98 results about "Carrier current" patented technology

A system including associated equipment for transmitting radio-frequency power line carrier signals on high voltage ac or dc transmission lines within a multi-conductor bundle, one path for which is provided by one or more conductors located at the center of the bundle, and the other by the remaining conductors connected in electrical parallel and arrayed in a generally circular pattern around the center. Insulated conductor spacers hold the conductors in their symmetrical configuration and insulate the center conductor, allowing it to serve as a radio frequency path similar to that in a conventional coaxial cable. The system provides low attention, low vulnerability to external noise and low radiation of the carrier signal while providing redundant channels—three for ac transmission lines and two for bipolar dc transmission lines.

The photonic mixer comprises a couple of an injecting contact region (3,4) for injecting the majority carrier current into the semiconductor substrate (1) and a detector region (7,8) for collecting the photocurrent. The injecting contact region (3,4) is doped with a dopant of the first conductivity type (p+) at a higher dopant concentration than the semiconductor substrate (1). The detector region (7,8) is doped with a dopant of a second conductivity type (n+) opposite the first conductivity type and has a junction (11,12) with the semiconductor substrate (1), a zone of the semiconductor substrate (1) around said junction (11,12) being a depleted substrate zone (101, 102). The couple further comprises a field shaping zone (13, 14) of the first conductivity type (p−) defining a lateral edge of the couple and having a dopant concentration higher than the dopant concentration of the semiconductor substrate (1), for example between the dopant concentrations of the semiconductor substrate (1) and the injecting contact region (3,4), which field shaping zone (13, 14) is designed to limit said depleted substrate zone (101, 102) laterally.

The invention relates to a majority current assisted detector device, comprising a semiconductor layer of a first conductivity type epitaxially grown on a semiconductor substrate, at least two control regions of the first conductivity type, at least two detection regions of a second conductivity type opposite to the first conductivity type, and a source for generating a majority carrier current in the semiconductor layer between the two control regions, the majority current being associated with an electrical field. The detection regions surround the control regions, thereby forming at least two taps. The device is configured for backside illumination and further comprises a well of the first conductivity type between the two detection regions for insulating the detection regions. The well comprises pixel circuitry elements.

The invention relates to a carrier wave communication device of a power line and a carrier wave communication method thereof. The carrier wave communication device of the power line comprise a currenttransformer, a signal conditioning circuit, an analog-to-digital conversion circuit, a communication interface, a carrier wave processor and a power module, wherein the current transformer is used for coupling carrier wave current signals to the power line or / and taking the carrier wave current signals and power frequency signals out of the power line; the input end of the signal conditioning circuit is connected with the output end thereof; the input end of the analog-to-digital conversion circuit is connected with the output end of the signal conditioning circuit, and the analog-to-digitalconversion circuit is used for converting the carrier wave current signals; the communication interface is used for transmitting and receiving data; the carrier wave processor is used for managing thecarrier wave communication device of the power line; and the power module is used for supplying power to the carrier wave communication device of the power line. Because the carrier wave current signals pass through a signal coupler, the carrier wave communication of the power line can be performed through only one power line, and then the carrier wave communication device can thoroughly solve the technical problem of unreliable communication of the carrier wave communication device on a medium and low voltage power line in the prior art.

A magnetic recording apparatus includes a magnetic recording medium having a magnetic recording layer, a thin-film magnetic head with a microwave-band magnetic drive function, the head having a write field generation means that generates a write field to the magnetic recording medium in response to a write signal, and a microwave generator that is provided independent of the write field generation means and generates an alternating magnetic field in plane having a microwave-band frequency when microwave-excitation current is fed, an excitation current generation means that generates the microwave-excitation current by amplitude-modulating microwave carrier current with a modulating signal having a fixed period, and a write signal supply means that generates the write signal and applies it to the write field generation means of the thin-film magnetic head.

Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.

