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37results about How to "Improve alignment tolerance" patented technology

Method for preparing evanescent wave coupling type single carrier traveling wave photoelectrical detector

The invention provides a method for preparing an evanescent wave coupling type single carrier traveling wave photoelectrical detector. The method comprises the following steps of: orderly growing layers from an indium-phosphorus stress buffer layer to an InGaAs contact layer on a substrate; growing a layer of silicon oxide masking film on the InGaAs contact layer; etching both sides of the silicon oxide masking film, etching both sides of a silicon oxide masking strip, and obtaining a deep ridge structure; corroding partial deep ridge structure by a wet method, and forming an incident window region; forming N-shaped metal ohmic contacts on both sides of the deep ridge structure by a lift-off method; etching all layers outside the outer side edge of the N-shaped metal ohmic contact on the substrate; keeping all layers on the side of the incident window region, and forming a mesa structure on the substrate; preparing a signal electrodes of the titanium traveling wave electrode structure on the part extended from the upper surface of the deep ridge structure to the substrate by an inclined mesa; preparing a grounding electrode of the titanium traveling wave electrode structure on the part extended from the N-shaped metal ohmic contact on both sides of the deep ridge structure to the substrate by the inclined mesa; and reducing and splitting.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Integrated device for seamed butt joint of AWG (arrayed waveguide grating) output waveguide and detector and preparation method

The invention provides an integrated device for seamed butt joint of an AWG (arrayed waveguide grating) output waveguide and a waveguide photodetector and a preparation method of the integrated device. The integrated device comprises a substrate, the AWG output waveguide and the waveguide photodetector, wherein the left area and the right area of the substrate are taken as an AWG area and a PD (photodetector) area respectively; the AWG output waveguide is located on the AWG area on the substrate, and an AWG lower coating layer and an AWG core layer extend to the PD area; the waveguide photodetector is formed above the AWG core layer in the PD area on the substrate, and a PD lower contact layer of the waveguide photodetector extends into an AWG upper coating layer of the AWG output waveguide and is located above the AWG core layer; a PD absorbing layer and a PD upper contact layer of the waveguide photodetector are spaced with the AWG upper coating layer of the AWG output waveguide by a narrow seam. According to the integrated device and the preparation method, excessive coupling loss generated during interconnection of discrete devices is avoided, and the energy efficiency of an optical link is improved through evanescent field coupling; meanwhile, by means of the seam between the AWG output waveguide and the waveguide photodetector, the capacitance of PD devices is reduced, and the device bandwidth is increased.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Method for manufacturing printed circuit board with conical optical waveguide

A method for manufacturing a printed circuit board with a conical optical waveguide includes the following steps that firstly, a substrate is manufactured, wherein the substrate is formed by a copper-clad plate, a medium layer is arranged in the middle of the copper-clad plate, and copper layers are arranged on the two sides of the copper-clad plate; secondly, an optical waveguide layer is manufactured, wherein an upper wrapper, a core layer and a lower wrapper are sequentially manufactured on the substrate, wherein the area of the cross section of the core layer of the optical waveguide gradually decreases in the optical signal propagation direction, the area of the cross section of the input end of the core layer of the optical waveguide is larger than the area of the cross section of the output end of the core layer, and then the conical optical waveguide is formed; thirdly, a matched printed circuit board is manufactured; fourthly, the printed circuit board and the substrate with the optical waveguide layer are laminated to form a mixed plate with the optical waveguide layer and the copper layers; fifthly, the mixed plate is subsequently machined through the drilling step, the electroplating step, the graph manufacturing step, the green oil coating step, the surface processing step, the cleaning step, the examining step, the cleaning step and the packaging step. According to the method, optical waveguide coupling loss of the circuit board can be effectively reduced, and the alignment tolerance of an optical fiber or the optical waveguide can be increased under the same coupling loss requirement.
Owner:SHANGHAI MEADVILLE SCI & TECH

