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50results about How to "Increase the forward conduction current" patented technology

Schottky device with groove structure

The invention provides a Schottky device with a groove structure, comprising an anode electrode (1), a silicon dioxide layer (2), a P+ protection ring (3), a Schottky contact part (4), a P-type doping region (5), an N-type drift region (6), an N+ substrate region (7) and a cathode electrode (8); the groove structure is etched in the N-type drift region (6); the P-type doping region (5) is firstly formed in a groove; and then Schottky Metal sputtering is performed so as to form the Schottky contact part in the groove. The groove is etched in a drift region in an ordinary SBD structure to firstly form the P-type doping region, and then Schottky metal and the N-type drift region are sputtered to form the Schottky contact. Without sacrificing the reverse characteristic of the device, the forward conducting current of the Schottky device is improved. The implementing technique and the junction barrier control the JBS technique of a Schottky diode to be compatible, thus being easy to realize, and the requirements of a modern electronic system can be met better.
Owner:HARBIN ENG UNIV

GaN hetero-junction diode device and method for manufacturing same

The invention discloses a GaN hetero-junction diode device and a method for manufacturing the same. The GaN hetero-junction diode device comprises a substrate, a buffer layer, a channel layer, a potential barrier layer, a cap layer, a first Ohm anode, an Ohm cathode and a second Ohm anode. The buffer layer is positioned on the substrate; the channel layer is positioned on the buffer layer; the potential barrier layer is positioned on the channel layer, the potential barrier layer and the channel layer form a hetero-structure, and a two-dimensional electric channel is formed at a hetero-junction interface; the cap layer is positioned on the potential barrier layer; the first Ohm anode and the Ohm cathode are positioned on the upper side of the potential barrier layer and are arranged on two sides of the cap layer, and the first Ohm anode is in contact with the cap layer; the second Ohm anode is positioned on the first Ohm anode and the cap layer and is in Ohm metal contact with the cap layer. The GaN hetero-junction diode device and the method have the advantages that the problem of conflict between forward start voltage control and reverse electric leakage in the prior art can be solved, and a diode has characteristics of low start voltages and turn-on resistance and high reverse withstand voltages and forward turn-on currents.
Owner:GPOWER SEMICON

Silicon carbide junction barrier Schottky diode with trench structure

The invention relates to a silicon carbide junction barrier Schottky diode with a trench structure, and belongs to the technical field of semiconductor devices. According to the device, a Schottky contact region lower trench structure is introduced on the basis of the traditional JBS device structure, the size of a main junction edge peak electric field in the JBS region is reduced, the distribution of a main junction edge electric field during device breakdown is smoothened, the reverse withstand voltage of the device is improved, the forward conduction current of the device is also improved.Meanwhile, the structure can achieve a breakdown voltage value greater than that of the traditional SiC JBS device when the current is high and the Schottky contact region of the device is very wide,the reverse leakage current change is not obvious, and the problems such that the JBS device is poor in reverse breakdown voltage characteristic when the current is high and the Schottky contact region is very wide are solved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

SiC annular floating-point type P+ structured junction barrier Schottky diode and preparation method thereof

The invention discloses a Sic annular floating-point type P+ structured junction barrier Schottky diode. The Sic annular floating-point type P+ structured junction barrier Schottky diode comprises a Schottky contact region, a SiO2 isolation medium, an N- epitaxial layer, an N+ substrate region and an ohmic contact region, wherein the N- epitaxial layer is arranged on the N+ substrate region, the Schottky substrate region and the SiO2 isolation medium are arranged on the N- epitaxial layer, the ohmic contact region is arranged under the N+ substrate region, and the Sic annular floating-point type P+ structured junction barrier Schottky diode is characterized in that a plurality of floating-point type P+ injection regions are arranged between the N- epitaxial layer and the Schottky contact region. The Sic annular floating-point type P+ structured junction barrier Schottky diode has the advantages that an annular floating-point type P+ structure is introduced on the basis of a traditional junction barrier Schottky (JBS) device, the Schottky contact area of an active region is expanded, a conduction path is expanded, the positive conduction current of the device is increased, the conduction resistance is reduced, the negative leaked current is not obviously increased, and the problem that the positive conduction resistance and the negative breakdown voltage of the device are restricted with each other is solved.
Owner:JIANGSU JIEJIE MICROELECTRONICS

