161results about How to "Ensure insulation" patented technology

There is provided an active matrix substrate which enables to shorten a fabrication process of a pixel electrode, improve exposure precision by self alignment, and prevent leakage failures between pixel electrodes. On top of the interlayer insulating film, there are formed pixel electrodes, which are connected to the TFTs through contact holes piercing through the interlayer insulating film. The pixel electrodes are formed by applying on the interlayer insulating film a photosensitive transparent resin such as negative acrylic polymerized resin containing ITO, ATO or ZnO as transparent conductive particles, performing exposure from the back side of the substrate, and conducting development.

A wiring board includes an insulating substrate and a wiring pattern. The wiring pattern includes a main body and an upper end portion and is embedded in the insulating substrate while exposing at least the upper end portion on a surface of the insulating substrate. The upper end portion has a cross-sectional width smaller than that of a lower end portion of the wiring pattern embedded in the insulating substrate. The upper end portion is formed of a metal that is more noble than a metal of the main body of the wiring pattern.The wiring board having this structure achieves very high adhesion of the wiring pattern to the insulating layer.

A transformer comprises E-type core parts, a cylindrical core part, a second substrate, first substrates, and an insulating sheet. Each of the second substrate and the fist substrates includes a penetration hole. A coil is wired around the penetration hole. The second substrate is wrapped with an insulating sheet, together with the cylindrical core part. The second substrate and the cylindrical core part are sandwiched between cylindrical core legs of the core parts, through the insulating sheet.

A circuit substrate comprises a glass substrate 16, through-holes 18 formed through the glass substrate 16 and via electrodes 20 buried in the through-holes 18. An opening width of the through-holes 18 is minimum inside the glass substrate and is increased toward both surfaces of the glass substrate 16. Accordingly, the detachment of the via electrodes 20 can be prevented without increasing the surface roughness of the inside walls of the through holes, and stresses generated in the core substrate can be mitigated.

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a casing, a board and a semiconductor chip. The chip includes: an element part; a heat sink bonded to the element part; an insulting layer located on the heat sink so that the heat sink is located between the element part and the insulating layer; and a side wall insulating layer covering all of end faces of the heat sink. The semiconductor chip is located between the casing and the board, so that the insulating layer is directed to the casing to enable heat radiation from the heat sink toward the casing via the insulating layer.

The invention relates to a majority current assisted detector device, comprising a semiconductor layer of a first conductivity type epitaxially grown on a semiconductor substrate, at least two control regions of the first conductivity type, at least two detection regions of a second conductivity type opposite to the first conductivity type, and a source for generating a majority carrier current in the semiconductor layer between the two control regions, the majority current being associated with an electrical field. The detection regions surround the control regions, thereby forming at least two taps. The device is configured for backside illumination and further comprises a well of the first conductivity type between the two detection regions for insulating the detection regions. The well comprises pixel circuitry elements.

An insulating motor housing includes first to fourth power supply elements stacked in their thickness direction to be spaced and insulated from each other and integrated with a housing body by insert molding. A power source connector using power source terminals of the second to fourth power supply elements as connector terminals is also integrated with the housing body.

The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Provided is an electroacoustic converter film including thin film electrodes provided on both surfaces of a polymeric composite piezoelectric body in which piezoelectric body particles are dispersed in a viscoelastic matrix formed of a polymer material that exhibits viscoelasticity at normal temperature, and protective layers formed on the thin film electrodes. The electroacoustic converter film further includes electrode lead-out metal foils laminated on the thin film electrodes, and the electrode lead-out metal foils allows connection to wiring through soldering when electrodes are led out from the thin film electrodes.

For safety reasons the potential of an electrical supply line of a radar sensor may be separated from the potential of the fill level container. A fill level radar with potential separation includes a separation element for insulating the aerial from a feed device. The separation element is arranged directly at the aerial, or forms part of the aerial. In this way insulation of the aerial from the exterior of the container is provided.

A transformer comprises E-type core parts, a cylindrical core part, a second substrate, first substrates, and an insulating sheet. Each of the second substrate and the fist substrates includes a penetration hole. A coil is wired around the penetration hole. The second substrate is wrapped with an insulating sheet, together with the cylindrical core part. The second substrate and the cylindrical core part are sandwiched between cylindrical core legs of the core parts, through the insulating sheet.

An insulating motor housing includes first to fourth power supply elements stacked in their thickness direction to be spaced and insulated from each other and integrated with a housing body by insert molding. A power source connector using power source terminals of the second to fourth power supply elements as connector terminals is also integrated with the housing body.

An electromagnetic relay includes a box-shaped insulating housing in which a closed space is formed, a pair of fixed terminals fixed to the housing electrically independently of each other and each having a fixed contact placement surface in the closed space, a plate-shaped conductive movable contactor that is provided in the closed space, has a first surface facing the fixed contact placement surfaces of the pair of fixed terminals, and is movably disposed such that the first surface approaches and separates from the fixed contact placement surfaces of the pair of fixed terminals, a pair of fixed contacts respectively provided on the fixed contact placement surfaces of the pair of fixed terminals, and a pair of movable contacts that is respectively provided on the first surface of the movable contactor and respectively face the pair of fixed contacts.

Embodiments of the present invention disclose a thin film transistor, a method of manufacturing a thin film transistor, an array substrate and a display device, which may ensure electrical connection between source and drain electrodes and an active layer without configuring any through hole due to providing an etch stop layer between the active layer and the source and drain electrodes, a portion of the etch stop layer being in contact with the source and drain electrode is made of metal or metal alloy; and may ensure insulation between the source and the drain electrodes when the thin film transistor is turned-off, ensuring normal operation of the thin film transistor, by oxidating the portion of the etch stop layer at the position between the source and the drain electrodes as an insulating material. The etch stop layer may not only prevent the active layer from being damaged when etching the source and drain electrodes, but also prevent the active layer from other adverse effects from subsequent processes, such as adverse effects from water, hydrogen and oxygen, etc., thereby enhancing performance of the thin film transistor, just because of providing the etch stop layer between the active layer and the source and drain electrodes in the thin film transistor.

A semiconductor device includes a first fin-shaped semiconductor layer on a semiconductor substrate, a first insulating film around the first fin-shaped semiconductor layer, a first pillar-shaped semiconductor layer on the first fin-shaped semiconductor layer, a first gate insulating film around the first pillar-shaped semiconductor layer, a first gate line formed around the first gate insulating film and extending in a direction perpendicular to the first fin-shaped semiconductor layer, a second diffusion layer disposed in a lower portion of the first pillar-shaped semiconductor layer, a third gate insulating film surrounding an upper portion of the first pillar-shaped semiconductor layer, a first contact electrode surrounding the third gate insulating film, a second contact electrode that connects an upper portion of the first contact electrode to an upper portion of the first pillar-shaped semiconductor layer, and a first magnetic tunnel junction memory element on the second contact electrode.