Optically pumped vertical external-cavity surface-emitting laser device

The present invention relates to an optically pumped vertical external-cavity surface-emitting laser device comprising at least one VECSEL (200) and several pump laser diodes (300). The pump laser diodes (300) are arranged to optically pump the active region (108) of the VECSEL (200) by reflection of pump radiation (310) at a mirror element (400). The mirror element (400) is arranged on the optical axis (210) of the VECSEL (200) and is designed to concentrate the pump radiation (310) in the active region (108) and to form at the same time the external mirror of the VECSEL (200). The proposed device avoids time consuming adjustment of the pump lasers relative to the active region of the VECSEL and allows a very compact design of the laser device.
Owner:KONINKLIJKE PHILIPS NV

Double-cantilever inverted cone spot-size conversion structure for waveguide coupling

The invention discloses a double-cantilever inverted-cone spot-size conversion structure for waveguide coupling, and the structure consists of an input waveguide, a multimode waveguide interference region, two output waveguides, and parabolic inverted-cone structures at the rear ends of the output waveguides. The self-mapping effect is utilized to enable input light waves to generate a plurality of images on the cross section of the output waveguide, the light waves after beam splitting are spread in the output waveguide, and the cross section of the output waveguide passing through the parabola-shaped inverted cone structure is gradually reduced, so that the light waves of several output waveguides are diffused into the cladding so as to be conveniently coupled with a large-size waveguide. Compared with a traditional single inverted-cone-shaped coupler, the double-cantilever parabola-shaped inverted-cone-shaped structure is adopted, the alignment tolerance is improved, a small mode field of light transmitted by a small-size waveguide can be converted into a large mode field so that the light can be efficiently coupled into a large-size waveguide, meanwhile, a cladding layer where the parabola-shaped inverted-cone-shaped structure is located is suspended, substrate leakage is avoided, and the coupling efficiency is improved. And the loss during optical signal transmission is reduced.
Owner:BEIJING UNIV OF POSTS & TELECOMM

Photoluminescence LED display device and manufacturing method thereof

The invention provides a photoluminescence LED display device and a manufacturing method thereof. The display device comprises a light emitting diode array and a display panel which is arranged at oneside of the light emitting diode array, and the display panel comprises a light-transmitting base plate and a photoluminescence layer structure. The photoluminescence layer structure is supported bythe light-transmitting base plate, and the light-transmitting base comprises comprises a red light penetrating area, a green light penetrating area and a blue light penetrating area; the photoluminescence layer structure comprises a red photoluminescence layer and a green photoluminescence layer, wherein the red photoluminescence layer is arranged on the green photoluminescence layer. Therefore, by arranging the photoluminescence layers in a vertical stacked mode, precise pixel positioning of the photoluminescence layer structure can be avoided, so that the display device can be manufactured more easily; and meanwhile, the display device is also relatively excellent in light energy utilization rate and relatively large in display view angle.
Owner:MAVEN OPTRONICS CO LTD

Integrated device and preparation method for jointing of AWG output waveguide and detector with seam

The invention provides an integrated device for seamed butt joint of an AWG (arrayed waveguide grating) output waveguide and a waveguide photodetector and a preparation method of the integrated device. The integrated device comprises a substrate, the AWG output waveguide and the waveguide photodetector, wherein the left area and the right area of the substrate are taken as an AWG area and a PD (photodetector) area respectively; the AWG output waveguide is located on the AWG area on the substrate, and an AWG lower coating layer and an AWG core layer extend to the PD area; the waveguide photodetector is formed above the AWG core layer in the PD area on the substrate, and a PD lower contact layer of the waveguide photodetector extends into an AWG upper coating layer of the AWG output waveguide and is located above the AWG core layer; a PD absorbing layer and a PD upper contact layer of the waveguide photodetector are spaced with the AWG upper coating layer of the AWG output waveguide by a narrow seam. According to the integrated device and the preparation method, excessive coupling loss generated during interconnection of discrete devices is avoided, and the energy efficiency of an optical link is improved through evanescent field coupling; meanwhile, by means of the seam between the AWG output waveguide and the waveguide photodetector, the capacitance of PD devices is reduced, and the device bandwidth is increased.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Spot size converter and preparation method thereof

