75results about How to "Ensure adequate isolation" patented technology

A one-transistor, floating-body (1T/FB) dynamic random access memory (DRAM) cell is provided that includes a field-effect transistor fabricated using a process compatible with a standard CMOS process. The field-effect transistor includes a source region and a drain region of a first conductivity type and a floating body region of a second conductivity type, opposite the first conductivity type, located between the source region and the drain region. A buried region of the first conductivity type is located under the source region, drain region and floating body region. The buried region helps to form a depletion region, which is located between the buried region and the source region, the drain region and the floating body region. The floating body region is thereby isolated by the depletion region. A bias voltage can be applied to the buried region, thereby controlling leakage currents in the 1T/FB DRAM cell.

A series-parallel battery system with a buffer resistor coupled to each junction of batteries or battery cells. Buffer resistors on the same row are coupled to a measurement node. Terminals of the battery system and the measurement nodes are treated as measurement points that are coupled to a conventional battery management unit. The buffer resistors provide a means for limiting in-rush current and a means for maintaining voltage balance across the row of batteries in the parallel columns of batteries. A control unit in series with each series of batteries monitors current in the series and comprises a switch to deactivate the column when the current exceeds a set of predetermined current levels.

The present invention relates to antenna architectures and methods on re-configurable multi-element antennas via feed re-positioning for various optimized radiation contours, including beam forming (or shaping) and/or null steering on contoured beams, spot beams, and orthogonal beams. The feed re-positioning techniques can also be used in radiation pattern optimization processing during antennas designing phases for fixed beams. The techniques are applicable for satellite communications. For satellite antennas, the beam shaping capability via element repositioning can be utilized for (1) optimized geometries on satellite antennas for given desired coverage areas, (2) re-optimizing radiation contours for reconfigurable antenna on board satellites in operation, (3) additional flexibility for satellite antennas using ground based beam forming (GBBF). As to satellite ground terminals, the same techniques are applicable for both fixed and mobile satellite terminals featuring either single beam or multiple beams. For fixed terminals, are applicable for terrestrial based communications; such as retrofitting existing antennas eliminating interference radiations coming from fixed or slow varying directions.

An electric flight control surface actuation system is implemented using a low level control section and a high power section. The low level control section is disposed within an electronics bay within the aircraft, and is in operable communication with one or more flight computers via a communication bus. The flight computers supply flight control surface position commands to the low level control section, which in turn transmits actuator commands to the high power section via a plurality of redundant communication links. The high power section is disposed remotely from the low level control section and, in addition to being in operable communication with the low level control section, is coupled to an aircraft power bus and to each of the actuators. The high power section receives the actuator position commands transmitted from the low level control section and, in response, selectively energizes the actuators from the aircraft power bus.

A pad electrode of a high electron mobility transistor is formed solely of a pad metal layer without providing a gate metal layer. A high concentration impurity region is provided below the pad electrode, and the pad electrode is directly contacted to a substrate. Predetermined isolation is ensured by the high concentration impurity region. Accordingly, in a structure not requiring a nitride film as similar to the conventional art, it is possible to avoid defects upon wire boding attributing to hardening of the gate metal layer. Therefore, even in the case of a buried gate electrode structure for enhancing characteristics of the high electron mobility transistor, it is possible to enhance reliability and yields.

A catheter system can include an electrical adapter and a catheter. The electrical adapter includes a hollow adapter body having a longitudinally extending channel and an electrical terminal positioned within the channel. The electrical adapter can be configured to connect to an energy source. The catheter can include an elongated body having a proximal end portion and a distal end portion, and an electrical connector coupled to the proximal end portion. The electrical connector forms the outer periphery of the catheter along a portion of the longitudinal length of the catheter. The electrical terminal and the electrical connector contact each other when the electrical connector is advanced through the channel to an electrical contact position in the channel, and are isolated from each other when the electrical connector is proximal of the electrical contact position.

