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mram sensing using magnetically annealed reference cells

A reference circuit and magnetic storage technology, applied in the fields of magnetic field-controlled resistors, electromagnetic device manufacturing/processing, digital memory information, etc., can solve disadvantages, chip area consumption, high cost, etc.

Active Publication Date: 2016-11-09
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This pre-programming or preparation of reference cells can cause several errors, such as stuck-at faults, which can lead to incorrect sensing of values ​​stored in data cells
Second, design flaws can cause the reference value ref_in to be shifted to a value that is not the ideal case value (which is halfway between "0" and "1"), so that the values ​​used for sensing the values ​​stored in the data cells can be adversely affected The sensing margin of
Third, utilizing two reference cells (one programmed to a "0" and the other to a "1") consumes valuable real estate on the chip, and thus tends to be costly to implement

Method used

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Embodiment Construction

[0026] Several aspects of the invention are disclosed in the following description and related drawings directed to specific embodiments of the invention. Alternative embodiments may be devised without departing from the scope of the present invention. Additionally, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the invention.

[0027] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term embodiment of the invention Not all embodiments of the invention are required to include the discussed feature, advantage or mode of operation.

[0028] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of embodiments of the invention. As...

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Abstract

Systems and methods for reading / sensing data stored in magnetoresistive random access memory (MRAM) cells using magnetically annealed reference cells are disclosed. The MRAM includes a reference circuit (570) that includes at least one magnetic storage cell (506), wherein each magnetic storage cell in the MRAM is programmed to the same state. The reference circuit includes a load element coupled to the magnetic memory cell, wherein the load element (512) is configured to establish a reference voltage during a read operation.

Description

technical field [0001] The disclosed embodiments are directed to reading / sensing magnetoresistive random access memory (MRAM) cells. More particularly, the disclosed embodiments are directed to reading / sensing data stored in an MRAM cell using a magnetically annealed reference MRAM cell. Background technique [0002] Magnetoresistive Random Access Memory (MRAM) is a non-volatile memory technology that has response (read / write) times comparable to volatile memory. In contrast to conventional RAM technology, which stores data as electric charge or current, MRAM uses magnetic elements. Such as Figure 1A and 1B As illustrated in , a magnetic tunnel junction (MTJ) storage element 100 can be formed from two magnetic layers 110 and 130 separated by an insulating (tunnel barrier) layer 120 , each of which can retain a magnetic field. One of the two layers (eg, pinned layer 110 ) is set to a particular polarity. The polarity 132 of another layer (eg, free layer 130 ) is free to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16H01L43/08H10N50/01H10N50/10
CPCG11C7/14G11C13/004G11C11/1659Y10T29/49117G11C11/1673H10N50/01G11C11/16
Inventor 哈里·M·拉奥朱晓春
Owner QUALCOMM INC
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