Silicon carbide junction barrier schottky diode and manufacturing method thereof

Abstract

A silicon carbide junction barrier Schottky diode, comprising: a silicon carbide N-type substrate; a silicon carbide N-type drift region, and a silicon carbide P-type layer, which are sequentially stacked on the upper surface of the silicon carbide N-type substrate; A plurality of grooves are vertically opened downward on the top of the silicon carbide P-type layer, and the depth d of the grooves satisfies d 2 <d<d 1 +d 2 , where d 1 is the thickness of the SiC N-type drift region, d 2 is the thickness of the silicon carbide P-type layer; the P+ injection layer is arranged at the bottom of the plurality of grooves; and the anode electrode is formed at least on the sidewalls of the plurality of grooves, and the silicon carbide junction barrier The special base diode takes advantage of the area of ​​the side wall to increase the current conduction area, increase the conduction current, save the chip area, and strengthen the pinch-off ability of exhaustion, reduce the leakage current during reverse bias, and improve the reverse bias device reliability.

Description

technical field [0001] The invention relates to the field of semiconductor power devices, in particular to a silicon carbide junction barrier Schottky diode and a manufacturing method thereof. Background technique [0002] With the development of modern technology, people continue to put forward higher requirements for semiconductor power devices in terms of volume, reliability, withstand voltage, and power consumption. Traditional silicon devices are limited [0003] In terms of the characteristics of the material itself, it is getting closer and closer to its theoretical limit, and people urgently need to explore new materials other than silicon materials. Silicon carbide has a series of advantages that traditional silicon materials do not have, such as higher breakdown electric field, higher thermal conductivity, and larger forbidden band width, making silicon carbide more suitable for high-voltage power applications. [0004] The silicon carbide junction barrier contro...

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Problems solved by technology

And in the reverse depletion, the pinch-off occurs laterally, and the pinch-off ability of depletion is not high

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