Floating junction silicon carbide SBD device with block-shaped groove and buried layer

The invention relates to a floating junction silicon carbide SBD device with a block-shaped groove and a buried layer. The floating junction silicon carbide SBD device is characterized by comprising a metal, a SiO2 spacer medium, a groove, a primary N- epitaxial layer, a P+ ion injection region, a secondary N- epitaxial layer, an N+ substrate region and an ohmic contact region, wherein the P+ ion injection region is located on the surface of the secondary N- epitaxial layer, the groove is flush with the P+ ion injection region up and down and the groove and the P+ ion injection region are shaped as the same; or a circular, hexagonal or square block-shaped buried layer is taken as a floating junction is flush with the P+ ion injection region up and down and shaped the same as the P+ ion injection region. The floating junction silicon carbide SBD device with the block-shaped groove and the buried layer has either the advantages of large Schottky contact area and large forward on current of a groove-shaped silicon carbide SBD or the advantage of high breakdown voltage of a floating junction silicon carbide SBD.
Owner:XIDIAN UNIV

Parasitic PIN(positive-intrinsic negative) diode in BiCMOS(Bipolar Complementary Metal Oxide Semiconductor) process, and manufacturing method thereof

The invention discloses a parasitic PIN(positive-intrinsic negative) diode in a BiCMOS(Bipolar Complementary Metal Oxide Semiconductor) process, comprising an N type region, an I type region and a P type region, wherein the I type region is composed of multiple N type collector injection regions formed in multiple adjacent active regions; the N type region is composed of an N type buried layer formed at the bottom of a shallow trench isolation oxide layer on the side of the I type region; the P type region is composed of multiple base region epitaxial layers and multiple P type buried layers; the base region epitaxial layers are respectively formed on the top surfaces of the active regions in the I type region; and each P type buried layer is formed on the bottom and side wall of the shallow trench isolation oxide layer in the I type region. The invention also discloses a manufacturing method of the parasitic PIN diode in the BiCMOS process. The invention realizes the aim of providing one more device choice for a circuit without additional process conditions, lower insertion loss and higher isolation are achieved, and the forward on state current of the device is increased and the insertion loss of the device improved while the device area is not increased.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Dual-conductive type discrete dual-rectangular grid-controlled source-drain variable resistance transistor and manufacturing method thereof

ActiveCN107799606AFunction can be switched at willChange the direction of the tunneling currentTransistorSemiconductor/solid-state device manufacturingMOSFETSub threshold
The invention relates to a dual-conductive type discrete dual-rectangular grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The transistor has a functionthat a P conductive type and an N conductive type can be freely switched and a bidirectional switch function, has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude and has the characteristics of a dual-rectangular grid discrete control structure. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent sub-threshold characteristic and switch characteristic are achieved by a Schottky barrier tunneling effect, and the static power consumption of the transistor is reduced; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and whichcannot be achieved by various existing transistor technologies are achieved, thus, a wider and versatile logic function is provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.
Owner:宿松新驱光电科技有限公司

Unit structure for reducing power consumption of phase-change memory and preparation method thereof

The invention relates to a unit structure for reducing power consumption of a phase-change memory and a preparation method thereof. The unit structure comprises an integrated circuit substrate, a first insulating medium layer, a driving diode, a transition layer, a second insulating medium layer, a bottom electrode, a third insulating medium layer, a phase-change material layer and a top electrode, wherein the first insulating medium layer is positioned on the integrated circuit substrate; the driving diode is surrounded by the first insulating medium layer and connected with the integrated circuit substrate; the transition layer is surrounded by the first insulating medium layer and positioned on the driving diode; the second insulating medium layer is positioned on the first insulating medium layer; the bottom electrode is surrounded by the second insulating medium layer and positioned on the transition layer; the third insulating medium layer is positioned on the second insulating medium layer; the phase-change material layer is surrounded by the third insulating medium layer and positioned on the bottom electrode; the top electrode is positioned on the phase-change material layer; and the heat conductivity of the transition layer is 0.01 to 20 W / m.K. The structure can effectively reduce the heat loss from the bottom electrode, improve the heating efficiency and improve the forward breakover current by heating the driving diode so as to achieve the purpose of reducing the power consumption of the phase-change memory.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Silicon carbide junction barrier schottky diode and manufacturing method thereof

