30results about How to "Improve time characteristics" patented technology

The invention discloses a composite structure based on Ce: YAG (yttrium aluminum garnet) wafer. The composite structure comprises a Ce: YAG wafer and a red-light emitting layer fixed on the Ce: YAG wafer. The invention also discloses a production method for the composite structure based on the Ce: YAG wafer simultaneously, for forming an optical composite structure capable of realizing light emitting in a broadband from green light to red light. The composite structure and the production method are widely applied in the fields of detection equipment and illumination devices.

The invention provides a double-focusing electrode for a photomultiplier and the photomultiplier. The double-focusing electrode comprises a bowl-shaped automatic expansion focusing electrode and a secondary focusing electrode. The bowl-shaped automatic expansion focusing electrode comprises an annular bottom plate, and a rotating shaft, an arc-shaped blade, a torsional spring and a triggering device which are arranged on the bottom plate; the secondary focusing electrode is an annular metal electrode; wherein the base is fixed on the annular bottom plate; an insulating assembly is arranged between the secondary focusing electrode and the bottom plate; and the secondary focusing electrode is used for forming insulation between the secondary focusing electrode and a bowl-shaped focusing electrode formed by the arc-shaped blades, is also connected with an electric connecting sheet, penetrates through the insulating assembly and the bottom plate, extends to the lower part of the bottom plate to lead out the secondary focusing electrode, and is electrically connected to a lead system of the photomultiplier. Through the implementation of the invention, the photoelectron collection and detection efficiency can be improved.

The invention provides an electronic transformer calibrator traceability method and system. The method comprises the following steps: a digital multimeter collects analog signals and converts the analog signals into a digital message; an upper computer carries out virtual reconstruction on the digital messages and then carries out error information superposition to form a reconstructed message; a message controller carries out timing control according to the reconstructed message; a tested electronic transformer calibrator collects the analog signals and the reconstructed message sent by the message controller and generates error information; and a comparison is made between the error information generated by the tested electronic transformer calibrator and the error information superposed by the upper computer to obtain test errors. The sample data of the digital multimeter is subjected to virtual reconstruction to enable the output digital message to be same with the message output by an actual electronic transformer merging unit, and by comparing the error information generated by the tested electronic transformer calibrator and the error information superposed by the upper computer, the test errorsof the tested electronic transformer calibrator is obtained; and therefore, full traceability work is finished.

The invention discloses a composite structure based on a Ce:YAG wafer, comprising a Ce:YAG wafer and a red light-emitting layer fixed on the Ce:YAG wafer, and also discloses the composition of the composite structure based on a Ce:YAG wafer The manufacturing method forms a compound optical structure capable of realizing wide-band light emission from green light to red light, and has wide applications in the fields of detection equipment and lighting devices.

The invention provides a storage method for determining the data source priority by adopting retrieval tables. The method comprises the following steps that the priorities of set data bits in data source group marking sequences and data bits in data source marking sequences are set to be sequentially reduced from the left side to the right side, and a first priority inquiry retrieval table and a second priority inquiry retrieval table are respectively built in a one-hot mode according to the value exhaustivity in the data source group marking sequences and the data source marking sequences; when data storage requests exist in a data passage, firstly, the first priority retrieval table is inquired according to the values in the data source group marking sequences to obtain a data source group with the highest priority; then, the second priority inquiry retrieval table is inquired according to the values in the data source marking sequences corresponding to the data source group to obtain a data source passage with the highest priority. The storage method provided by the invention has the advantages that resources stored in a memory are used for building a priority table, a traditional multi-condition branched judging method is replaced in a table look-up retrieval mode, and the logic depth of the original look-up mode is simplified through adopting a multi-stage grouped retrieval mode.

The method involves performing rolling torque-pre control of a drive by a torque-forming current (I), which is supplied to the drive, for reducing a rotational speed undershoot of the drive, where the rotational speed undershoot is caused by an anticipated load torque acting on the drive. The load torque caused by a rolling process is precontrolled in the drive. The current is stepwise increased for precontrolling the drive. The load torque is corrected by evaluation of rotational speed or torque actual values.