The invention discloses a vertical constant-current diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The vertical constant-current diode comprises a cellular structure and a terminal structure connected in sequence, wherein the cellular structure comprises a plurality of cells same in structure and connected in sequence; the terminal structure comprises a cut-off ring and a plurality of field limiting rings connected in sequence. The constant-current diode adopts a P-type doped semiconductor material opposite to an epitaxial layer in doping type as a substrate, and a P-type light-doped substrate injects holes to an N-type light-doped epitaxial layer, so that the constant-current diode has two carrier currents, namely hole current and electron current, and the current density of a device is increased; moreover, substrates with different doping types assist in depletion of a channel, accelerate pinching-off of a JFET (junction field-effect transistor) region channel and enable pinch-off voltage to be lower than 4 V.

The invention provides a solvent type aeolotropic nano conductive adhesive, which is a uniform mixture of 10 to 1,000 nanometer silver nano particles, a polymer material and a polar solvent. The solvent type aeolotropic nano conductive adhesive has uniform conducting particles; compared with compound particles which only have surface conductivity, the silver nano-particles have overall conductivity and a heavier carrier current. The invention also provides a method for manufacturing the solvent type aeolotropic nano conductive adhesive, which comprises the steps of: firstly, preparing high-concentration silver nano dispersion by using a microwave aided method; and secondly, mixing the dispersion and high polymer to prepare the high-performance aeolotropic nano conductive adhesive. The conductive adhesive contains the uniform particles and the preparation method is simple, so the conductive adhesive is particularly suitable for packaging of fine circuits with a diameter of less than 5 micrometers and chips.

A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be realized also in CMOS technology. The charge transport in a surface or even a buried channel close to the surface is highly efficient in terms of speed, sensitivity and low trapping noise. In addition, by activating a majority carrier current flowing through the substrate, another drift field is generated below the depleted CCD channel. This drift field is located deeply in the substrate, acting as an efficient separator for deeply photo-generated electron-hole pairs. Thus, another large amount of minority carriers is transported to the diffusion nodes at high speed and detected.

The invention discloses a method for preparing a microfluidic chip probe array for use in biochip analysis, which relates to biochips. The method comprises: introducing solution to a micro channel; arranging storage tanks or small test tubes, which contain mineral oil or other solvents insoluble in water and probe solution, at intervals for supplying liquid, and realizing a liquid drop sequence of 'mineral oil, probe solution, mineral oil, probe solution and mineral oil' in the micro channel by replacing the supplied liquid at the entrance of the micro channel, wherein the mineral oil serves as a carrier current and the probe solution serves as a drops flowing in the carrier current; and after the probe liquid drop sequence flows to a preset position, making the probe liquid drop sequence stop flowing to allow the probes in the liquid drops to emit light automatically or to be immobilized on the inside surface of the micro channel by the reaction or absorption initiated by light, electricity and magnet in the outside, discharging the mineral oil and the probe liquid drops after the immobilization reaction is finished and washing with buffer liquid to finish the whole step.

A telemetry tool is placed in a drill string adjacent to a drill bit. The telemetry tool includes position and direction sensors, a power supply, a signal receiver and a signal emitter. An external base unit, may be mounted on the surface at some distance from the wellhead. The external base unit generates, and transmits into the geological formation, a carrier signal. The carrier signal may be a DC carrier signal, and it may be a variable DC signal.The base unit also has a receiving unit, which may have the opposite DC voltage to that of the carrier signalemitting unit. The geological formation provides a large current path between the carrier current generating unit and the downhole end of the drill string. The carrier current, or some portion thereof, is received at the telemetry unit. The drill string defines a relatively low resistance conductor for the return signal. Thus a circuit is established from the base unit, through the geological formation to the telemetry unit, and back up the drill string to end back at the base unit.The telemetry unit superimposes a time varying signal on the carrier current. The time varying signal includes a recognition sequence, followed by a data string. The data string may include information pertaining to compass direction, azimuth dip, rotational speed, acceleration in any of three axes, and so on.The base unit strips the signal off the carrier current, and reads the code. This system may tend to permit the telemetry tool to operate at relatively low power. The relatively higher power carrier current is provided by the base unit.

