42results about How to "Improved avalanche capability" patented technology

A trench MOSFET with on-resistance reduction comprises a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate, wherein the said MOSFET further comprises a plurality of source-body contact trenches opened relative to a top surface into said source and body regions and each of the source-body contact trenches is filled with a contact metal plug as a source-body contact; a insulation layer covered over the top of the trenched gate, the body region and the source region; a front metal layer formed on a top surface of the MOSFET; wherein a low-resistivity phosphorus substrate and retrograded P-body formed by medium or high energy Ion Implantation to reduce Rds contribution from substrate and drift region.

A trench MOSFET structure having improved avalanche capability is disclosed, wherein the source region is formed by performing source Ion Implantation through contact open region of a thick contact interlayer, and further diffused to optimize a trade-off between Rds and the avalanche capability. Thus, only three masks are needed in fabrication process, which are trench mask, contact mask and metal mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Gaussian-distribution from trenched source-body contact to channel region.

A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source-body contact trench opened with sidewalls substantially extend vertically relative to a top surface into the source and body regions and filled with contact metal plug. A body-resistance reduction region doped with body-doped is formed to surround the source-body contact trench to reduce a body-region resistance between the source-body contact metal and the trenched gate to improve an avalanche capability.

A trench MOSFET structure having improved avalanche capability is disclosed, wherein the source region is formed by performing source Ion Implantation through contact open region of a contact interlayer, and further diffused to optimize a trade-off between Rds and the avalanche capability. Thus, only three masks are needed in fabrication process, which are trench mask, contact mask and metal mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Guassian-distribution from trenched source-body contact to channel region.

A trench MOSFET with embedded schottky rectifier having at least one anti-punch through implant region using reduced masks process is disclosed for avalanche capability enhancement and cost reduction. The source regions have a higher doping concentration and a greater junction depth along sidewalls of the trenched source-body contacts than along adjacent channel regions near the gate trenches.

A structure of power semiconductor device having dummy cells around edge of active area is disclosed. The UIS test result of said improved structure shows that failed site after UIS test randomly located in active area which means avalanche capability of the semiconductor power device is enhanced by implementation of the dummy cells.

A trench MOSFET with shielded electrode and improved avalanche enhancement region is disclosed. The inventive structure can achieve a better avalanche capability by applying an improved avalanche enhancement region having a same doping concentration as the epitaxial layer where said trench MOSFET is formed without increasing Rds.

The invention relates to a super junction semiconductor device manufacturing method capable of improving the avalanche capacity. On-resistance is increased correspondingly due to transverse diffusion caused by the traditional high dosage concentration of a column P, and puncture voltage is reduced due to electric charge unbalance of the column P and a column N. According to the method, the epitaxy technology is utilized to form an N-type epitaxy layer; a P-type and N-type epitaxy layer is formed by injecting boron ions; the injection amount of the boron ions increases gradually, and the boron ions are pushed under the high temperature to form a P-type and N-type alternant epitaxy layer; a Pbody area is formed by injecting the boron ions; a polycrystalline silicon gate electrode is formed by etching polycrystalline silicon through the dry method; an N+ source area is formed by injecting arsenic ions; a layer of aluminum is deposited on the upper surface of a whole device, a source metal electrode is formed by etching the aluminum, and a drain electrode is formed on the back face through metallization. According to the super junction semiconductor device obtained through the method, the avalanche capacity of the super junction semiconductor device is improved, and at the same time, on-resistance is reduced.

A trenched semiconductor power device is disclosed comprising a plurality of trenched gates, each including a pair of split gate electrodes and a shielded gate electrode forming an oxide charge balance region between adjacent trenched gates, and junction charge balance region below trench bottom. The trenched semiconductor power device further comprises a super junction structure including a plurality of alternating P and N regions disposed above a substrate forming a junction charge balance region below the oxide charge balance region for breakdown voltage enhancement and on-resistance reductions.

A trench MOSFET comprising a plurality of trenched gates surrounded by source regions encompassed in body regions in active area. A plurality of trenched source-body contact structure penetrating through the source regions and extending into the body regions, are filled with tungsten plugs padded with a Ti layer, a first and a second TiN layer, wherein the second TiN layer is deposited after Ti silicide formation to avoid W spiking occurrence.

The invention provides a silicon carbide MOSFET device with an avalanche charge transition buffer layer and a manufacturing method of the silicon carbide MOSFET device, and the method comprises the steps: injecting aluminum ions into an N-epitaxial layer, forming a P-type avalanche charge transition buffer layer and a P-type base region at the same time, and adjusting the injection depth through the thickness of a SiO2 mask; injecting aluminum ions to form a P + ohmic contact region; performing nitrogen ion implantation to form an N + source region and activating annealing; performing thermal growth and nitriding annealing on the gate oxide layer; depositing and etching polycrystalline silicon; introducing a plurality of electric field peak values below the P-type base region through the P-type avalanche charge transition buffer layer, after avalanche occurs on the device, and discharging avalanche charges from the P-type avalanche charge transition buffer layer and the corner of the P-type base region, so the generated current is in discrete distribution, the increase of local temperature is greatly alleviated, the avalanche capability of the device is improved, and the avalanche reliability of the silicon carbide MOSFET device in the blocking state is successfully enhanced.

A semiconductor device includes: a semiconductor base 10 in which a first trench 101 is formed in a mesh-like shape in a plan view and a second trench 102 is formed in a mesh opening surrounded by the first trench 101; a first semiconductor element 1 which is formed in the semiconductor base 10 and includes a first gate electrode 81 provided within the first trench 101; and a second semiconductor element 2 which is formed in the semiconductor base 10 and includes a second gate electrode 82 provided within the second trench 102 surrounded by the first gate electrode 81.

The invention provides a combined type ion lens ion wind generation device. The combined type ion lens ion wind generation device comprises an emitting electrode, wherein the emitting electrode comprises a plurality of electrode plates made of a conducting material; plate surfaces of the plurality of electrode plates are located in the front-back vertical direction; a row of discharging needles are uniformly arrayed on a backward side face of each electrode plate along the vertical direction; each discharging needle backward stretches out along the horizontal direction; a front lens plate is arranged behind the emitting electrode; a plate surface of the front lens plate is located in the left-back vertical direction; a plurality of grades of circular front lens through holes are uniformly arrayed on the a plate surface of the front lens plate along the vertical direction; the backward side face of each electrode plate faces one row of the front lens through holes; and a needle point of each discharging needle points to the middle part of one front lens through hole. The invention aims at providing the combined type ion lens ion wind generation device, which can be applied to an outdoor open space system, can be used for reducing the concentration of particulate matters at the periphery of a region of the device can be reduced within relatively short time, does not need to be driven by utilizing a draught fan in a purification process and has extremely low power consumption.