380results about How to "Launch evenly" patented technology

A light-emitting device is provided that can extract light in all directions and that has wide directivity. This light-emitting device includes: an elongated bar-shaped package extending sideways, the package being formed such that a plurality of leads are formed integrally with a first resin with part of the leads exposed; a light-emitting element that is fixed onto at least one of the leads and that is electrically connected to at least one of the leads; and a second resin sealing the light-emitting element. In the light-emitting device, the first resin and the second resin are formed of optically transparent resin, and the leads have outer lead portions used for external connection and protruding sideways from both left and right ends of the package.

A cradle includes a housing, an indicator configured to display a status by emitting light, a light-emitting unit serving as a light source for causing the indicator to emit the light, and a reflection unit for guiding the light emitted from the light-emitting unit to the indicator by reflecting the emitted light to the indicator.

The present invention relates to an LED lamp in which, because the lamp has therein a heat dissipation transfer member and the power source base thereof is made of materials including polycarbonate, etc. with a high emission rate of radiation so as to enhance its surface heat dissipation constant, the power source base has sufficient heat dissipation performance and, thus, a separate insulation circuit is not necessary, thereby improving reliability and productivity of the lamp as well as reducing the cost of manufacturing.To this end, the present invention provides an LED lamp comprising one or more LEDs mounted on a PCB, a floodlight cover that transmits light from the LEDs, and a power source base coupled to the floodlight cover and having a terminal at one end thereof, wherein the power source base is made of an insulation material; and the LED lamp also comprises a heat dissipation transfer member that has a heat sink in contact with the PCB on which the LEDs are mounted, and is formed and installed so as to overlap with and be in tight contact with the inner face of either the power source base or the floodlight cover or both.

An illumination device (L) includes a plurality of light source units (20) each having a light guide plate (1) and a plurality of light sources (21). The light guide plate (1) has an illumination region (4) through which incident beams of light from the light sources (21) are emitted outward and a light guide region (3) through which the incident beams of light from the light sources (21) are guided toward the illumination region (4), with the light guide region (3) and the illumination region (4) laid side-by-side. The illumination region (4) is divided into a plurality of light-emitting sections (9) by slit sections (8), provided in such a way as to extend along directions of optical axes of the light sources (21), which restrict transmission of light. At least one of the light sources (21) is provided to each of the light-emitting sections (9) in such a way as to be placed side-by-side along the light guide region (3). The light source units (20) are provided in such a way as to be placed side-by-side along at least along a first direction along which the light-emitting sections (9) are arranged in the illumination region (4). There is also provided a slit section (8) in at least part of a space between light-emitting sections (9) between light source units (20) adjacent to each other along the first direction. This makes it possible to provide an illumination device (L) capable of retaining its strength as a combination of light guide blocks while reducing leakage of light into an adjacent area and capable of emitting uniform light.

In the illumination device of the invention, an LED is oppose to a side surface of a flat light guide member. A light shield surface for shielding light from the LED and emitted toward the backside of the guide member in vicinity of the LED on the backside of the light guide member.

An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 108 / cm2. Such an electron source can be modulated with an extra low voltage, emits electrons with high current density and high uniformity, and operates with high energy-efficiency and long lifetime.

A color conversion substrate including a first fluorescent layer 2a emitting first fluorescence and a second fluorescent layer 2b emitting second fluorescence on a supporting substrate 1, and the first fluorescent layer 2a including an organic fluorescent material and the second fluorescent layer 2b comprising a semiconductor nanocrystal.

A refraction-type LED ceiling lamp, especially a plate-type ceiling lamp which is used on an indoor ceiling, includes primarily a fiber light guide plate, a reflection surface of which is provided with multiple chip-shape reflection elements, distributed in arrays. A chip size of the reflection elements decreases gradually toward an entrance surface by a geometric series; whereas, a gap between the reflection elements increases gradually. A reflection curve of the reflection element allows light to be projected out uniformly and a required illumination angle to be achieved.

A curved backlight assembly includes a curved light guide plate (“LGP”), at least one light-emitting diode (“LED”), a printed circuit board (“PCB”) and a curved LED cover. The LGP includes a first side and a second side. The LED generates lights. The PCB has the LED mounted thereon to be disposed adjacent to the first side of the curved LGP. The curved LED cover receives the PCB to be bent along the first side of the curved LGP. Therefore, a generation of a hot-spot phenomenon may be prevented, so that it may emit uniform lights.

A light guide plate (32) used in a surface light source (30) for a liquid crystal display includes a light incidence surface (321) for receiving light beams, an emission surface (325) perpendicular to the light incidence surface for emitting the light, a bottom surface (323) opposite to the emission surface, and a plurality of grooves (327) and light reflection dots (329) formed on the bottom surface. The grooves are formed in a continuous band adjacent to the light incidence surface and extend perpendicular to the light incidence surface for scattering the light beams. The light guide plate provides highly uniform illumination for a liquid crystal display panel.