A first housing includes a first conductor plate, and a second housing includes a second conductor plate. A rotation mechanism openably and closably attaches the second housing to the first housing. A first driven element and a second driven element are arranged along a rotation axis of the rotation mechanism. Between the first driven element and the second driven element, a continuity structure intersects the rotation axis to establish direct-current or high-frequency continuity between the first conductor plate and the second conductor plate. An antenna device can be provided which can ensure sufficient isolation between a plurality of driven elements.

The present invention relates to a frequency-adjustable radio frequency (RF) isolator that may operate as a bandpass filter when processing RF signals in a forward direction and may operate as a notch filter when processing RF signals in a reverse direction. The notch filter has a notch frequency, which is adjustable to provide adequate isolation from reflected signals at a specific operating frequency. The frequency-adjustable RF isolator may include an electro-magnetic gyrator coupled to a variable impedance circuit, which may present a variable impedance to the electro-magnetic gyrator. The notch frequency may be dependent on the variable impedance. The notch filter may be a single-notch filter or may be a multiple-notch filter.

A level gauge for detecting process variables related to a distance to a surface of a content in a tank, comprising a first and second functionally independent circuitry arrangements comprising transceiver circuitry and processing circuitry. The gauge further comprises a power divider providing isolation between signals having the same propagation mode, a single wire transmission line probe, and a matching arrangement providing an electrically matched connection between the electrical connection of a process seal and the single wire transmission line probe.

A combination of a power divider with a matching arrangement allows multiple channels on one single wire transmission line probe.

A semiconductor device includes a substrate having an active region defined by a device isolation layer and at least a gate trench linearly extending in a first direction to cross the active region, the active region having a gate area at a bottom of the gate trench and a junction area at a surface of the substrate. The device further may include a first conductive line filling the gate trench and extending in the first direction, the first conductive line having a buried gate structure on the gate area of the active region. The device also may include a junction including implanted dopants at the junction area of the active region, and a junction separator on the device isolation layer and defining the junction. The junction separator may be formed of an insulative material and have an etch resistance greater than that of the device isolation layer.

An electrical ribbon cable (110) includes an insulated conductor (114) extending along a longitudinal axis of the cable. The cable also includes a shielding film (116) that carries the insulated conductor (114). The shielding film (116) has a variable thickness defining a thickened rib portion (117) and a thinned connecting portion (118), these portions being electrically conductive and extending along the longitudinal axis. The insulated conductor (114) is disposed proximate the rib portion (117). The insulated conductor (114) may be one of multiple insulated conductors that are organized into multiple conductor sets (112) including at least a first and second conductor set, each conductor set (112) including one or more of the insulated conductors (114), and the rib portion (117) may be disposed between the first and second conductor sets.

A pad electrode of a field effect transistor is formed solely of a pad metal layer without providing a gate metal layer. A high concentration impurity region is provided below the pad electrode, and the pad electrode is directly contacted to a substrate. Predetermined isolation is ensured by the high concentration impurity region. Accordingly, in a structure not requiring a nitride film as similar to the related art, it is possible to avoid defects upon wire boding attributing to hardening of the gate metal layer. Therefore, in the case of a buried gate electrode structure for enhancing characteristics of the field effect transistor, it is possible to enhance reliability and yields.

Embodiments of the present invention are directed to methods, apparatuses, and systems for implementing a point-to-point radio architecture in which the isolation needed between the transmitter and receiver may be achieved through the use of separate antennas. One embodiment is directed at a radio head comprising a transmitter configured to operate at a first frequency, a receiver configured to operate at a second frequency, and a processor coupled to both the transmitter and the receiver. The transmitter is further coupled to a first antenna interface coupled to a first antenna configured to transmit signals at the first frequency. The receiver is further coupled to a second antenna interface coupled to a second antenna configured to receive signals at the second frequency.

A battery assembly includes a thermal shield. The thermal shield protects battery cells in the battery assembly from hot gases vented by a neighboring cell experiencing thermal runaway. The thermal shield acts as a one-way valve, allowing the cell experiencing thermal runaway to properly vent away hot gases, but still protecting the rest of the cells in the battery pack from the hot gases.