The invention discloses a semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductors. The semiconductor device comprises a plurality of cells which are the same in structure and are sequentially connected with one another, wherein each cell comprises an N-type doped substrate, an N-type lightly doped epitaxial layer, a diffused P-type well region, a first P-type heavily dope region, an N-type heavily dope region, an oxidation layer, a metal cathode, a second P-type heavily doped region and a metal anode; the N-type lightly doped epitaxial layer is located on the N-type doped substrate; the diffused P-type well region is located in the N-type lightly doped epitaxial layer; the first P-type heavily dope region and the N-type heavily dope region are located in the diffused P-type well region; the oxidation layer is located on the upper surfaces of the N-type lightly doped epitaxial layer and the diffused P-type well region; the metal cathode covers the overall cells; and the second P-type heavily doped region and the metal anode are located on the lower surface of the N-type doped substrate. According to the semiconductor device disclosed by the invention, a semiconductor material which is opposite to the substrate in the doping type is injected into the back surface of the substrate, so that, on one hand, holes are injected into the N-type substrate and the N-type lightly doped epitaxial layer through P-type heavily doped back injection, the semiconductor device has two carrier currents, namely a hole current and an electron current, and the current density of the device is increased; and on the other hand, the reverse withstand voltage of the device can be improved.

The photonic mixer comprises a couple of an injecting contact region (3, 4) for injecting the majority carrier current into the semiconductor substrate (1) and a detector region (7, 8) for collecting the photocurrent. The injecting contact region (3, 4) is doped with a dopant of the first conductivity type (p+) at a higher dopant concentration than the semiconductor substrate (1). The detector region (7, 8) is doped with a dopant of a second conductivity type (n+) opposite the first conductivity type and has a junction (11, 12) with the semiconductor substrate (1), a zone of the semiconductor substrate (1) around said junction (11, 12) being a depleted substrate zone (101, 102). The couple further comprises a field shaping zone (13, 14) of the first conductivity type (p−) defining a lateral edge of the couple and having a dopant concentration higher than the dopant concentration of the semiconductor substrate (1), for example between the dopant concentrations of the semiconductor substrate (1) and the injecting contact region (3, 4), which field shaping zone (13, 14) is designed to limit said depleted substrate zone (101, 102) laterally.

A magnetic levitation type vacuum pump includes an electromagnet magnetically levitating a rotor by a magnetic force, an electromagnet driving circuit supplying an electromagnet current including a magnetic levitation control current component and a carrier wave current component having a frequency band higher than the magnetic levitation control current component to the electromagnet coil, a levitated position detecting circuit detecting the carrier wave current component and generating a levitated position signal of the rotor, a magnetic levitation control circuit inputting a current command of the magnetic levitation control current component to the electromagnet driving circuit based on the levitated position signal. The electromagnet coil has a primary coil and a secondary coil connected in parallel with the primary coil. An interrupting circuit connected in series with the secondary coil for the carrier wave current component passing therethrough and interrupting the magnetic levitation control current component is further included.

The invention discloses a medium voltage broadband power line carrier communication circuit. The medium voltage broadband power line carrier communication circuit comprises a broadband carrier chip, a carrier amplifying unit, a carrier receiving unit, a coupling unit, and a power supply unit. The broadband carrier chip is respectively connected with the coupling unit by the carrier amplifying unit and the carrier receiving unit. The power supply unit is respectively connected with the broadband carrier chip, the carrier amplifying unit, and the carrier receiving unit. The carrier amplifying unit comprises a carrier voltage amplifying module and a carrier current amplifying module, which are in serial connection. The carrier current amplifying module comprises a first current amplifying sub-module and a second current amplifying sub-module, which are in a parallel connection. The output end of the first current amplifying sub-module and the output end of the second current amplifying sub-module are respectively connected with the coupling unit. The medium voltage broadband power line carrier communication circuit is advantageous in that a 10kV medium voltage power distribution network is used as high speed data transmission medium for communication, and is used for power amplification of high frequency broadband carrier signals in a range from 0MHz to 20MHz, and has advantages of high communication rate, good communication performance, simple circuit structure, and low implementation costs.

