The invention discloses a double-polysilicon planar SOI
BiCMOS integrated device and a preparation method. The preparation method growing N-Si on a
SOI substrate as the collector region of a bipolar device,
etching a base region by
lithography, growing P-SiGe, i-Si and i-Poly-Si on the base region, preparing
deep trench isolation, and preparing an emitter, a base and a collector to obtain a SiGe HBT (
heterojunction bipolar
transistor) device;
etching a trench on the active region of an NMOS (n-channel
metal oxide semiconductor) device by
lithography, and growing four material
layers in the trench;
etching a trench on the active region of a PMOS (p-channel
metal oxide semiconductor) device, growing three material
layers in the trench, and preparing a drain and a gate on the active region of MOS (
metal oxide semiconductor) to obtain an MOS device; and etching leads by
lithography to obtain the double-polysilicon planar SOI
BiCMOS integrated device and circuit. According to the invention, the double-polysilicon planar SOI
BiCMOS integrated circuit prepared by the method is enhanced in performance by fully utilizing the characteristics that the
electron mobility of a tensile strained Si material is higher than that of a bulk Si material and that the hole mobility of a compressive strained SiGe material is higher than that of the bulk Si material.