43 results about "Magnetic annealing" patented technology

There is provided a brazing method which makes it possible to rationally perform not only the brazing between a metal member such as a stator made of a magnetic material and a metal member such as a guide pipe made of a non-magnetic material but also the magnetic annealing of these metal members. By making use of a brazing material (90) which can be fused at a lower temperature than a magnetic annealing temperature of metal member (33), the metal member such as a stator made of a magnetic material and the metal member (35) such as a guide pipe made of a non-magnetic material are heated to a predetermined temperature in a furnace to perform the magnetic annealing of the metal member (33) concurrent with the brazing of these metal members.

A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.

A method of performing magnetic annealing of a ferromagnetic thin film applied to a substrate includes applying an oscillating magnetic field to the ferromagnetic thin film to induce a current therein and heat the ferromagnetic thin film. A directional magnetic field is applied to the ferromagnetic thin film at the same time as the ferromagnetic thin film is heated, and the ferromagnetic thin film is allowed to acquire a desired magnetic characteristic, and then the oscillating magnetic field is removed and the ferromagnetic thin film is allowed to cool.

A single-chip two-axis magnetoresistive angle sensor comprises a substrate located in an X-Y plane, a push-pull X-axis magnetoresistive angle sensor and a push-pull Y-axis magnetoresistive angle sensor located on the substrate. The push-pull X-axis magnetoresistive angle sensor comprises an X push arm and an X pull arm. The push-pull Y-axis magnetoresistive angle sensor comprises a Y push arm and a Y pull arm. Each of the X push, X pull, Y push arm, and Y pull arms comprises at least one magnetoresistive angle sensing array unit. The magnetic field sensing directions of the magnetoresistive angle sensing array units of the X push, X pull, Y push, and Y pull arms are along +X, −X, +Y and −Y directions respectively. Each magnetoresistive sensing unit comprises a TMR or GMR spin-valve having the same magnetic multi-layer film structure. A magnetization direction of an anti-ferromagnetic layer is set into a desired orientation through the use of a laser controlled magnetic annealing, and a magnetic field attenuation layer can be deposited in the surface of the magnetoresistance angle sensing unit.

The invention discloses a single-chip double-axis magneto-resistance angle sensor. The sensor comprises a substrate in an X-Y plane and magneto-resistance angle sensors in the push-pull X and Y axes on the substrate, the magneto-resistance angle sensor in the push-pull X axis comprises an X push arm and an X pull arm, the magneto-resistance angle sensor in the push-pull Y axis comprises a Y push arm and a Y pull arm, each of the push arms comprises at least one magneto-resistance angle sensing unit array, magnetic field sensing directions of the magneto-resistance angle sensing unit arrays of the X push arm, the X pull arm, the Y push arm and the Y pull arm are along +X, -X, +Y and -Y directions respectively, each magneto-resistance angle sensing unit includes a TMR / GMR spin valve of the same magnetic multi-layer film structure, a magnetization direction of an anti-ferromagnetic layer is obtained by laser program-control heating magnetic annealing, and a magnetic field attenuation layer can be deposited in the surface of the magneto-resistance angle sensing unit to broaden the working magnetic-field range. The single-chip double-axis magneto-resistance angle sensor has the advantages of compact structure, high precision, small size and capable of realizing the wide working magnetic-field range.

A heat exchange system and processes for a magnetic annealing tool is provided. The system includes a process chamber housing workpieces to be processed; an element chamber partly surrounding the periphery of the process chamber, at least one means for drawing a vacuum in fluid communication with the process chamber and separately with the element chamber in order to apply a vacuum to either or both of the process and element chamber so as to promote radiation heating of the workpieces; at least one supply of fluid in communication with the process chamber and separately with the element chamber to supply a cooling gas so as to promote conductive cooling of the workpieces; a cooling chamber disposed to surround the element chamber; and means for generating a magnetic field disposed on the outer periphery of the cooling chamber.

An annealing system and method of operating is described. The annealing system includes a furnace having a vacuum chamber wall that defines a processing space into which a plurality of workpieces may be translated and subjected to thermal and magnetic processing, wherein the furnace further includes a heating element assembly having at least one heating element located radially inward from the vacuum chamber wall and immersed within an outer region of the processing space, and wherein the heating element is composed of a non-metallic, anti-magnetic material. The annealing system further includes a magnet system arranged outside the vacuum chamber wall of the furnace, and configured to generate a magnetic field within the processing space.

