49results about How to "Troubleshoot integration issues" patented technology

The invention relates to a substrate structure for a monolithic optical detection and electric signal processing integrated device and a forming method of the substrate structure, and belongs to the technical field of semiconductor devices and integrated circuits. According to the scheme, under the condition of high-resistance silicon semiconductor material optical detection and optical detection signal separated processing and lack of a monolithic integration solution, the problems that the difference of the work voltage of an optical detector and the work voltage of an optical detecting signal processing circuit is large, and an optical detecting device structure and an optical detecting signal processing circuit device structure can be hardly compatible with a process can be solved. According to the scheme, the integrated electronic device can comprise an independent NPN transistor, an NMOS transistor, a PMOS transistor, a DMOS transistor or the combination of the independent NPN transistor, the NMOS transistor, the PMOS transistor and the DMOS transistor. According to the scheme, the substrate structure comprises eight basic structure elements, namely, a low-resistance semiconductor material (1), a high-resistance semiconductor material (2), an exhaust restraining area (3), a device epitaxial layer (4), an electronic device area (5), an optoelectronic isolation dielectric area (6), an optoelectronic isolation channel blocking area (7) and an optical detector ohmic contact area (8).