An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target.In order to achieve the foregoing object, the present invention provides a high-purity Ru alloy target, wherein the content of the platinum group elements excluding Ru is 15 to 200 and remnants are Ru and inevitable impurities. Also, provided is the manufacturing method of a high-purity Ru alloy target, wherein the content of platinum group elements excluding Ru is 15 to 200 wtppm and remnants are Ru and inevitable impurities, including the steps of mixing Ru powder having a purity level of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding the mixed powder to obtain a compact, performing electron beam melting to the compact to obtain an ingot, and performing forge processing to the ingot to obtain a target.