An optoelectronic semiconductor component applies to a surface mount component of an optoelectronic semiconductor. The optoelectronic semiconductor component has one or more semiconductor chip secured on a chip carrier. The chip carrier is a part of a lead frame, and another part of the lead frame is formed with an independent connection part as a contact of the semiconductor chip. An encapsulation body centers on the semiconductor chip and encircles part of the chip carrier and the independent connection part to form an annular ellipsoid for reflecting or receiving radiation of the semiconductor chip. The encapsulation body has a recess and a window part filling the recess. The window part is composed of materials for transforming the optical characteristics of the semiconductor chip. Part of the chip carrier and the independent connection part extend out the encapsulation body to form outside contacts as a SMT component.

A non-energized volatile material delivery system for emitting or releasing volatile materials to the atmosphere is provided. More specifically, delivery systems for delivering one or more volatile materials using a non-aerosol, non-energized volatile material delivery system via an evaporative surface device, without a source of heat, gas, or electrical current, are also provided.

The subject of this invention is a full-color display device based on III-Nitride semiconductors. The display device includes an array of micro-LEDs, monolithically integrated on a single chip of the epitaxially grown LED heterostructure, and flip-chip bonded to a silicon backplane of active matrix driving circuits, and color conversion layers. The LED substrate of the micro-LED array is removed, and the n-regions of the p-n or p-i-n heterojunctions of the micro-LEDs are connected via a thin n-type III-nitride epitaxial layer less than 20 μm thick. The surface of the thin n-type III-nitride epitaxial layer is covered with a layer of transparent / semi-transparent conductive material, forming the common n-type electrode of the micro-LED devices, rendering the vertical current flow in the micro-LED emitters. Each addressing and driving pixel of the active matrix driving circuits contains at least a switching transistor, a switching-driving transistor, and a latch register.

A light guiding plate unit which can emit uniform light of a predetermined polarization, a surface light source apparatus and a liquid crystal display apparatus are provided. A light guiding plate unit is provided with a light guiding plate which can guide light and has a first surface from which light is emitted and a diffraction grating which is provided on the first surface of the light guiding plate, and the diffraction grating is formed of a number of metal wires in straight lines which are aligned in a direction approximately perpendicular to the long axis of the metal wires, and the length w of the metal wires in the direction in which the number of metal wires are aligned is approximately 55% or more and approximately 85% or less of the spatial period of the diffraction grating. Thus, the ratio of the length w of the metal wires to the spatial period is set to 0.65 or higher and 0.85 or lower, and thus, it is possible to control the amount of transmission of light in a predetermined state of polarization through the diffraction grating formed on the first surface.

“Discharge delay” and “dependence of discharge delay on temperatures” are solved by improving a protective layer, thus a PDP can be driven at a low voltage. Furthermore, the PDP can display excellent images by suppressing “dependence of discharge delay on space charges.” Liquid-phase magnesium alkoxide (Mg (OR)2) or acetylacetone magnesium ate whose purity is 99.95% or more is prepared, and is hydrolyzed by adding a small amount of acids to the solution. Thus, a gel of magnesium hydroxide that is a magnesium oxide precursor is formed. Burning the gel in atmosphere at 700° C. or more produces powder containing MgO particles 16a-16d having the NaCl crystal structure with (100) and (111) crystal faces or with (100), (110) and (111) crystal faces. By pasting the powder on a dielectric layer 7 or a surface layer 8, the MgO powder 16 is formed so as to serve as the protective layer.

An optoelectronic semiconductor component applies to a surface mount component of an optoelectronic semiconductor. The optoelectronic semiconductor component has one or more semiconductor chip secured on a chip carrier. The chip carrier is a part of a lead frame, and another part of the lead frame is formed with an independent connection part as a contact of the semiconductor chip. An encapsulation body centers on the semiconductor chip and encircles part of the chip carrier and the independent connection part to form an annular ellipsoid for reflecting or receiving radiation of the semiconductor chip. The encapsulation body has a recess and a window part filling the recess. The window part is composed of materials for transforming the optical characteristics of the semiconductor chip. Part of the chip carrier and the independent connection part extend out the encapsulation body to form outside contacts as a SMT component.

A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order, and a plurality of exposed portions defined at an upper surface side of the semiconductor stacked layer body, the plurality of exposed portions respectively exposing a part of the n-type semiconductor layer, a p-side electrode arranged in a first region and electrically connected with an upper surface of the p-type semiconductor layer and, arranged at one corner above the p-type semiconductor layer in a plan view, and an n-side electrode electrically integrally connected to the plurality of exposed portions and arranged in a different region in a plan view. In a plan view, the semiconductor stacked layer body has a rectangular shape and the plurality of exposed portions includes, a plurality of first exposed portions arranged at substantially equal intervals along a side of the semiconductor stacked layer body and a plurality of second exposed portions arranged closer to the p-side electrode than the first exposed portions are to the p-side electrode. The plurality of second exposed portions include at least one second exposed portion which has a shortest distance to the first exposed portions, the shortest distance to the first exposed portions being longer than a shortest distance among the first exposed portions. The at least one second exposed portion also has a shortest distance to the p-side electrode shorter than the shortest distance among the first exposed portions.

