloses a millimeter wave and terahertz sixteenth harmonic mixer based on an avalanche diode. On the basis of a microstrip transmission line and an avalanche diode that is connected to the ground in parallel, the harmonic mixer also includes a coplanar waveguide one-side fin line transmission line, two double-folded compact microstrip resonant cells (DCMRC), and a three-parallel coupling line DC block. The combination of the two double-folded compact microstrip resonant cells (DCMRC) that work at different frequencies helps to effectively improve isolation between a local oscillator and an intermediate frequency port, between a local oscillator and a radio frequency port and between an intermediate frequency port and a radio frequency port, and also enables the reactive load of a terminal at an idle harmonic frequency to be flexibly adjusted. Through the above way, the work frequency of a local oscillator is greatly reduced, the performance is greatly improved, and the cost is effectively reduced.

The invention discloses a W-waveband third harmonic frequency mixer. The frequency mixer comprises a metal shielding cavity, a frequency mixing circuit structure and two schottky dodoes; the frequency mixing circuit structure consists of a waveguide fin line transitional structure, two matched grooves, a fin line, a tube base gap, a gradually-changed matched line, a local oscillation low-pass filter, a local oscillation transitional probe and an intermediate-frequency low-pass filter which are arranged in sequence; and the metal shielding cavity consists of upper and lower metal cavities, and comprises a radio frequency waveguide, a local oscillation waveguide and a substrate positioning pin hole. The frequency mixer can be used for a millimeter wave communication system, particularly a W-waveband receiver system, and has the advantages of low loss, easy integration with a Ka waveband, simple structure, planar circuit and easy assembling.

An IC chip includes a logic circuit cells array and a static random access memory (SRAM) cells array. The logic circuit cells array includes a plurality of logic circuit cells abutted to one another in a first direction. The logic circuit cells array includes one or more continuous first fin lines that each extends across at least three of the abutted logic circuit cells in the first direction. The static random access memory (SRAM) cells array includes a plurality of SRAM cells abutted to one another in the first direction. The SRAM cells array includes discontinuous second fin lines.

The invention discloses a fin manufacturing method which comprises the following steps: forming multiple hard mask lines on a substrate; performing wet etching on the substrate, and forming multiple grooves and multiple initial fins among the grooves; adjusting the sectional morphology of the initial fins, reducing the top and / or bottom widths of the initial fins, and forming the final fins. According to the fin manufacturing method disclosed by the invention, refined fin lines are formed according to a special stepped etching process, and the performance and reliability of the device are improved.

The invention discloses a circuit simulation method for a fin edge roughness effect in a fin type field effect transistor, and belongs to the field of a microelectronic device. The circuit simulation method is based on a predictable intensive model; a rough fin edge is extracted from an electron microscopy image of a fin line; the self-correlation function of the fin edge is calculated; then fin width distribution under the influence of the fin edge roughness can be obtained by a computational formula; and the fin width distribution is embedded into a simulation netlist of circuit simulation software to perform circuit simulation to obtain circuit performance parameters caused by the fin edge roughness. By adoption of the circuit simulation method, the device characteristic fluctuation influences can be accurately obtained; all the parameters can be subjected to reference regulation by a result obtained by TCAD monte carlo simulation; and compared with the conventional method, the fluctuation of a (sub-threshold slope) SS of the device, and the correlation between the fluctuation of the SS and a threshold voltage Vth can be predicted.

The invention relates to a millimeter-wave fin-line switching feed circuit. Compared with the prior art, serrated branchknots are replaced with uniform metallized through holes; through adjustment, acertain space is reserved between a fin-line transition circuit and a waveguide wall for the optimization of insertion loss and return loss; the design is simple, and the circuit performance is excellent. From simulation results, the leakage of signals in a feed port is lower than -40 dB.