A silicon carbide junction barrier Schottky diode, comprising: a silicon carbide N-type substrate; a silicon carbide N-type drift region, and a silicon carbide P-type layer, which are sequentially stacked on the upper surface of the silicon carbide N-type substrate; A plurality of grooves are vertically opened downward on the top of the silicon carbide P-type layer, and the depth d of the grooves satisfies d 2 <d<d 1 +d 2 , where d 1 is the thickness of the SiC N-type drift region, d 2 is the thickness of the silicon carbide P-type layer; the P+ injection layer is arranged at the bottom of the plurality of grooves; and the anode electrode is formed at least on the sidewalls of the plurality of grooves, and the silicon carbide junction barrier The special base diode takes advantage of the area of ​​the side wall to increase the current conduction area, increase the conduction current, save the chip area, and strengthen the pinch-off ability of exhaustion, reduce the leakage current during reverse bias, and improve the reverse bias device reliability.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Conductive-type adjustable source-drain variable resistance dual-side folded transistor and a manufacturing method thereof

ActiveCN107799607AFunction can be switched at willCan change the direction of tunneling currentTransistorSemiconductor/solid-state device manufacturingMOSFETSub threshold
The invention relates to a conductive-type adjustable source-drain variable resistance dual-side folded transistor and a manufacturing method thereof. The transistor has a function that a P conductivetype and an N conductive type can be freely switched and a bidirectional switch function and has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent sub-threshold characteristic and switch characteristic are achieved by a Schottky barrier tunneling effect, and the static power consumption of the transistor is reduced; and compared with a conventional tunneling field-effect transistor, the transistorhas the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and which cannot be achieved by various existing transistor technologies are achieved, thus, a wider and versatile logic function is provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.
Owner:宿松新驱光电科技有限公司

High-power-density onboard variable voltage rectifier

The invention relates to a high-power-density onboard variable voltage rectifier, which comprises an input connector, an input filter unit, a pulse transformator, a rectifying unit, an output filter unit, a heat radiation unit, a fault warning unit, an output connector and a casing, wherein the casing consists of a bottom plate, a panel and a cover hoop. Compared with an independent voltage stabilizing circuit, the high-power-density onboard variable voltage rectifier has the advantages that the device number is decreased, the system complexity is reduced, the system reliability is improved, and characteristics of low input current harmonic waves, stable output voltage and the like are realized. The high-power-density onboard variable voltage rectifier is suitable for being applied to middle-high-power rectifying occasions in aviation industry and national production.
Owner:江苏晟楠电子科技股份有限公司

Source-drain resistance-variable type H-shaped grid-controlled bidirectional switching transistor and manufacturing method thereof

The invention relates to a source-drain resistance-variable type H-shaped grid-controlled bidirectional switching transistor and a manufacturing method thereof. According to the invention, the transistor comprises an H-shaped grid electrode and structural features which are symmetric on the left side and the right side. The transistor is strong in grid control capability, and a metal source / draininterchangeable region can be controlled as a source region or a drain region through adjusting the electrode voltage of the source / drain interchangeable region. In this way, the direction of the tunneling current is changed. The invention has the advantages of low static power consumption, reverse leakage current, strong grid control capability, low sub-threshold swing and bidirectional switchingfunction. Compared with a common MOSFETs-type device, more excellent switching characteristics are achieved through the tunneling effect. Compared with a common tunneling field effect transistor, better switching characteristics are realized compared with a Schottky barrier transistor. Meanwhile, the doping is not needed in the source and drain regions, and the Schottky barrier is easy to form. The H-shaped grid electrode can better control the source and drain regions. Therefore, the transistor is suitable for popularization and application.
Owner:宿松新驱光电科技有限公司

