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AlGaN-based double-channel Schottky diode based on groove anode structure and preparation method

A Schottky diode and anode structure technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as limiting the application of GaN Schottky diodes and reducing the mobility of AlGaN/GaN heterostructures

Pending Publication Date: 2021-05-07
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The SBD device directly using the AlGaN alloy channel is greatly reduced due to the influence of alloy disorder scattering, which greatly reduces the mobility of the AlGaN / GaN heterostructure, which greatly limits the application of GaN Schottky diodes in the field of power electronics.

Method used

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  • AlGaN-based double-channel Schottky diode based on groove anode structure and preparation method
  • AlGaN-based double-channel Schottky diode based on groove anode structure and preparation method
  • AlGaN-based double-channel Schottky diode based on groove anode structure and preparation method

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Embodiment 1

[0040] See figure 2 , figure 2It is a structural schematic diagram of an AlGaN-based dual-channel Schottky diode based on a recessed anode structure provided by an embodiment of the present invention. As shown in the figure, the AlGaN-based double-channel Schottky diode based on the recessed anode structure of this embodiment includes: a substrate 1, a buffer layer 2, a channel layer 3, a first barrier layer 4, a superlattice layer 5, second barrier layer 6, GaN cap layer 7, anode 8 and cathode 9. Wherein, the substrate 1 , the buffer layer 2 , the channel layer 3 , the first barrier layer 4 , the superlattice layer 5 , the second barrier layer 6 and the GaN cap layer 7 are stacked sequentially from bottom to top. The anode 8 is disposed on the GaN cap layer 7 , and its bottom passes through the GaN cap layer 7 and the second barrier layer 6 in turn, and is located in the superlattice layer 5 . The cathode 9 is disposed on the GaN cap layer 7 and surrounds the anode 8 , a...

Embodiment 2

[0057] This embodiment provides a method for manufacturing an AlGaN-based dual-channel Schottky diode based on a recessed anode structure, which is applicable to the AlGaN-based dual-channel Schottky diode based on a recessed anode structure in the above embodiment. See image 3 , image 3 It is a flowchart of a method for preparing an AlGaN-based dual-channel Schottky diode based on a recessed anode structure provided by an embodiment of the present invention. As shown in the figure, the method of this embodiment includes:

[0058] S1: AlGaN buffer layer, AlGaN channel layer, AlN barrier layer, superlattice layer, AlGaN barrier layer and GaN cap layer are epitaxially grown on a P-type doped Si substrate in sequence to obtain a Si-based GaN epitaxial material, wherein , the superlattice layer includes GaN layers and AlN layers periodically arranged from bottom to top;

[0059] S2: Etching on the Si-based GaN epitaxial material to form mutually isolated MESA active regions; ...

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Abstract

The invention relates to an AlGaN-based double-channel Schottky diode based on a groove anode structure and a preparation method. The diode comprises a substrate, a buffer layer, a channel layer, a first barrier layer, a superlattice layer, a second barrier layer and a GaN cap layer, an anode and a cathode; the substrate, the buffer layer, the channel layer, the first barrier layer, the superlattice layer, the second barrier layer and the GaN cap layer are sequentially stacked from bottom to top; a first conductive channel is formed between the channel layer and the first barrier layer; a second conductive channel is formed between the superlattice layer and the second barrier layer; the anode is arranged on the GaN cap layer; the bottom of the anode sequentially penetrates through the GaN cap layer and the second barrier layer; the anode is located in the superlattice layer; the anode and the superlattice layer form Schottky contact; the cathode is arranged on the GaN cap layer and surrounds the periphery of the anode; a distance exists between the cathode and the anode; and the cathode and the GaN cap layer form ohmic contact. According to the AlGaN-based double-channel Schottky diode based on the groove anode structure, the conductive channels are adopted, so that the electron concentration is improved, and the on-resistance is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an AlGaN-based double-channel Schottky diode based on a recessed anode structure and a preparation method. Background technique [0002] A GaN Schottky barrier diode (SBD for short) is an important GaN power device. Since GaN is a multisub device, the minority carrier charge storage effect is very weak. When the device is turned off, there is only a displacement current caused by the junction capacitance. Compared with the reverse recovery storage charge generated by the p-n junction diode, the charge transferred by the displacement current is almost can be ignored, thus reducing the switching loss of the SBD device. [0003] Because GaN SBD devices have so many advantages, a lot of research has been done on them. In order to realize GaN SBD devices, there are many manufacturing methods in the industry. The more commonly used method is to deposit a cat...

Claims

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Application Information

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IPC IPC(8): H01L29/40H01L29/20H01L29/06H01L29/872H01L21/329
CPCH01L29/40H01L29/2003H01L29/0684H01L29/872H01L29/66143
Inventor 张苇杭付李煜张进成张金风刘茜赵胜雷黄韧郝跃
Owner XIDIAN UNIV
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