The invention discloses a high-
gain and ultrahigh-frequency GaN device and a fabrication method thereof. By the high-
gain and ultrahigh-frequency GaN device, the problem of
low frequency,
gain and power conversion efficiency of an existing similar device is mainly solved. The device comprises a substrate (1), an AlN nucleating layer (2), a GaN buffer layer (3), an AlN
insertion layer (4), an AlGaN
barrier layer (5) and a
passivation layer (7) from bottom to top, wherein a source
electrode (8) and a drain
electrode (9) are arranged at two ends of the GaN buffer layer, a
metal interconnection layer (11) is arranged on the source
electrode and the drain electrode, a self-alignment stepped dual-T-shaped electrode (10) is arranged on the AlGaN
barrier layer, a groove is formed in a grid pin (101) of the grid electrode, a grid
dielectric layer (6) is arranged above the groove, and the
passivation layer is arranged on a surface of the
barrier layer at two sides of the grid electrode pin. By the high-gain and ultrahigh-frequency GaN device, the grid electric leakage and the
parasitic capacitance are reduced, the current collapse is suppressed, the power conversion efficiency and the frequency and gain characteristic of the device are improved, and the high-gain and ultrahigh-frequency GaN device can be used as a high-gain and ultrahigh-frequency device.