182results about How to "Improve Exposure Accuracy" patented technology

Pattern transfer can be performed with improved exposure accuracy, by reducing the contamination caused by the attachment of a photosensitive agent or the like on an optical member of a projection optical member or the like. The pattern transfer onto a substrate W is performed after cleaning the objective member OB disposed at a given position by a cleaning device 8 at the time when pattern transfer is not performed, or while making flow a gas in a space between the substrate W and the optical member OB by a contamination protection device 98. Alternatively, the optical member OB disposed at a given position is inspected for contamination by a contamination inspection device 84 at the time when pattern transfer is not performed, and the pattern transfer or the cleaning or replacement of the optical member is performed based on the result.

There is provided an active matrix substrate which enables to shorten a fabrication process of a pixel electrode, improve exposure precision by self alignment, and prevent leakage failures between pixel electrodes. On top of the interlayer insulating film, there are formed pixel electrodes, which are connected to the TFTs through contact holes piercing through the interlayer insulating film. The pixel electrodes are formed by applying on the interlayer insulating film a photosensitive transparent resin such as negative acrylic polymerized resin containing ITO, ATO or ZnO as transparent conductive particles, performing exposure from the back side of the substrate, and conducting development.

Before measuring a wavefront aberration of a projection optical system, an image formation position of an image of a pattern of a test reticle which is formed on a predetermined surface is detected by an AF sensor. Based on a result of this detection, the position of an incident surface of a wavefront aberration measurement unit is adjusted, and a position of an image of the pattern with respect to the incident surface is adjusted. After this adjustment, the image of the pattern formed through the projection optical system is detected by the wavefront aberration measurement unit, and a wavefront aberration detection section is used to obtain wavefront aberration information of the projection optical system based on a result of this detection.

An exposure apparatus includes a first structure which supports a projection unit which projects an exposure beam onto a substrate, a first anti-vibration supporting leg which includes a first actuator and supports the first structure, a second structure which supports a substrate stage which aligns the substrate, a second anti-vibration supporting leg which includes a second actuator and supports the second structure, and a control unit which controls at least one of the first actuator and the second actuator to reduce the relative displacement between the first structure and the second structure.

When a stage on which a wafer is mounted is driven in an X-axis direction by a liner motor, a reaction force of the drive force is generated at a stator and acts on a counterweight via the stator, and thereby the counterweight moves in a direction opposite to the stage in accordance with movement of the stage in the X-axis direction. Accordingly, the reaction force generated by the drive of the stage can substantially be canceled by the movement of the counterweight. Further, since the counterweight has a first section that is connected to the stator, and a second section that is separated from the first section in the X-axis direction and connected to the first section via a connection section, a partition wall of a chamber can be placed using the connected portion as a boundary, and the second section of the counterweight can be located outside the partition wall. Thus, a stage housing space can be set to smaller.

A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

The invention discloses an automatic exposure machine mechanism, which comprises a frame, a lower frame lifting mechanism, a frame change mechanism and a lifting alignment device, wherein the frame is used for clamping a negative film and a substrate in the up-down direction; the frame is divided into a lower frame and an upper frame, which are arranged at the left side and the right side; the lower frame lifting mechanism is arranged at the bottom end of the lower frame and is used for controlling lifting of the lower frame to the same height as the upper frame; the frame change mechanism is used for exchanging the positions of the upper frame and the lower frame in the left-right direction; and the lifting alignment device is arranged below the lower frame and is used for adjusting the position, relative to the upper negative film, of the lower substrate. The automatic exposure machine mechanism is simple in structure, good in stability and high in exposure accuracy. The lower frame is provided with the lower frame lifting mechanism, so that the condition that an industrial camera does not generate an error due to a focusing problem of the lower stage frame when collecting an image is ensured; the lifting alignment device can adjust the position, relative to the negative film, of the lower substrate, so that accurate alignment is achieved; the upper frame and the lower frame are subjected to left and right position exchange through the frame change mechanism; the automatic exposure machine mechanism is simple to run and convenient to operate; an exposure machine can stably run; and the work efficiency is also improved.

An exposure apparatus (EX) exposes a substrate (P) by irradiating exposure light (EL) on the substrate (P) via a projection optical system (PL) and a liquid (LQ) supplied from a liquid supply mechanism (10). The exposure apparatus (EX) has a pressure adjustment mechanism (90) for adjusting pressure of the liquid (LQ) supplied from the liquid supply mechanism (10). A liquid immersion area is satisfactorily formed to obtain high exposure accuracy and measurement accuracy.

With this position measurement method, a mark which has been formed upon an object is illuminated with an illumination beam, a beam which is generated from this mark is picked up via an observation system, and the resultant image signal is signal processed so as to measure positional information which is related to the mark. This signal processing is performed based upon information related to the noise which is included in the component dependent upon the amount of light which is included in the image signal, and upon said image signal. As a result, it is possible to measure the positional information for the mark with good accuracy, even if noise is included in the image signal.A position measurement method includes a step of illuminating a mark formed on an object by an illumination beam, a step of imaging a beam generated from the mark via an observation system, and a step of processing the imaging signal so as to measure the position information associated with the mark position. The signal processing is performed according to information on a noise containing a light-quantity-dependent component contained in the imaging signal and the imaging signal. As a result, it is possible to accurately measure the mark position information even when the imaging signal contains a noise.

The invention discloses an exposure method and an exposure machine, belonging to the technical field of display and capable of achieving a higher exposure precision. The exposure method comprises the following steps: placing a mask plate on a first position above a substrate to be exposed; exposing a first region of photoresist on the substrate; moving the mask plate to a second position above the substrate; exposing a second region of the photoresist on the substrate, so that the overlapping part of the first region and the second region of the photoresist are exposed twice. The exposure method and the exposure machine disclosed by the invention are applicable to a manufacturing process of a liquid crystal display.

The invention discloses a liquid crystal display which comprises a plurality of square pixel structures. Each square pixel structure comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel and is divided into four square sub-regions with the equal sizes, and the area of each blue sub-pixel is two times the area of each red sub-pixel or each green sub-pixel. The liquid crystal display has the advantages that the areas of blue pixels can be enlarged by the square pixel structures, and accordingly the blue light efficiency can be improved; the square pixel structures and blue light excitation quantum dots are combined with one another, and accordingly the liquid crystal display is high in exposure accuracy, color saturation, contrast, response speed and resolution, wide in visual angle and free of color cast without increase of extra cost.

The invention discloses a method for forming a semiconductor device layer by exposure, which is characterized by comprising that: A, when a lighthouse is aligned with a front layer, the lighthouse measures an alignment mark of the front layer to acquire characteristic information of a front layer wafer, and the lighthouse measures an overlapped precision measuring identifier of the front layer to acquire characteristic information of an exposure unit in the front layer; B, the characteristic information of the front layer wafer and the characteristic information of the exposure unit in the front layer are fed back to the lighthouse; and C, the lighthouse performs exposure to form the layer according to the fed back characteristic information of the wafer and characteristic information of the exposure unit. Due to the adoption of the method, the production efficiency of the wafer can be greatly improved.