The invention discloses a spot size converter and a preparation method thereof. The spot size converter comprises a silicon substrate, a buried oxide layer, a first waveguide located on the buried oxide layer, at least two second waveguides parallel to the first waveguide, an upper cladding and at least two low-refractive-index waveguides, wherein the second waveguides are arranged on the two sides of the first waveguide; the width of the first waveguide is gradually reduced from the incident surface to the emergent surface; the upper cladding is located on the buried oxide layer, the first waveguide and the second waveguides; the at least two low-refractive-index waveguides are located in the upper cladding, are higher than the first waveguide and are parallel to the first waveguide; thelow-refractive-index waveguides are arranged on the two sides of the first waveguide; the width of the low-refractive-index waveguide is gradually increased from the light incident surface to the light emergent surface, and the refractive index of the low-refractive-index waveguide is lower than that of the first waveguide. According to the invention, the alignment tolerance is large, and the substrate absorption loss is small.
Owner:UNITED MICROELECTRONICS CENT CO LTD

Integrated device of awg output waveguide and waveguide detector and its preparation method

The invention provides an AWG output waveguide and waveguide detector integration device and a preparation method thereof. The integration device comprises a substrate, an AWG output waveguide and a waveguide detector, and is characterized in that the AWG output waveguide is strip-shaped and located in an AWG area on the substrate, the AWG output waveguide comprises an AWG lower covering layer, an AWG core layer and an AWG upper covering layer from the bottom up, and the AWG lower covering layer and the AWG core layer extend to a PD area; and the waveguide detector is formed above the AWG cover layer of the PD area on the substrate and is arranged opposite to the AWG output waveguide, and the waveguide detector comprises a PD lower contact layer, a PD absorbing layer and a PD upper contact layer from the bottom up. According to the invention, light transmitted in the AWG output waveguide is coupled to the PD absorbing layer of the waveguide detector layer by layer from the AWG core layer in a mode of evanescent field coupling from the bottom up, thereby avoiding excessive coupling loss in interconnection of discrete devices, and improving the energy efficiency in an optical link by using evanescent field coupling.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

A method of manufacturing a printed circuit board with a tapered optical waveguide

A method for manufacturing a printed circuit board with a conical optical waveguide includes the following steps that firstly, a substrate is manufactured, wherein the substrate is formed by a copper-clad plate, a medium layer is arranged in the middle of the copper-clad plate, and copper layers are arranged on the two sides of the copper-clad plate; secondly, an optical waveguide layer is manufactured, wherein an upper wrapper, a core layer and a lower wrapper are sequentially manufactured on the substrate, wherein the area of the cross section of the core layer of the optical waveguide gradually decreases in the optical signal propagation direction, the area of the cross section of the input end of the core layer of the optical waveguide is larger than the area of the cross section of the output end of the core layer, and then the conical optical waveguide is formed; thirdly, a matched printed circuit board is manufactured; fourthly, the printed circuit board and the substrate with the optical waveguide layer are laminated to form a mixed plate with the optical waveguide layer and the copper layers; fifthly, the mixed plate is subsequently machined through the drilling step, the electroplating step, the graph manufacturing step, the green oil coating step, the surface processing step, the cleaning step, the examining step, the cleaning step and the packaging step. According to the method, optical waveguide coupling loss of the circuit board can be effectively reduced, and the alignment tolerance of an optical fiber or the optical waveguide can be increased under the same coupling loss requirement.
Owner:SHANGHAI MEADVILLE SCI & TECH

Method of fabricating optoelectronic integrated circuit chip

Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.
Owner:ELECTRONICS & TELECOMM RES INST
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