Source drain variable-resistance rectangular grid controlled U-shaped channel bidirectional transistor and production method thereof

The invention relates to a source drain variable-resistance rectangular grid controlled U-shaped channel bidirectional transistor and a production method thereof. The element is provided with a rectangular grid electrode, has a transversely symmetrical structural feature, has high grid control capacity and can control a metal source drain interchangeable region as a source region or a drain regionthrough adjustment of source drain interchangeable electrode voltage, and the direction of a tunneling current is changed. The element has the advantages of low static power consumption, small reverse leakage current, high grid control capacity, low subthreshold swing and realization of a bidirectional switch function. Compared with a common MOSFETs-type element, a better switch characteristic isachieved by means of a tunneling effect; compared with a common tunneling field effect transistor, the bidirectional transistor has a source drain interchangeable bidirectional symmetrical switch characteristic; compared with a Schottky barrier transistor, the bidirectional transistor has a better switch characteristic; it is unnecessary to conduct blending in the source and drain regions, a Schottky barrier is easy to form, the rectangular grid electrode can better control the source and drain regions, and thus the bidirectional transistor is suitable for application and popularization.
Owner:山东光岳九州半导体科技有限公司

Bracket-shaped grid-control source drain resistive two-way switch transistor and manufacturing method thereof

The invention relates to a bracket-shaped grid-control source drain resistive two-way switch transistor and a manufacturing method thereof. According to the bracket-shaped grid-control source drain resistive two-way switch transistor, a device is structurally characterized by comprising bracket grids symmetrical left and right and has strong grid control capability and can control a metal source and drain interchangeable area as a source area or a drain area by adjusting a source and drain interchangeable electrode voltage to change the tunneling current direction. The bracket-shaped grid-control source drain resistive two-way switch transistor has the advantages of being low in static power and reverse leakage current, high in grid control capacity, low in subthreshold value swing and capable of achieving the two-way switching function. Compared with an ordinary MOSFETs type device, the tunneling effect is used for achieving a more excellent switching characteristic. Compared with anordinary tunneling field effect transistor, the bracket-shaped grid-control source drain resistive two-way switch transistor has the interchangeable source and drain two-way symmetrical switching characteristic with which the ordinary tunneling field effect transistor lacks, and therefore the bracket-shaped grid-control source drain resistive two-way switch transistor is suitable for application and popularization.
Owner:深圳市麦思浦半导体有限公司

High-integrated groove insulated gate tunneling bipolar enhancement transistor and manufacture method thereof

The invention relates to a high-integrated groove insulated gate tunneling bipolar enhancement transistor. Compared with MOSFETs or TFETs devices of the same size, a superior switching characteristic is realized by utilizing the extremely sensitive relationship between tunneling insulated layer impedance and an internal field; a superior positive conducting characteristic is realized by enhancing a tunneling signal by an emitter; compared with an ordinary plane structure, the situation that an emitter region 3, a base region 4 and a collector region 5 are successively arrayed in a horizontal direction is avoided, so that the area of a chip is reduced, and higher integration can be realized. In addition, the invention further provides a concrete manufacture method of the high-integrated groove insulated gate tunneling bipolar enhancement transistor. The transistor obviously improves the working characteristics of a nanoscale integrated circuit unit and is suitable for popularization and application.
Owner:SHENYANG POLYTECHNIC UNIV

Insulated gate tunneling bipolar transistor with U-shaped tunneling insulating layer and manufacturing process

