A set of
memory cell test structures and a method are disclosed for assessment of the
static noise margin (SNM) of a
memory cell or an array of such cells, for example, of SRAM cells of an
integrated circuit device, using discrete point measurement structures provided either on-
chip or within the scribe lines. In one embodiment, the set of memory structures comprises first and second test structures, individually comprising a
memory cell, having one or more left and right half-
bit test structures having hard-wired connections between select nodes of each memory
cell half-bit and one or more
voltage supplies. The half-bits of the first
test structure are configured for measuring respective left and right standby SNM values, and the half-bits of the second
test structure are configured for measuring respective left and right
cell ratio values at respective output nodes of the structures, using applied supply voltages for on-
chip assessment of the
static noise margin of the memory cells. The method applies the supply voltages to select nodes of the test structures, measures left and right standby SNM values at a first
test structure, measures left and right
cell ratio values at a second test structure, determines a first difference between the
left half-bit standby SNM value and the right half-
bit cell ratio value, determines a second difference between the right half-bit standby SNM value and the
left half-
bit cell ratio value, and determines a smaller one of the first and second difference values proportional to an SNM value of the cell.