A replenishment and image mottle reduction system for adding carrier particles to a developer housing in a two-component developer toner imaging machine. The replenishment system includes (i) a carrier-only hopper for receiving and containing a first quantity of carrier particles; (ii) metering valves connected to a discharge end of the carrier-only hopper; (iii) a pneumatic plenum connected to the metering valves; (v) an air blower connected to the carrier-only hopper and to the pneumatic plenum for pressurizing the carrier-only hopper and for pneumatically conveying a metered quantity of carrier particles in an air stream from the pneumatic plenum; and (vi) a carrier separator assembly connected to the pneumatic plenum, located above each developer housing and including a carrier current collector, for separating fresh carrier from the air stream, and for allowing the carrier separated as such to drop by gravity into the developer housing.

A magnetic recording apparatus includes a magnetic recording medium having a magnetic recording layer, a thin-film magnetic head with a microwave-band magnetic drive function, the head having a write field generation means that generates a write field to the magnetic recording medium in response to a write signal, and a microwave generator that is provided independent of the write field generation means and generates an alternating magnetic field in plane having a microwave-band frequency when microwave-excitation current is fed, an excitation current generation means that generates the microwave-excitation current by amplitude-modulating microwave carrier current with a modulating signal having a fixed period, and a write signal supply means that generates the write signal and applies it to the write field generation means of the thin-film magnetic head.

The present invention, referred to as optoelectronic probe, concerns a novel apparatus and method for characterization and micromanipulation of particles or biomolecules in an electrolyte solution. Electric fields, which include both time constant and time-varying components, are applied to a thin insulating layer covered, lightly doped semiconductor material. Illumination injects carriers into the insulator / semiconductor interface to compensate the leaking minority carrier current and maintain an inversion layer, which works as an electrode to control the particle movements. A particle array, or even a single cell, can be assembled in, or moved along with the inversion layer electrode, which is induced by illumination. Furthermore, an impedance analyzer is utilized to characterize the trapped particles, or single cell. The present invention has numerous uses, such as bio-chemical analysis systems, and nanosize structures assembly for electronic or optical devices.

Impinging electromagnetic radiation generates pairs of majority and minority carriers in a substrate. A spectrometer device for detection of electromagnetic radiation impinging on a substrate comprises means for generating, in the substrate, a majority carrier current; at least one detection region for collecting generated minority carriers, the minority carriers being directed under influence of the majority carrier current; and means for determining spectral information based on minority carriers collected at the at least one detection region.

The invention relates to a bus system based on a DC power supply line. The system at least comprises a coupling module and a separation module; the coupling module can transmit a carrier communicationsignal to the separation module by using a DC power supply device according to a differential power carrier mode; the coupling module is configured as follows: a carrier current of the DC power supply device is primarily isolated through a first inductive reactance isolation module and secondarily isolated through a first impedance conversion module. Therefore, under the condition that the firstinductive reactance isolation module cannot effectively isolate the noise of the carrier current with a higher current value; it is ensured that the first impedance conversion module can form band elimination on the carrier current and generate stable carrier current which is subjected to secondary isolation and has a high signal-to-noise ratio; the load information flow of the coupling module isdifferentiated through the carrier generation module and generates a carrier communication signal, and the carrier communication signal and the stable carrier current are coupled through the couplingmodule and generate a carrier current with a high signal-to-noise ratio and a carrier communication signal.