The invention relates to an insulated gate tunneling bipolar transistor with a U-shaped tunneling insulating layer. A gate electrode tunneling current is generated by the U-shaped tunneling insulating layer, and the very sensitive mutual relation between impedance of the tunneling insulating layer and intensity of an internal electric field of the tunneling insulating layer is utilized to enable the U-shaped tunneling insulating layer to implement conversion between a high impedance state and a low impedance state in a very short electric potential change interval of a gate electrode, and thus, compared with the prior art, the insulated gate tunneling bipolar transistor can realize a better switching characteristic; by bipolar amplification, the positive conduction characteristic of a nanoscale insulated gate transistor is obviously improved. The invention also discloses a specific manufacturing method of the insulated gate tunneling bipolar transistor with the U-shaped tunneling insulating layer. Therefore, the working characteristic of a nanoscale integrated circuit unit is obviously improved, and the insulated gate tunneling bipolar transistor and the manufacturing method are suitable for being popularized and applied.
Owner:SHENYANG POLYTECHNIC UNIV

Epitaxial structure of silicon carbide device and preparation method thereof

A silicon carbide device epitaxial structure and a preparation method thereof relate to the technical field of semiconductor devices. The method comprises the following steps: growing a silicon carbide epitaxial layer on a substrate; depositing a first barrier layer on the silicon carbide epitaxial layer; etching the first barrier layer to form a first window exposing the silicon carbide epitaxial layer, and implanting N-type ions through the first window to form an N-type ion implantated region in the silicon carbide epitaxial layer; growing a continuous second barrier layer on the first barrier layer and in the first window, wherein the second barrier layer is enclosed in the first window to form a second window; etching the second barrier layer to expose the N-type ion implanted region at the second window, and reserving the second barrier layer on the side wall of the first window to form a side wall structure; and forming a P-type ion implanted region in the N-type ion implanted region through ion implantation, wherein the implantation depth of the P-type ion implanted region in the silicon carbide epitaxial layer is greater than that of the N-type ion implanted region in the silicon carbide epitaxial layer.
Owner:HUNAN SANAN SEMICON CO LTD

Source-drain resistive random bidirectional switching field effect transistor and manufacturing method thereof

The invention relates to a source-drain resistive random bidirectional switching field effect transistor and a manufacturing method thereof. The device has the structural characteristic of bilateral symmetry, and a metal source-drain interchangeable region is controlled to act as a source region or a drain region by adjusting the source-drain interchangeable electrode voltage so as to change the direction of schottky barrier tunneling current. The device has the advantages of low static power consumption reverse leakage current and low sub-threshold swing and can realize the bidirectional switching function. Compared with the common MOSFETs type device, the intensity of the schottky barrier tunneling effect is controlled by using the gate electrode to change the resistance value of the source region and the drain region so as to realize the better switching characteristic; compared with the tunneling field effect transistor, the bidirectional switching field effect transistor has the source-drain interchangeable bidirectional symmetrical switching characteristic which is not possessed by the common tunneling field effect transistor and higher forward conduction characteristic; andcompared with the common schottky barrier transistor, the bidirectional switching field effect transistor has the advantages of high technology implementation and better reverse switching characteristic so as to be suitable for popularization and application.
Owner:山东光岳九州半导体科技有限公司

AlGaN-based double-channel Schottky diode based on groove anode structure and preparation method

The invention relates to an AlGaN-based double-channel Schottky diode based on a groove anode structure and a preparation method. The diode comprises a substrate, a buffer layer, a channel layer, a first barrier layer, a superlattice layer, a second barrier layer and a GaN cap layer, an anode and a cathode; the substrate, the buffer layer, the channel layer, the first barrier layer, the superlattice layer, the second barrier layer and the GaN cap layer are sequentially stacked from bottom to top; a first conductive channel is formed between the channel layer and the first barrier layer; a second conductive channel is formed between the superlattice layer and the second barrier layer; the anode is arranged on the GaN cap layer; the bottom of the anode sequentially penetrates through the GaN cap layer and the second barrier layer; the anode is located in the superlattice layer; the anode and the superlattice layer form Schottky contact; the cathode is arranged on the GaN cap layer and surrounds the periphery of the anode; a distance exists between the cathode and the anode; and the cathode and the GaN cap layer form ohmic contact. According to the AlGaN-based double-channel Schottky diode based on the groove anode structure, the conductive channels are adopted, so that the electron concentration is improved, and the on-resistance is reduced.
Owner:XIDIAN UNIV

