Dual-conductive type discrete dual-rectangular grid-controlled source-drain variable resistance transistor and manufacturing method thereof

Abstract

The invention relates to a dual-conductive type discrete dual-rectangular grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The transistor has a functionthat a P conductive type and an N conductive type can be freely switched and a bidirectional switch function, has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude and has the characteristics of a dual-rectangular grid discrete control structure. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent sub-threshold characteristic and switch characteristic are achieved by a Schottky barrier tunneling effect, and the static power consumption of the transistor is reduced; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and whichcannot be achieved by various existing transistor technologies are achieved, thus, a wider and versatile logic function is provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a dual-conduction type discrete double rectangular gate-controlled source-drain resistive transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] When ordinary tunneling field effect transistors are used as switching devices, the tunneling mechanism of carriers is used, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs type devices. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymm...

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