A kind of uncooled infrared detector tower pier and its making method

Abstract

The invention relates to a tower-type pier of an uncooled infrared detector. The tower-type pier comprises an ASIC (Application Specific Integrated Circuit), wherein a polyimide sacrificial layer (3) and an electrode block (2) are arranged on the ASIC; an etch supporting hole (4-1) is formed in the polyimide sacrificial layer (3); a sputtering metal layer (4) is arranged on a wafer in which the etch supporting hole (4-1) is formed; a polyimide sacrificial layer (5) is arranged on the sacrificial layer (3), and an etch supporting hole (6-1) is formed in the polyimide sacrificial layer (5); a sputtering metal layer (6) is arranged on a wafer in which the etch supporting hole (6-1) is formed; a support layer (7) is arranged on the metal layer (6); a thermosensitive layer (8) is arranged on the support layer (7); a dielectric layer (9) is arranged on the thermosensitive layer (8); a through hole is formed in the metal layer (6) in the supporting hole; a contact hole (11) is formed in the dielectric layer (9); and electrode metal (12) is connected on the through hole (10) and the contact hole (11), and a passivation layer is deposited on the electrode metal (12) after the electrode metal (12) is connected on the through hole (10) and the contact hole (11).

Description

technical field [0001] The patent of the invention relates to the field of design and manufacture of MEMS devices, specifically a tower-type pier structure and manufacturing method of an uncooled infrared detector. Background technique [0002] Uncooled infrared detectors are widely used in military, automotive, security, biomedical, electric power, aviation, police, forest fire prevention and Internet of Things and other fields. In recent years, uncooled infrared detector technology has achieved important breakthroughs and achieved commercial mass production. It not only solves the working condition that the refrigerated infrared detector requires low temperature (-77K) cooling, but also realizes large-scale or ultra-large-scale integration with the readout circuit. This technology is suitable for mass production using large-scale integrated circuit manufacturing technology, which makes the cost of infrared detectors low, so that the application of infrared thermal imaging...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a brand-new tower-type bridge pier (Anchor) structure and manufacturing method: the bridge pier (Anchor) structure can solve the problem that the size of the bridge pier cannot be scaled down when the pixel of the uncooled infrared detector is scaled down. The problem of reducing the proportion; solve the problem of deviation of the through hole alignment at the pier and the failure of the pixel; solve the problem of poor contact resistance or increased failure caused by the corresponding reduction of the through hole when the size of the pixel is reduced; solve the problem of poor contact resistance or increased failure in the support hole It is necessary to do metal filling process to improve contact resistance; to solve the problem of etching thick sacrificial layer, poor shape and line width repeatability and poor uniformity of supporting holes at bridge piers, and difficult to control the shape; and this structure is due to the use of Ti or NiCr is used as the concave support structure of the structure, which acts as a natural termination layer when etching PostHole2 and through holes

Solve the problem that the pixel size is further reduced (such as 17 μm and below), if the pier cannot be scaled down, the pixel filling factor is low, resulting in poor device performance, and the problem of being unable to make large area arrays and high-performance devices; solve the problem of the original structure due to high steps and Support holes (depth > 2.0μm) lead to poor step coverage of sidewall electrode metal film, resulting in high contact resistance and high device noise

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