Method of manufacturing semiconductor device

Abstract

A method of manufacturing a high-speed operable and broadband operable semiconductor device where a light-receiving element section, a CMOS element and a bipolar transistor element having a double polysilicon structure are formed on one chip. By performing the same conductivity type ion implantation, the same conductivity type diffusion layers (examples thereof include N-type diffusion layers, an anode diffusion layer, P-type well diffusion layer and collector diffusion layer as P-type diffusion layers, a cathode diffusion layer and collector contact diffusion layer as N-type diffusion layers, a source / drain diffusion layer and base Poly-Si diffusion layer as N-type diffusion layers, and a source / drain diffusion layer and base Poly-Si diffusion layer as P-type diffusion layers) are simultaneously formed in two or more regions among a light-receiving element region, CMOS element region and bipolar transistor element region of a semiconductor substrate or of an epitaxial layer over the semiconductor substrate.

Description

Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device in which a light receiving element part, a CMOS element, and a bipolar transistor element are formed on one chip. Background technique [0002] Generally, most light receiving elements are formed as a single element. Therefore, in order to process the received signal, the light receiving element part is used together with the signal processing element part. Alternatively, the light receiving element part and the signal processing semiconductor device are integrated in the same package. Thus, the light receiving element partly functions as a hybrid integrated circuit. [0003] Against this background, a method of forming a light receiving element part and a signal processing element part on one chip has been proposed. According to the above method, miniaturization of the circuit can be achieved. Example...

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Problems solved by technology

[0007] However, the structure of bipolar transistors with a double-layer polysilicon structure is complex

Therefore, the manufacturing process of a circuit integrating a light receiving element portion, a CMOS element, and a bipolar transistor element having a double-layer polysilicon structure is also complicated.

Thus, the manufacturing process requires many steps and a lot of time

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