The invention discloses an automatic expansion focusing electrode and a photomultiplier tube based on the automatic expansion focusing electrode. The photomultiplier tube includes a high-vacuum sealed shell, an auto-expandable focusing electrode, a photocathode with high quantum efficiency, an electron multiplication system, a connection and a lead system. The high-vacuum sealed casing as the outer shell of the photomultiplier tube is mainly used for sealing and as the base of other film layers. The self-expanding focusing electrode is used as the electron collector of the photomultiplier tube, including the bottom plate, expansion blades and automatic triggering mechanism. A high quantum efficiency photocathode is located in the upper region of the high vacuum sealed enclosure and converts incident photons into electrons. The electron multiplication system is located under the self-expanding focusing pole, which amplifies the electrons collected by the focusing pole and leads them out through the lead system. During the packaging process of the photomultiplier tube, the auto-expanding focusing pole will trigger the trigger mechanism, so as to realize the expansion action of the auto-expanding focusing pole and realize the enlargement of the radial dimension of the focusing pole.

The invention discloses a circuit for converting a thermometer code into a binary code circuit for a time-to-digital converter. The circuit comprises: a LUT screening circuit and an RAM storage circuit, the thermometer code is used as an input signal, which is accessed to the LUT screening circuit, an LUT unit in the screening circuit performs negation on upper 5 bits of the input signal, adds a negation result to the lowest bit of the input signal to obtain an output signal, and accesses the output signal to a reading enable end of the RAM storage circuit as a control signal; and when the reading enable end is pulled up, the binary code in the corresponding RAM storage circuit is read out at the next clock rising edge, so that the conversion of the thermometer code into the binary code isrealized. The circuit disclosed by the invention solves the bubbling problem existing in a decoding process of the time-to-digital converter based on FPGA, and improves the overall performance of theFPGA type time-to-digital converter.

The invention discloses an automatic expansion focusing electrode for a photomultiplier tube and a photomultiplier tube, wherein the automatic expansion focusing electrode comprises an expansion support rod, a metal cloth, a fixing mechanism, a rotating shaft and a touch spring. The expansion support rod, the rotating shaft and the touch spring piece are one-to-one corresponded, and are arranged around the fixing mechanism; A plurality of expansion struts rotatably mounted along an edge of the fixing mechanism and about the rotational axis; The metal cloth is arranged around the central axis of the fixing mechanism in an initial state of wrinkle folding, and each expansion rod is fixedly connected with the wrinkle edge position of the metal cloth, so that the metal cloth can be unfolded with the movement of the expansion rod to enter an expanded state. The automatic expansion focusing pole of the invention can realize the expansion action of the automatic expansion focusing pole and realize the expansion of the radial dimension of the focusing pole.

The invention discloses a method for detecting a Spiking corner point based on a grayscale image, which belongs to the technical field of image processing and focuses on solving the problems of low corner point detection accuracy, complicated operation and slow detection speed in the prior art. The present invention mainly utilizes the characteristics of the Spiking neural network to invent a detection template to detect the corner information of the image, and determine the corner of the gray image by the characteristic that the voltage value of the detection template reaches the minimum when the voltage value is at the corner. points, the present invention can better detect the corner points of the image, and extract the time information and spatial information of the corner points of the grayscale image. The application scenarios of the present invention are mainly in image corner detection, character object tracking and recognition, motion estimation and other computer scenarios where corner information is applied. Involves Spiking neural network, machine learning.

The invention discloses a planar power metal oxide semiconductor (MOS) device, which comprises a P-type trap layer positioned in a P-type substrate layer and an N-type lightly doped layer, wherein the P-type trap layer and the N-type lightly doped layer are adjacent in the horizontal direction to form a PN junction; a source region is positioned in the P-type trap layer; a drain region is positioned in the substrate layer; a gate-oxide layer is arranged on the P-type trap layer positioned between the source region and the N-type lightly doped layer; and a gate region is arranged on the gate-oxide layer. The planar power MOS device is characterized in that at least two grooves are formed between the source region and the N-type lightly doped layer and on the upper part of the P-type trap layer; the etching depth of the groove close to the source region is smaller than that of the groove close to the N-type lightly doped layer; and the etching depth of the plurality of grooves is increased sequentially from the source region to the N-type lightly doped layer. Therefore, breakdown voltage resistance is improved, the specific on-resistance of the device is reduced, the response time and frequency characteristic are improved, the whole performance is improved, and the size is reduced.