The invention provides a millimeter-wave two-port sub-harmonic mixer. The mixer comprises a doubled frequency interval rectangular waveguide-anti-pole fin line-microstrip transitional circuit, a radioffrequency local oscillation matching circuit, a low-pass filtering circuit and an anti-parallel diode pair; the doubled frequency interval rectangular waveguide-anti-pole fin line-microstrip transitional circuit, the radio ffrequency local oscillation matching circuit and the low-pass filtering circuit and an anti-parallel diode pair are printed on a dielectric substrate; and the anti-parallel diode pair is carried on a circuit substrate. According to the mixer provided by the invention, a radio frequency signal and a local oscillation signal are input from the same port while an intermediate frequency signal is output by a single port; and the millimeter-wave two-port sub-harmonic mixer has the characteristics of capability of forming the input and output ports in the same straight line, broad working frequency band, low frequency conversion loss, low cost and the like, and can be effectively applied to a millimeter-wave array imaging system.

The invention relates to a waveguide double antipodal fin-line and microstrip line type space power synthesizer which includes a connecting waveguide port, a transition structure, an anti-resonance piece and microstrip lines. The transition structure adopts metal gradual change fin lines of a cosine square equation to be printed on the obverse side and the reverse side of a dielectric substrate, the metal gradual change fin line on the obverse side is in transition into two microstrip lines, the metal gradual change fin line on the reverse side is used as ground, the anti-resonance piece is printed on the reverse side of the dielectric substrate, and the shape with semicircle at the two ends and rectangle in the center is adopted.

An electronic circuit includes a plurality of fin lines on a substrate and a plurality of gate lines with a first line width, crossing over the fin lines. The gate lines are parallel and have a plurality of discontinuous regions forming as a plurality of slots. A region of any one of the gate lines adjacent to an unbalance of the slots has a second line width smaller than the first line width.

The invention discloses a millimeter wave antenna array element which comprises two vertical platy radiation units. The platy radiation units are mutually orthogonal and used for radiating vertical polarization direction signals and horizontal polarization direction signals. The platy radiation units comprise lower substrate integrated waveguide (called SIW for short) filters and upper gradient fin line antennas, and the lower substrate integrated waveguide filters and the upper gradient fin line antennas share the same dielectric substrate. The invention further discloses a millimeter wave antenna array and a millimeter wave communication device. Radiation components and the filters are vertically integrated into a whole, the millimeter wave antenna array element has the advantage of compact structure, and more importantly, phases and amplitudes of signals transmitted by each array element in the antenna array can be kept basically the same.

The invention discloses a single-sided quartz fin line double diode terahertz balanced type frequency doubling circuit, and relates to the technical field of a frequency multiplying conversion circuit. The circuit includes a quartz substrate fin line circuit, two GaAs-based terahertz Schottky diodes reversely connected in series, a radio frequency input waveguide and a radio frequency output waveguide. The quartz substrate fin line circuit includes a quartz circuit substrate and front and back side fin lines located on the quartz circuit substrate. The two Schottky diodes are electrically connected with the front side fin line at one end and with the back side fin line at the other end. The Schottky diodes are located at the position where the distance between the front and back side fin lines remains unchanged. The circuit allows the radio frequency input and output waveguides to be one the same straight line to facilitate the design of the circuit personnel, meanwhile, the processing becomes easier, high power input can be withstood, and the output power is increased.

The invention discloses an isolation structure and a method for fabricating the same. The isolation structure is disposed between fin transistors of a magnetic random access memory device and includesa fin line substrate. A trench spans the fin line substrate. An oxide layer is disposed on the fin line substrate outside the trench. A liner layer is disposed on the recessed surface of the trench.A nitride layer is disposed on the liner layer and partially fills the trench. The oxide residue is located on the nitride layer at the bottom within the trench. A gate-like structure is disposed on the oxide layer and completely fills the trench.

A magnetically-tunable filter comprising a filter housing with two tunable resonator spheres made of magnetizable material, which are disposed one above the other in two filter arms. At least one filter arm provides a fin line or slot line disposed on a substrate layer and extending in the direction towards an electrical contact, and a common coupling aperture, thereby connecting the two filter arms to one another. In this context, one resonator sphere is positioned within each filter arm on each of the two sides of the coupling aperture.