Unit structure for reducing power consumption of phase-change memory and preparation method thereof

Abstract

The invention relates to a unit structure for reducing power consumption of a phase-change memory and a preparation method thereof. The unit structure comprises an integrated circuit substrate, a first insulating medium layer, a driving diode, a transition layer, a second insulating medium layer, a bottom electrode, a third insulating medium layer, a phase-change material layer and a top electrode, wherein the first insulating medium layer is positioned on the integrated circuit substrate; the driving diode is surrounded by the first insulating medium layer and connected with the integrated circuit substrate; the transition layer is surrounded by the first insulating medium layer and positioned on the driving diode; the second insulating medium layer is positioned on the first insulating medium layer; the bottom electrode is surrounded by the second insulating medium layer and positioned on the transition layer; the third insulating medium layer is positioned on the second insulating medium layer; the phase-change material layer is surrounded by the third insulating medium layer and positioned on the bottom electrode; the top electrode is positioned on the phase-change material layer; and the heat conductivity of the transition layer is 0.01 to 20 W/m.K. The structure can effectively reduce the heat loss from the bottom electrode, improve the heating efficiency and improve the forward breakover current by heating the driving diode so as to achieve the purpose of reducing the power consumption of the phase-change memory.

Description

[0001] technical field [0002] The invention belongs to the technical field of microelectronics, and in particular relates to a unit structure for reducing power consumption of a phase-change memory and a preparation method thereof. Background technique [0003] Phase Change Memory (PCM) has been studied for 40 years so far, but due to the constraints of processing technology and the two factors that can fully reflect its superiority only when the size of the storage unit reaches the nanometer scale, in 1970 to 1999 In the past 30 years, the progress of phase change memory has been slow. As the preparation technology and process of the semiconductor industry reach the submicron or even nanometer scale, the size of the phase change material in the device can be reduced to the nanometer level, and the voltage and power consumption required for the phase change are greatly reduced, which can be compared with the existing Only when CMOS is matched, the advantages of phase change...

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Problems solved by technology

Currently commonly used heating electrode materials include W (IEDM, 897, 2003), TiN (IEDM, 901, 2003), TiON (Jpn. J. Appl. Phys., 43 (8A): 5243, 2004), etc., through low heat The introduction of conductivity el...

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