The invention discloses a MoS2 thin film containing a 1T phase and a preparation process of the MoS2 thin film. According to the preparation process, ethyl alcohol is used for cleaning the surface ofa substrate, an air blower is used for drying the substrate, the substrate is placed in a magnetron sputtering cavity, a metal-doped MoS2 layer is deposited on the substrate through co-sputtering of aMoS2 target and a metal target, and MoS2 phase change can be regulated and controlled through process control to obtain the MoS2 thin film containing the 1T phase. The thin film prepared by the preparation process has excellent electrical conductivity, catalytic activity and charge storage capacity, can be used in the fields of electrochemical energy conversion and storage, battery electrode materials, super-capacitors, gas sensors and the like and has wide market prospects, the preparation process is simple and easy to operate, and the deposition rate is high.