A monolithic three-axis linear magnetic sensor and manufacturing method wherein the sensor comprises an X-axis sensor, a Y-axis sensor and a Z-axis sensor. The X-axis sensor comprises a referenced bridge and at least two X ferromagnetic flux guides. The Y-axis sensor comprises a push-pull bridge and at least two Y ferromagnetic flux guides. The Z-axis sensor comprises a push-pull bridge and at least one Z ferromagnetic flux guide. The bridge arms of the referenced bridge and push-pull bridge are each formed by one or more magnetoresistive elements that are electrically interconnected. The directions of the sensing axes and the directions of magnetization of the pinned layers of the magnetoresistive elements are all oriented along the X-axis. This manufacturing method comprises first depositing a magnetoresistive thin film on a wafer, and then performing several processes such as magnetic annealing, photolithography, etching, coating, and the like in order to realize a sensor. This monolithic three-axis linear magnetic sensor has the advantages of low cost, easy manufacturability, good linearity, and high sensitivity.

The invention discloses a preparation method of a GMR magnetic field sensor. The preparation method comprises the steps of providing a substrate; depositing a GMR multilayer film structure on the substrate, wherein the GMR magnetoresistance unit at least comprises a pinning layer, a non-magnetic metal layer and a free layer; applying an external magnetic field to magnetize the pinning layer whiledepositing the GMR multilayer film structure; carrying out low-temperature magnetic annealing, wherein the annealing direction is perpendicular to the magnetization direction of the pinning layer, andthe annealing temperature is lower than the blocking temperature of an antiferromagnetic material in the pinning layer; forming mutually independent GMR magnetoresistance chips on the GMR multilayerfilm structure; and connecting the GMR magnetoresistance chips according to a full-bridge structure, and connecting the GMR magnetoresistance chips with the input electrode and the output electrode toobtain the GMR magnetic sensor with the full-bridge structure. By adopting a low-temperature low-field annealing mode, the difficulty of temperature control is reduced, interlayer diffusion is inhibited, and the sensor can have higher magnetoresistance value and sensitivity.

There is provided a brazing method which makes it possible to rationally perform not only the brazing between a metal member such as a stator made of a magnetic material and a metal member such as a guide pipe made of a non-magnetic material but also the magnetic annealing of these metal members. By making use of a brazing material (90) which can be fused at a lower temperature than a magnetic annealing temperature of metal member (33), the metal member such as a stator made of a magnetic material and the metal member (35) such as a guide pipe made of a non-magnetic material are heated to a predetermined temperature in a furnace to perform the magnetic annealing of the metal member (33) concurrent with the brazing of these metal members.

A synthesis process is disclosed for fabrication of mass quantities of high-purity α-MnBi magnetic powder and subsequent bulk permanent magnet. An illustrative process includes certain steps that include: multiple annealing, multiple comminuting such as multiple ball milling, forming a non-magnetic phase on and / or in the powder particles at particle grain boundaries before particle consolidation such as pressing, and magnetic annealing of a pressed compact. A reproducible and high productive synthesis process is created by combining these steps with other steps, which makes possible production of mass quantities of MnBi powder and bulk magnets with high performance.

Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1 / AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.

The invention relates to a strong magnetic annealing process for an ultracrystalline iron core. The process comprises the following steps of: (1) placing the ultracrystalline iron core in a heat treatment area of a square furnace to make the axial direction of the ultracrystalline iron core upward, gradually raising the internal temperature of the square furnace to 475 DEG C, and uniformly heating the ultracrystalline iron core; (2) pushing the square furnace into a strong magnetic field to make the square furnace in the center of the strong magnetic field; (3) keeping the internal temperature of the square furnace at 475 to 495 DEG C, and taking the square furnace out of the strong magnetic field after 3 to 4 hours; (4) raising the internal temperature of the square furnace which is taken out of the strong magnetic field to 565 DEG C, and keeping the temperature for 2 to 3 hours; and (5) after the step (4) is finished, naturally reducing the internal temperature of the square furnace to room temperature to finish the strong magnetic annealing process for the ultracrystalline iron core. By adoption of the strong magnetic annealing process for the ultracrystalline iron core, residual magnetism and magnetic conductivity are effectively controlled, linearity is improved, the whole process is simple and convenient, cutting of the ultracrystalline iron core is not required, production cost is reduced, and product yield is improved.

Systems and methods for reading / sensing data stored in magnetoresistive random access memory (MRAM) cells using magnetically annealed reference cells are disclosed. The MRAM includes a reference circuit (570) that includes at least one magnetic storage cell (506), wherein each magnetic storage cell in the MRAM is programmed to the same state. The reference circuit includes a load element coupled to the magnetic memory cell, wherein the load element (512) is configured to establish a reference voltage during a read operation.