Silicon carbide junction barrier Schottky diode with trench structure
A junction barrier Schottky, silicon carbide technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced breakdown voltage of devices, deterioration of reverse breakdown characteristics, etc., to reduce electric field spikes , the effect of increasing forward conduction current and increasing width
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[0035] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0036] Such as figure 2 As shown, a silicon carbide junction barrier Schottky diode with a trench structure provided by the first embodiment of the present invention includes an ohmic contact electrode 6, a silicon carbide N+ substrate 1, a silicon carbide N- epitaxial layer 2, and SiO2 Isolation dielectric 7, Schottky contact electrode 5, multiple P+ injection regions 3 and multiple P+ field limiting rings 8;
[0037] Ohmic contact electrode 6, silicon carbide N+ substrate 1 and silicon carbide N- epitaxial layer 2 are sequentially stacked from bottom to top; multiple P+ implantation regions 3 are arranged at intervals on the upper layer of silicon carbide N- epitaxial layer 2; multiple P+ fields The confinement ...
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