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A kind of composite structure and manufacturing method based on ce:yag chip

一种复合结构、制作方法的技术，应用在光学领域，能够解决效用降低、波长单一等问题，达到成本低、时间特性好、显色效果好的效果

Active Publication Date: 2016-09-28
KUSN KAIWEI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Ce:YAG chip has many excellent properties, but the main luminous peak is at 525nm-550nm, the peak width is about 65-70nm, and the wavelength is relatively single. In some occasions that require long-wavelength detection or illumination, its effectiveness is reduced.

Method used

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  • A kind of composite structure and manufacturing method based on ce:yag chip
  • A kind of composite structure and manufacturing method based on ce:yag chip
  • A kind of composite structure and manufacturing method based on ce:yag chip

Examples

Experimental program
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Effect test

Embodiment 1

[0031] Eu:Y Plating by Sputtering 2 o 3 film, first prepare powdered Eu:Y 2 o 3 , wherein the molar concentration of Eu ions is 0.2%, and it is prepared into a bulk target by pressing method, and Eu:Y 2 o 3 The target is fixed on the cathode of the coating machine, and the Ce:YAG wafer (wherein the molar concentration of Ce ions is 0.3%) is cut and polished into the required size by the pulling method, and the cleaned Ce:YAG wafer is Fix it on the anode facing the target surface, then pump the system to high vacuum (10 -3 Pa) and then filled with argon gas of 5 Pa, apply a voltage between the cathode and the anode, start the coating, vacuumize after the coating is completed, then fill in nitrogen for cold cutting, and finally get the Eu:Y coating 2 o 3 Ce:YAG wafer composite light-emitting structure of red light-emitting film.

[0032] figure 2 Plating Eu:Y for Example 1 2 o 3 The emission spectrum of the film composite structure, as can be seen from the figure, the...

Embodiment 2

[0034] Glue-coating method to plate red phosphor film, add 0.05% by weight red phosphor to the silica gel, stir evenly, and evenly cover the Ce:YAG wafer by spraying (wherein the molar concentration of Ce ions is 0.3%, The surface of the Ce:YAG wafer is prepared by a temperature gradient method, and then baked at 120° C. for 3 hours. After the glue is cured, a Ce:YAG wafer composite light-emitting structure coated with a red phosphor film is obtained.

[0035] image 3 It is the emission spectrum diagram of the combination structure of the red-light phosphor coating film in the glue-coating mode of embodiment 2. It can be seen from the figure that the combined structure of the glue-coating red phosphor powder film coating has an emission spectrum with a width of 500nm to 750nm, and can realize the emission spectrum from green to green. Luminescence in the light to red band.

Embodiment 3

[0037] Bond the Eu:YAG wafer (where the molar concentration of Eu ions is 0.2%, prepared by the Kyroplasty method) and the Ce:YAG wafer (where the molar concentration of Ce ions is 0.5%, which is prepared by the temperature gradient method) with silica gel. Surface polishing of Ce:YAG wafer and Eu:YAG wafer to make it have good smoothness and flatness, coating the surface of Ce:YAG wafer with silica gel, covering with Eu:YAG wafer, and baking at 100°C for 3 hours, Then slowly cool down to room temperature to form a Ce:YAG and Eu:YAG wafer composite light-emitting structure.

[0038] Figure 4 It is the emission spectrum diagram of the combined structure of silica gel bonded with Eu:YAG wafer in Example 3. It can be seen from the figure that the combined structure of silica gel bonded with Eu:YAG wafer has an emission spectrum with a width of 500nm to 700nm, which can realize the emission spectrum from green light to red light. bands of glow.

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Abstract

The invention discloses a composite structure based on a Ce:YAG wafer, comprising a Ce:YAG wafer and a red light-emitting layer fixed on the Ce:YAG wafer, and also discloses the composition of the composite structure based on a Ce:YAG wafer The manufacturing method forms a compound optical structure capable of realizing wide-band light emission from green light to red light, and has wide applications in the fields of detection equipment and lighting devices.

Description

technical field [0001] The invention relates to the field of optics, in particular to a composite structure and a manufacturing method based on a Ce:YAG wafer. Background technique [0002] Yttrium aluminum garnet doped with cerium ions (Ce:Y 3 Al 5 o 12 Or Ce:YAG) crystal is a new type of inorganic scintillation crystal that appeared in the 1980s. Due to its advantages such as high light output and fast time decay constant, it is widely used in high energy physics, nuclear physics, imaging nuclear medicine, industrial online detection and lighting, etc. The field has broad application prospects. In addition to relatively high light output (20000Ph / MeV) and fast time decay (88ns / 300ns), Ce:YAG scintillation crystals also have a good ability to distinguish γ-rays and α-particles from light pulses. The 550nm fluorescence that is effectively coupled by the photodiode can be excited by the blue light in the 435nm-470nm band and synthesize white light with it, and has excelle...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/80
CPCC09K11/7774G01T1/2023
Inventor 曹顿华梁月山马可军
Owner KUSN KAIWEI ELECTRONICS
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