The invention discloses a method and a device for detecting interference. The method and the device for detecting the interference comprise the following steps: conducting channel estimation on a carrier current channel so as to obtain a tap of an impact response of the carrier current channel; calculating a self-correlation function of the carrier current channel, a self-correlation function of a received baseband symbol and a self-correlation function of the interference or a noise, and checking whether a formula is realized or not according to the tap of the impact response of the carrier current channel; when the formula is realized, then inexistence of the interference is ascertained; and when the formula is not realized, then existence of the interference is ascertained. The method and the device for detecting the interference are simple in calculation method and low in false dismissal probability of detection of the interference. By adopting the method for detecting the interference, existence of the interference can be detected accurately, so that a basis is provided for the decision that whether an interference suppression or an interference elimination algorithm is adopted or not when a digital baseband is demodulated in a balanced mode.

The invention relates to a detector device assisted by majority current, comprising a semiconductor layer of a first conductivity type, a plurality of control regions of the first conductivity type, at least one detection region of a second conductivity type opposite to the first conductivity type and a first source for generating a majority carrier current associated with an electrical field, characterized in that it further comprises control circuitry arranged for controlling the first source and controlling individually at least one of said first majority carrier currents.

In an intelligent centralized control panel, in particular for motors in which case it is known under the name of iMCC, communications with the outside are performed by powerline carrier current or PLC. The wiring of the control panels can thereby be greatly reduced. To enable this type of communication to be used in dense systems containing a large number of line starters and therefore a large number of parallel-connected carrier current interfaces, the invention proposes inserting a preferably electronically adjustable impedance in series with the PLC conversion device. Advantageously, an adjustment algorithm enables the values of the added impedances to be optimized according to the geometry and position of the different interfaces.

In the field of the allocating of communication addresses to devices connected to a carrier-current communication network and more particularly, networks for the remote reading of electrical meters from a data concentration apparatus through the electrical network, there is proposed an improved method of allocating MAC addresses for this type of network making it possible to save a great deal of time during the address allocation phase. This method proposes in particular that a list associating the serial numbers of the devices and the MAC address allocated be stored at the level of the central device for allocating addresses. It is also proposed that a cataloguing request be sent, serving to allocate the MAC address prior to the sending of a communication frame.

The invention discloses a radar captive carrying test position parameter automatic binding method based on measurement and control equipment. The method comprises the following steps: before the radar captive carrying test, position information of all targets is inputted to the measurement and control equipment; in the case of the radar captive carrying test, the measurement and control equipment reads inertial navigation information of aerial carrier inertial navigation equipment in real time to acquire position information and gesture information of the aerial carrier; according to the target position information, the aerial carrier position information and the aerial carrier gesture information, the measurement and control equipment calculates relative position pre- binding parameters between the aerial carrier current position and each target; and when the aerial carrier arrives in an opening position range, the measurement and control equipment gives early warning information, an operator selects a target according to the early warning information, the measurement and control equipment binds the corresponding relative position pre-binding parameters, and position parameter binding of the radar captive carrying test is completed. The binding parameters are complete, binding errors are controllable, the binding efficiency is high, the error rate is low, and guarantee is provided for radar search and interception precision.

The invention provides an epitaxial layer-based vertical current regulative diode and a manufacturing method thereof and belongs to the technical field of a semiconductor power device. The epitaxial layer-based vertical current regulative diode comprises a cell structure and a terminal structure which are sequentially connected, wherein the cell structure consists of a plurality of cells which are of the same structure and are sequentially connected; the terminal structure consists of a check ring and a plurality of field limiting rings; the field limiting rings are sequentially connected. According to the epitaxial layer-based vertical current regulative diode, a P type doped semiconductor material contrary to the doping type of an epitaxial layer serves as a substrate, so that the current of the vertical current regulative diode is two types of carrier current, i.e. hole current and electronic current, and the current density of a device is increased; meanwhile, a conduction channel area is exhausted under the assistance of the substrate, the defect that the pinch-off voltage is increased when a PN junction is introduced is weakened, and a linear area of the device is steeper.