A light-emitting diode 1 according to the present invention includes: a semiconductor light-emitting device 4 mounted on the surface of lead frames 2 and 3; and a transparent resin package 5 covering the front side of the semiconductor light-emitting device 4. A convex lens portion 8 for concentrating light emitted from the semiconductor light-emitting device 4 toward the front is provided in a surface part of the resin package 5. A circular flat portion 11 for diffusing light emitted from the semiconductor light-emitting device 4 toward the sides is provided in a part of the convex lens portion 8 intersecting the optical axis of the convex lens portion 8. Part of the convex lens portion 8 surrounding the circular flat portion 11 is a convex-lens side face. A recess 7 whose side wall is partly the convex-lens side face is provided to surround the convex lens portion.

“Discharge delay” and “dependence of discharge delay on temperatures” are solved by improving a protective layer, thus a PDP can be driven at a low voltage. Furthermore, the PDP can display excellent images by suppressing “dependence of discharge delay on space charges.” Liquid-phase magnesium alkoxide (Mg(OR)2) or acetylacetone magnesium ate whose purity is 99.95% or more is prepared, and is hydrolyzed by adding a small amount of acids to the solution. Thus, a gel of magnesium hydroxide that is a magnesium oxide precursor is formed. Burning the gel in atmosphere at 700° C. or more produces powder containing MgO particles 16a-16d having the NaCl crystal structure with (100) and (111) crystal faces or with (100), (110) and (111) crystal faces. By pasting the powder on a dielectric layer 7 or a surface layer 8, the MgO powder 16 is formed so as to serve as the protective layer.

In a III group nitride compound semiconductor wherein light that has been emitted in a light emitting portion formative layer is reflected by a multilayered reflection layer that is provided between the light emitting portion formative layer and sapphire substrate, it is desirable, for increasing the reflection efficiency of the light that has been emitted in the light emitting portion formative layer, that the multilayered reflection layer be provided at a position that is as near to the light emitting portion as possible. However, since the multilayered reflection layer is high in resistance value and also high in power consumption, locating the multilayered reflection layer near the light emitting portion formative layer results in that the resistance value in the vicinity of a relevant cathode electrode becomes increased. This raises the problem that emission of light occurs only in part of the light emitting portion formative layer. In the semiconductor light emitting device of the present invention, a superlattice layer is provided between the light emitting portion formative layer and the cathode electrode.

The invention discloses a screwdriver belonging to a hand tool and comprising a handle, a runner-shaped screwdriver head frame, a push rod and a pushing button assembly, wherein the push rod extends to an accommodating hole of the screwdriver head frame for pushing a screwdriver head in the accommodating hole to a screwdriver head sleeve on the handle until the screwdriver head extends out of the screwdriver head sleeve when the pushing button assembly is positioned on a first positioning part in the front of a sliding way on the handle, and the push rod is positioned at the rear side of the screwdriver head frame and drives the screwdriver head to the accommodating hole when the pushing button assembly is positioned at the rear part of the sliding way on the handle. The invention has less parts and a simple structure; the screwdriver head is replaced from the screwdriver head frame by only rotating the screwdriver head frame and pushing the push rod to move front and back without separating the screwdriver head frame from the handle, thus the screwdriver is simple and easy to operate; and the screwdriver head frame assembled on an installing position can be seen through a seam on the handle, therefore, the screwdriver head required using can be accurately transferred to correspond to the push rod and pushed out by using the push rod.

The invention belongs to the technical field of panel processing and discloses a full-automatic effective drilling machine for a furniture panel. The full-automatic effective drilling machine for the furniture panel is used for solving the problems that an existing panel drilling device is large in labor intensity and low in production efficiency due to discontinuous production. The full-automatic effective drilling machine for the furniture panel comprises a main stand, the main stand is provided with a feed cabin for holding a workpiece to be processed, the main stand before the feed cabin is provided with a push cylinder for pushing the workpiece to be processed, the main stand behind the feed cabin is provided with a drilling device for drilling the lateral surface of the workpiece to be processed, and the main stand at one side of the feed cabin is provided with a transverse push cylinder for pushing out the processed workpiece; the main stand at the other side of the feed cabin is provided with a storage device for recycling the processed workpiece, and the transverse push cylinder and storage device are respectively located at two sides of the feed cabin.

In a pointer instrument (1) having a pointer shaft (12) that deflects a pointer flag (10), the pointer flag (10) can be illuminated by means of a light source (14). For this purpose, the light source (14) is formed, for example, as a light-emitting polymer (13), which is applied between the pointer flag (10), which is formed at the same time as an electrode, and a further, transparent electrode (15), and emits light of any desired coloration under appropriate electrical excitation. The pointer flag (10) can assume any desired shape as the result of using such a light source (14) that can be shaped. In particular, multiple curvatures can be represented without differences in brightness occurring in this case.

A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.