The invention provides a method and a device for manufacturing a 3D cryptographic
chip resisting
fault injection attacks, and relates to the technical field of safety of the 3D cryptographic
chip. The method comprises the following steps of: determining a sensitive logical unit in a cryptographic circuit according to a
fault injection attack method corresponding to a cryptographic
algorithm used for the cryptographic circuit; layering the cryptographic circuit in a 3D mode, dividing the sensitive logical unit into a middle layer of the 3D
layers, and generating a 3D cryptographic circuit subjected to 3D layering; determining liable-to-overturn region type of the region, where the sensitive logical unit is, in the 3D cryptographic circuit according to
charged particle mobility under the influence of TSV (Through
Silicone Vias) and STI (Sallow Trench Isolation) in the 3D cryptographic circuit; respectively inserting corresponding sensors at locations of the sensitive logical units a PMOS liable-to-overturn region, a NMOS liable-to-overturn region or a random overturn region, and completing safety manufacturing of the 3D cryptographic
chip. The method and the device provided by the invention solve the problem of poor resistivity of the current 3D cryptographic chip to the
fault injection attacks.