PIN device in bipolar complementary metal oxide semiconductor (BiCMOS) process

The invention discloses a PIN device in a bipolar complementary metal oxide semiconductor (BiCMOS) process. The PIN device is formed on a P-type silicon substrate; an active region is isolated through a shallow slot field oxide; and on an overlook surface, the layout structure of the PIN device is octagonal, polygonal over octagonal or round. On a cross section, the PIN device comprises an N-typeregion, an I-type region and a P-type region, wherein the N-type region consists of a shallow slot field oxide bottom of two sides of the active region and an N-type embedded layer in a transverse distance away from the active region and is led out through deep hole contact; the I-type region consists of an N-type collector implantation region formed in the active region; and the P-type region consists of an intrinsic base region epitaxial layer which is formed on the surface of the active region and doped with P-type impurities. The series resistance of the device can be effectively reduced,the forward conduction current of the device is improved, the current of the device is more uniform in each direction, and the properties of the device are improved.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

A kind of unidirectional conductive withstand voltage device and its manufacturing method

The invention discloses a one-way conductive pressure device with characteristics including: an N well is formed at a left side of an upper part of a P-type silicon and N+ injection layers are formed above the N well; more than two serially connected MOS structures including the P-type silicon, the N+ injection layers, gate oxide layers and gates are formed at a right side of the upper part of the P-type silicon; the gate oxide layers are formed on the P-type silicon; the N+ injection layers are formed at an upper part of the P-type silicon and beneath two sides of the gate oxide layers; and the gates are arranged on the gate oxide layers, wherein a gate oxide layer of a leftmost MOS structure is adjacent to the N well, and the gate of each MOS structure is connected with adjacent N+ injection layers through mental wires. The invention also discloses a manufacturing method for the one-way conductive pressure device The invention also discloses a manufacturing method for the one-way conductive pressure device Compared with traditional high-voltage diodes, the one-way conductive pressure device is capable of providing higher forward-direction conduction current while providing the same breakdown-resistant voltage.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Double-selection conductive type dual-bracket grid-controlled source-drain variable resistance transistor and manufacturing method thereof

The invention relates to a double-selection conductive type dual-bracket grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The device has structural characteristics of folded auxiliary grid, dual-bracket grid and a left side and a right side which are symmetric to each other, the function that a P conductive type and an N conductive type can be freelyswitched can be achieved, and the transistor has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent switch characteristic is achieved by a tunneling effect; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain can be symmetric to each other and can be exchanged and which is not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and that cannot be achieved by the prior art is achieved, thus, wider and more versatile logic functions are provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.
Owner:宿松新驱光电科技有限公司

Silicon carbide PiN diode with buried layer structure

A silicon carbide PiN diode with a buried layer structure comprises a cathode, an N-type silicon carbide substrate, an N-type silicon carbide epitaxial layer, a P-type region and a metal anode which are sequentially arranged from bottom to top. An N-type buried layer and / or a P-type buried layer are / is further arranged in the N-type silicon carbide epitaxial layer. The N-type buried layer is located above the N-type silicon carbide substrate and used for enhancing the electric field at the boundary of the N-type silicon carbide substrate and the N-type silicon carbide epitaxial layer. The P-type buried layer is located below the P-type region and used for enhancing the electric field at the boundary of the P-type region and the N-type silicon carbide epitaxial layer. According to the invention, the P-type buried layer is introduced to enhance the electric field at the boundary of the P-type region and the N-type silicon carbide epitaxial layer, and the N-type buried layer is introducedto enhance the electric field at the boundary of the N-type silicon carbide substrate and the N-type silicon carbide epitaxial layer, so that the conductivity modulation effect is enhanced, the forward conduction current of the silicon carbide PiN diode is improved, and the forward conduction performance of the silicon carbide PiN diode is improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Highly integrated grooved insulated gate tunneling bipolar enhancement transistor and its manufacturing method

