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Vertical constant-current diode and manufacturing method thereof

A constant current diode, vertical type technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high pinch-off voltage of constant-current diodes, increase device current density, low pinch-off voltage, etc., to achieve The effect of saving manufacturing cost, increasing current density, and stabilizing current value

Active Publication Date: 2015-07-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems of high pinch-off voltage, low breakdown voltage and poor constant current capability of constant current diodes, the present invention proposes a vertical constant current diode and its manufacturing method. The P-type doped semiconductor material with the opposite heterotype is used as the substrate, so that the constant-current diode conducts electricity for both hole and electron carriers, which increases the current density of the device; the constant-current diode of the present invention achieves a lower pinch-off voltage, higher breakdown voltage and better constant current capability, and the terminal structure and cell structure of the constant current diode can be formed at the same time, which simplifies the process and reduces the cost

Method used

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  • Vertical constant-current diode and manufacturing method thereof
  • Vertical constant-current diode and manufacturing method thereof
  • Vertical constant-current diode and manufacturing method thereof

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Embodiment

[0052] This embodiment takes a vertical constant current diode with a withstand voltage of 250V and a current of about 2E-5A / μm as an example to describe the technical solution of the present invention in detail.

[0053] With the help of TSUPREM4 and MEDICI simulation software for example figure 2 The cell of the vertical constant current diode shown in the process simulation is carried out. The simulation parameters are: the thickness of the initial silicon wafer is about 250 μm, and the concentration of the P-type lightly doped substrate 2 is 7.5E14cm -3 , the N-type lightly doped epitaxial layer 3 has a thickness of 22 μm and a concentration of 8E14 cm -3 The depth of the symmetrical two first diffused P-type well regions 4 is about 5 μm, the width is about 11.2 μm, the distance between the two first diffused P-type well regions 4 is 8 μm, and the dose of boron implanted is about 1.5E13cm -2 , the implantation energy is 120keV, and the push-in time is 200 minutes; -2 , ...

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Abstract

The invention discloses a vertical constant-current diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The vertical constant-current diode comprises a cellular structure and a terminal structure connected in sequence, wherein the cellular structure comprises a plurality of cells same in structure and connected in sequence; the terminal structure comprises a cut-off ring and a plurality of field limiting rings connected in sequence. The constant-current diode adopts a P-type doped semiconductor material opposite to an epitaxial layer in doping type as a substrate, and a P-type light-doped substrate injects holes to an N-type light-doped epitaxial layer, so that the constant-current diode has two carrier currents, namely hole current and electron current, and the current density of a device is increased; moreover, substrates with different doping types assist in depletion of a channel, accelerate pinching-off of a JFET (junction field-effect transistor) region channel and enable pinch-off voltage to be lower than 4 V.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a vertical constant current diode and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, that is, a diode is used as a constant current source instead of an ordinary constant current source composed of transistors, Zener tubes and resistors. Currently, constant current diodes The output current is between a few milliamps and tens of milliamperes, which can directly drive the load, achieving the purpose of simple circuit structure, small dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/0696H01L29/6609H01L29/861
Inventor 乔明张康于亮亮何逸涛张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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