High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high
band gap and high
dielectric constant (K) materials. The sputtered or ink jet printed mixed
dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with
low leakage currents, while preserving a high
dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn
oxide as channel
layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V−1 s−1, close to 0 V turn-on
voltage, on / off ratio higher than 106 and
subthreshold slope below 0.24 V dec−1.