The invention relates to a highly integrated grooved insulating gate tunneling bipolar enhancement transistor. Compared with MOSFETs or TFETs devices of the same size, the extremely sensitive relationship between the impedance of the tunneling insulating layer and its internal field strength is used to realize excellent switching characteristics; Extremely enhances the tunneling signal to achieve excellent forward conduction characteristics; compared with the ordinary planar structure, it avoids the sequential arrangement of the emitter region 3, the base region 4 and the collector region 5 along the horizontal direction, thus saving the chip area and realizing more High level of integration. In addition, the invention also proposes a specific manufacturing method of a highly integrated recessed insulated gate tunneling bipolar enhancement transistor. The transistor significantly improves the working characteristics of the nanoscale integrated circuit unit and is suitable for popularization and application.
Owner:SHENYANG POLYTECHNIC UNIV

Low-voltage-drop Schottky rectifier tube

The invention provides a low-voltage-drop Schottky rectifier tube which comprises an n-type substrate, a cathode metal layer is arranged below the n-type substrate, an n-type buffer layer and an n-type drift layer are sequentially stacked on the n-type substrate, a Schottky barrier metal layer and an annular first passivation layer are arranged on the n-type drift layer, and an anode metal layer is arranged on the Schottky barrier metal layer. An annular second passivation layer is arranged on the anode metal layer; a first p-type embedded layer, a plurality of second p-type embedded layers and a plurality of third p-type embedded layers which are not in contact with one another are arranged in the n-type drift layer; the Schottky barrier metal layer is internally provided with a first lower convex part connected to the first p-type embedded layer, and the Schottky barrier metal layer is internally provided with a plurality of second lower convex parts connected to the second p-type embedded layers respectively. According to the invention, a plurality of p-type embedded layers are arranged in the n-type drift layer, the forward voltage drop is reduced, and the Schottky barrier metal layer is provided with a structure which is partially arched upwards, so that the forward conduction current can be improved.
Owner:东莞市中之电子科技有限公司

A parasitic n-i-p type pin device structure and manufacturing method in a bicmos process

The invention discloses a parasitic N-I-P type PIN device structure in a BiCMOS (bipolar complementary metal oxide semiconductor) process. The parasitic N-I-P type PIN device structure is characterized in that an active area is formed above a P type substrate, a P type embedded layer is formed in the active area, a plurality of shallow trench isolators are formed above the P type embedded layer, polycrystalline silicon layers are formed above the shallow trench isolators, emitting areas are formed above the active area, the emitting areas and the polycrystalline silicon layers are alternately arranged, the emitting areas are connected with metal wires in a leading-out manner through contact holes, the P type embedded layer is connected with a metal wire in a leading-out manner through a deep contact hole, and titanium or tin and tungsten are arranged in the deep contact hole. The invention further discloses a manufacturing method of the parasitic N-I-P type PIN device structure in the BiCMOS process. By the aid of the parasitic N-I-P type PIN device structure and the manufacturing method thereof, forward breakover current and the effective area of a PIN device can be increased, and insertion loss of the PIN device is reduced.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

A source-drain resistance variable bidirectional switch field effect transistor and its manufacturing method

The invention relates to a source-drain resistive random bidirectional switching field effect transistor and a manufacturing method thereof. The device has the structural characteristic of bilateral symmetry, and a metal source-drain interchangeable region is controlled to act as a source region or a drain region by adjusting the source-drain interchangeable electrode voltage so as to change the direction of schottky barrier tunneling current. The device has the advantages of low static power consumption reverse leakage current and low sub-threshold swing and can realize the bidirectional switching function. Compared with the common MOSFETs type device, the intensity of the schottky barrier tunneling effect is controlled by using the gate electrode to change the resistance value of the source region and the drain region so as to realize the better switching characteristic; compared with the tunneling field effect transistor, the bidirectional switching field effect transistor has the source-drain interchangeable bidirectional symmetrical switching characteristic which is not possessed by the common tunneling field effect transistor and higher forward conduction characteristic; andcompared with the common schottky barrier transistor, the bidirectional switching field effect transistor has the advantages of high technology implementation and better reverse switching characteristic so as to be suitable for popularization and application.
Owner:山东光岳九州半导体科技有限公司
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