The invention discloses a
microvia-superfilling
copper plating technology. The
microvia-superfilling
copper plating technology comprises the following steps of a, carrying out activation treatment on a
blind hole plate to be plated in a dilute sulphuric acid solution for 1-10min, carrying out
water washing and
drying, vertically fixing the
blind hole plate to be plated to the middle of a
Hull cell having the volume of 1500mL, and putting
phosphor-containing
copper plates as anodes having
phosphor content of 0.04-0.065% at two ends of the
cell, b, preparing a plating solution, c, switching on a power supply, carrying out
electroplating at
current density of 0.5-2ASD for 5-30min, increasing
current density to 0.5-4ASD, carrying out
electroplating for 10-20min, wherein the whole
electroplating process is finished in a static state, then switching off the power supply, taking out the
blind hole plate as a
cathode, flushing the blind hole plate by
distilled water, and blow-
drying the blind hole plate by
cold air to obtain a sample. Under the condition of absolutely no
forced convection of the plating solution, the
microvia-superfilling
copper plating technology does not increase surface copper thickness and guarantees a high microvia-
filling rate of the blind hole device.