Method for realizing magnetic domain overturning by adopting piezoelectric shearing mode

A magnetic domain and piezoelectric technology, which is applied in the field of magnetic domain inversion using piezoelectric shearing mode, can solve problems such as difficulty in realizing magnetization inversion, and achieve the effects of simple structure, simple process and low energy consumption.

Active Publication Date: 2020-06-19
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the strain obtained by applying an electric field in a magnetoelectric heterojunction is uniaxial, unless the magnetic film has strong shape anisotropy or unidirectional exchange coupling, it is difficult to achieve magnetization switching greater than 90° using strain.

Method used

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  • Method for realizing magnetic domain overturning by adopting piezoelectric shearing mode
  • Method for realizing magnetic domain overturning by adopting piezoelectric shearing mode
  • Method for realizing magnetic domain overturning by adopting piezoelectric shearing mode

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Embodiment 1

[0040] see figure 1 , figure 2 As shown, the purpose of the present invention is to provide a method of using piezoelectric shear mode to realize magnetic domain switching, including the preparation of magnetoelectric heterojunction and the shear strain induced by electric field and DC bias magnetic field acting together on the magnetoelectric Heterojunction process.

[0041] (1) The preparation process of the magnetoelectric heterojunction, the specific implementation process is:

[0042] A. Clean the commercial piezoelectric single crystal substrate PMN-PT (011) with acetone, alcohol, and deionized water in sequence, and dry the surface with nitrogen.

[0043] B. Fix the cleaned substrate on the tray and place it in the magnetron sputtering chamber, adjust the parameters according to the correct experimental process, and then go through the processes of vacuuming, filling with argon, and bombarding the target with argon ions Process for proper FeCoSiB magnetic film prepa...

Embodiment 2

[0056] A method for realizing magnetic domain inversion by using a piezoelectric shear mode provided by the present invention can also be realized through the following preparation of a magnetoelectric heterojunction and shear strain induced by an electric field.

[0057](1) The preparation process of the magnetoelectric heterojunction, the specific implementation process is:

[0058] A. Clean the commercial piezoelectric single crystal substrate PZN-PT (011) with acetone, alcohol, and deionized water in sequence, and dry the surface with nitrogen.

[0059] B. Fix the cleaned substrate on the tray and place it in the magnetron sputtering chamber, adjust the parameters according to the correct experimental process, and then go through the processes of vacuuming, filling with argon, and bombarding the target with argon ions Procedure for proper CoFeB magnetic film preparation.

[0060] C. Repeat step B to prepare a 20nm copper metal electrode on the other side of the PZN-PT(011...

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Abstract

The invention discloses a method for realizing magnetic domain overturning by adopting a piezoelectric shearing mode. The method comprises the steps of 1 preparing a magnetoelectric heterojunction; and 2 enabling shear strain generated by electric field induction and a direct-current bias magnetic field to jointly act on the magnetoelectric heterojunction. The magneto-electric heterojunction required by the invention is composed of a common commercial rhombohedral phase piezoelectric single crystal substrate and an industrially common magnetic single-layer film, and the structure is simple. Strong shape anisotropy does not need to be introduced through micromachining process, and bias magnetic field does not need to be applied in the preparation process or exchange bias does not need to beintroduced through subsequent magnetic annealing. Magnetization overturning with electric field regulation and control local magnetic domain larger than 90 degrees can be achieved through magnetoelectric effect of shear strain modulation. The process is simple, and energy consumption is low. The method has important significance in developing low-power-consumption magnetic storage and logic devices.

Description

technical field [0001] The invention belongs to the technical field of magnetic domain regulation, and in particular relates to a method for realizing magnetic domain reversal by using a piezoelectric shear mode. Background technique [0002] The domain dynamics of thin films has important implications for potential applications in magnetic memory and logic devices. Using electric field to control magnetic domain is one of the feasible ways to achieve low power consumption and high density storage. Among them, due to the flexibility of material selection, the magnetoelectric coupling effect of strain modulation has received extensive attention among the many avenues for electric field tuning. However, since the strain obtained by applying an electric field in a magnetoelectric heterojunction is uniaxial, unless the magnetic film has strong shape anisotropy or unidirectional exchange coupling, it is difficult to achieve magnetization switching greater than 90° using strain. ...

Claims

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Application Information

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IPC IPC(8): H01L41/06H01L41/08H01L41/083H01L41/09H01L41/12H01L41/253H01L43/02H01L43/08C23C14/35
CPCC23C14/35H10N35/80H10N30/208H10N35/101H10N30/50H10N30/04H10N50/80H10N50/10H10N30/704
Inventor 刘明胡忠强周子尧王志广吴金根赵星儿
Owner XI AN JIAOTONG UNIV
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